TZS4689-GS08 [VISHAY]
DIODE ZENER 5.1V 500MW SOD80;
| 型号： | TZS4689-GS08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE ZENER 5.1V 500MW SOD80 |
| 文件： | 总6页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TZS4678 to TZS4717
Vishay Semiconductors
www.vishay.com
Small Signal Zener Diodes
FEATURES
• Zener voltage specified at 50 μA
• Maximum delta VZ given from 10 μA to 100 μA
• Very high stability
• Low noise
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
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DESIGN SUPPORT TOOLS
• Voltage stabilization
Models
Available
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
1.8 to 43
0.05
UNIT
V
VZ range nom.
Test current IZT
VZ specification
Circuit configuration
mA
Pulse current
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
TZS4678 to TZS4717
TZS4678-GS08 to TZS4717-GS08
2500 (per 7" reel)
12 500/box
PACKAGE
MOLDING COMPOUND MOISTURE SENSITIVITY
PACKAGE NAME
WEIGHT
SOLDERING CONDITIONS
FLAMMABILITY RATING
LEVEL
MSL level 1
(according J-STD-020)
QuadroMELF (SOD-80)
34 mg
UL 94 V-0
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
mW
mA
K/W
°C
Power dissipation
RthJA 300 K/W
Ptot
IZ
500
Ptot/VZ
500
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
On PC board 50 mm x 50 mm x 1.6 mm
RthJA
Tj
175
Tstg
VF
-65 to +175
1.5
°C
IF = 100 mA
V
Rev. 1.9, 22-Feb-18
Document Number: 85613
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE RANGE
TEST CURRENT
REVERSE CURRENT (3) VOLTAGE CHANGE (4)
(2)
VZ at IZT1
V
NOM. (1)
1.8
2
IZT1
IZT2
IR at VR
VZ
V
PART
NUMBER
mA
μA
MAX.
7.5
5
V
MIN.
MAX.
MAX.
0.7
TZS4678
TZS4679
TZS4680
TZS4681
TZS4682
TZS4683
TZS4684
TZS4685
TZS4686
TZS4687
TZS4688
TZS4689
TZS4690
TZS4691
TZS4692
TZS4693
TZS4694
TZS4695
TZS4696
TZS4697
TZS4698
TZS4699
TZS4700
TZS4701
TZS4702
TZS4703
TZS4704
TZS4705
TZS4706
TZS4707
TZS4708
TZS4709
TZS4710
TZS4711
TZS4712
TZS4713
TZS4714
TZS4715
TZS4716
TZS4717
1.71
1.9
1.89
2.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
120
1
1
110
100
95
0.7
2.09
2.2
2.4
2.7
3
2.31
4
1
0.75
0.8
2.28
2.52
2
1
2.565
2.85
2.835
3.15
90
1
1
0.85
0.9
85
0.8
7.5
7.5
5
1
3.135
3.42
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
3.465
3.78
80
1.5
2
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.9
75
3.705
4.085
4.465
4.845
5.32
4.095
4.515
4.935
5.355
5.88
70
2
65
4
2
60
10
3
55
10
3
50
10
4
5.89
6.51
45
10
5
6.46
7.14
35
10
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
7.125
7.79
7.875
8.61
31.8
29
10
0.75
0.5
1
8.265
8.645
9.5
9.135
9.555
10.5
27.4
26.2
24.8
21.6
20.4
19
1
0.1
1
0.08
0.1
1
10.45
11.4
11
11.55
12.6
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
12
12.35
13.3
13
13.65
14.7
14
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
14.25
15.2
15
15.75
16.8
16
16.15
17.1
17
17.85
18.9
18
18.05
19
19
19.95
21
20
20.9
22
23.1
0.22
0.24
0.25
0.27
0.28
0.3
22.8
24
25.2
23.75
25.65
26.6
25
26.25
28.35
29.4
27
20.4
21.2
22.8
25
28
28.5
30
31.5
31.35
34.2
33
34.65
37.8
0.33
0.36
0.39
0.43
36
27.3
29.6
32.6
37.05
40.85
39
40.95
45.15
43
Notes
(1)
(2)
(3)
(4)
Tolerancing and voltage designation (VZ). The type numbers shown have a standard tolerance of 5 ꢀ on the nominal zener voltage.
Maximum Zener current ratings (IZM). Maximum Zener current ratings are based on maximum Zener voltage of the individual units
Reverse leakage current (IR). Reverse leakage currents are guaranteed and measured at VR as shown on the table.
Maximum voltage change (VZ). Voltage change is equal to the difference between VZ at 100 μA and VZ at 10 μA.
Rev. 1.9, 22-Feb-18
Document Number: 85613
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
15
600
500
400
300
200
10
5
IZ = 5 mA
0
100
0
- 5
200
Tamb - Ambient Temperature (°C)
0
80
120
160
0
10
20
30
40
50
40
95 9602
95 9600
VZ - Z-Voltage (V)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage
1000
200
150
100
VR = 2 V
Tj = 25 °C
100
IZ = 5 mA
10
50
0
1
25
25
0
10
15
20
5
0
10
15
20
5
95 9598
95 9601
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Fig. 5 - Diode Capacitance vs. Z-Voltage
1.3
100
10
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
Tj = 25 °C
6 x 10-4/K
1
1.1
4 x 10-4/K
2 x 10-4/K
0.1
0.01
0
1.0
0.9
- 2 x 10-4/K
- 4 x 10-4/K
0.001
0.8
1.0
240
0
0.2
0.4
0.6
0.8
0
- 60
60
120
180
95 9599
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
959605
Fig. 3 - Typical Change of Working Voltage vs.
Fig. 6 - Forward Current vs. Forward Voltage
Junction Temperature
Rev. 1.9, 22-Feb-18
Document Number: 85613
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
Vishay Semiconductors
www.vishay.com
50
100
80
Ptot = 500 mW
Tamb = 25 °C
40
30
20
10
Ptot = 500 mW
Tamb = 25 °C
60
40
20
0
0
35
12
20
15
20
25
30
0
4
6
8
VZ - Z-Voltage (V)
95 9607
95 9604
VZ - Z-Voltage (V)
Fig. 7 - Z-Current vs. Z-Voltage
Fig. 8 - Z-Current vs. Z-Voltage
1000
100
10
IZ = 1 mA
5 mA
10 mA
Tj = 25 °C
1
25
0
5
10
15
20
95 9606
VZ - Z-Voltage (V)
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
1000
100
10
tp/T = 0.5
tp/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tj max. - Tamb
tp/T = 0.01
tp/T = 0.1
tp/T = 0.02
tp/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp
102
)
1/2)/(2rzj)
1
10-1
100
101
95 9603
tp - Pulse Length (ms)
Fig. 10 - Thermal Response
Rev. 1.9, 22-Feb-18
Document Number: 85613
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.049) min.
2.5 (0.098) max.
5 (0.197) ref.
96 12071
Rev. 1.9, 22-Feb-18
Document Number: 85613
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
Document Number: 91000
1
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