TZX11B-TAP [VISHAY]
Zener Diode, 10.9V V(Z), 1.8%, 0.5W,;
| 型号： | TZX11B-TAP |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 10.9V V(Z), 1.8%, 0.5W, 测试 二极管 |
| 文件： | 总8页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TZX...
Vishay Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
Applications
94 9367
Voltage stabilization
Order Instruction
Type
TZX2V4A
Ordering Code
TZX2V4A–TAP
Remarks
Ammopack
Absolute Maximum Ratings
T = 25_C
j
Parameter
Test Conditions
Type
Symbol
Value
500
Unit
mW
mA
°C
Power dissipation
Z–current
l=4 mm, T =25 °C
P
L
V
I
P /V
V
Z
Z
Junction temperature
Storage temperature range
T
175
j
T
stg
–65...+175
°C
Maximum Thermal Resistance
T = 25_C
j
Parameter
Test Conditions
Symbol
Value
300
Unit
K/W
Junction ambient
l=4 mm, T =constant
R
thJA
L
Electrical Characteristics
T = 25_C
j
Parameter
Test Conditions
I =200mA
Type
Symbol Min Typ Max Unit
1.5
Forward voltage
V
V
F
F
Document Number 85614
Rev. A6, 08-Aug-02
www.vishay.com
1 (8)
TZX...
Vishay Semiconductors
V
Zmax
.
2)
2)
V
V
V
r
at I
I
at V
I
at V
R
Zmin.
Zmin.
Zmax.
Zmax.
Z
Rmax.
R
Rmax
Type
Type
(V)
2.3
(V)
(V)
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
(V)
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
(W)
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
40
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
(mA)
50
50
10
10
10
6
(V)
TZX2V4A
TZX2V4B
TZX2V7A
TZX2V7B
TZX2V7C
TZX3V0A
TZX3V0B
TZX3V0C
TZX3V3A
TZX3V3B
TZX3V3C
TZX3V6A
TZX3V6B
TZX3V6C
TZX3V9A
TZX3V9B
TZX3V9C
TZX4V3A
TZX4V3B
TZX4V3C
TZX4V3D
TZX4V7A
TZX4V7B
TZX4V7C
TZX4V7D
TZX5V1A
TZX5V1B
TZX5V1C
TZX5V1D
TZX5V6A
TZX5V6B
TZX5V6C
TZX5V6D
TZX5V6E
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
TZX2V4
TZX2V7
2.6
2.5
2.8
3.1
3.4
3.7
2.9
6
TZX3V0
TZX3V3
TZX3V6
TZX3V9
3.2
3.5
3.8
4.1
6
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1.5
1.5
1.5
1.5
2
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
TZX4V3
TZX4V7
TZX5V1
4.0
4.4
4.8
4.5
4.9
5.3
2
2
2
2
2
2
2
2
40
2
40
2
TZX5V6
5.2
5.9
40
2
40
2
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2 (8)
Document Number 85614
Rev. A6, 08-Aug-02
TZX...
Vishay Semiconductors
V
Zmax
.
2)
2)
V
V
V
r
at I
I
at V
I
at V
R
Zmin.
Zmin.
Zmax.
Zmax.
Z
Rmax.
R
Rmax
.
Type
Type
(V)
(V)
(V)
5.7
(V)
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
(W)
15
15
15
15
15
15
15
15
15
15
15
15
15
20
20
20
20
20
20
20
20
20
25
25
25
25
25
25
25
25
35
35
35
35
35
35
35
35
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(V)
3
(mA)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
–
(V)
TZX6V2A
TZX6V2B
TZX6V2C
TZX6V2D
TZX6V2E
TZX6V8A
TZX6V8B
TZX6V8C
TZX6V8D
TZX7V5A
TZX7V5B
TZX7V5C
TZX7V5D
TZX8V2A
TZX8V2B
TZX8V2C
TZX8V2D
TZX9V1A
TZX9V1B
TZX9V1C
TZX9V1D
TZX9V1E
TZX10A
2.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
3.0
3.5
3.5
3.5
3.5
4.0
4.0
4.0
4.0
–
5.8
3
6.0
3
TZX6V2
5.7
6.6
6.1
3
6.3
3
6.4
3.5
3.5
3.5
3.5
5.0
5.0
5.0
5.0
6.2
6.2
6.2
6.2
6.8
6.8
6.8
6.8
6.8
7.5
7.5
7.5
7.5
8.2
8.2
8.2
8.2
9.5
9.5
9.5
9.5
9.5
10
6.6
TZX6V8
TZX7V5
TZX8V2
6.4
7.0
7.7
7.2
7.9
8.7
6.7
6.9
7.0
7.2
7.3
7.5
7.7
7.9
8.1
8.3
8.5
8.7
–
–
8.9
–
–
TZX9V1
8.5
9.7
9.1
–
–
9.3
–
–
9.5
–
–
TZX10B
9.7
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
–
–
TZX10
TZX11
9.5
10.6
11.6
TZX10C
TZX10D
TZX11A
9.9
–
–
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
–
–
–
–
TZX11B
–
–
10.4
TZX11C
–
–
TZX11D
–
–
TZX12A
–
–
TZX12B
–
–
TZX12C
TZX12D
TZX12X
–
–
TZX12
TZX13
11.4
12.4
12.7
13.4
–
–
11.44 12.03
–
–
TZX13A
12.4
12.6
12.9
12.9
13.1
13.4
–
–
TZX13B
10
–
–
TZX13C
10
–
–
Document Number 85614
Rev. A6, 08-Aug-02
www.vishay.com
3 (8)
TZX...
Vishay Semiconductors
V
Zmax
.
2)
2)
V
V
V
r
at I
I
at V
I
at V
R
Zmin.
Zmin.
Zmax.
Zmax.
Z
Rmax.
R
Rmax
.
Type
Type
(V)
(V)
(V)
(V)
(W)
35
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(V)
11
(mA)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V)
TZX14A
TZX14B
TZX14C
TZX15A
TZX15B
TZX15C
TZX15X
TZX16A
TZX16B
TZX16C
TZX18A
TZX18B
TZX18C
TZX20A
TZX20B
TZX20C
TZX22A
TZX22B
TZX22C
TZX24A
TZX24B
TZX24C
TZX24X
TZX27A
TZX27B
TZX27C
TZX27X
TZX30A
TZX30B
TZX30C
TZX30X
TZX33A
TZX33B
TZX33C
TZX36A
TZX36B
TZX36C
TZX36X
13.2
13.5
13.8
14.1
14.5
14.9
13.7
14.0
14.3
14.7
15.1
15.5
–
35
11
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
TZX14
13.2
14.3
15.5
35
11
40
11.5
11.5
11.5
11.5
12
12
12
13
13
13
15
15
15
17
17
17
19
19
19
19
21
21
21
21
23
23
23
23
25
25
25
27
27
27
27
40
TZX15
14.1
40
14.35 15.09
40
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
15.9
16.5
17.1
17.7
18.3
19.0
19.7
20.4
21.2
21.9
22.6
23.3
24.0
24.7
25.5
45
45
TZX16
TZX18
TZX20
TZX22
15.3
16.9
18.8
20.9
17.1
19.0
21.2
23.3
45
55
55
55
60
60
60
65
65
65
70
70
TZX24
TZX27
22.9
25.2
25.5
28.6
70
22.61 23.77
70
25.2
26.2
27.2
26.6
27.6
28.6
80
80
80
26.99 28.39
80
28.2
29.2
30.2
29.6
30.6
31.6
100
100
100
100
120
120
120
140
140
140
140
TZX30
TZX33
TZX36
28.2
31.2
34.2
31.6
34.5
38.0
29.02 30.51
31.2
32.2
33.2
34.2
35.3
36.4
32.6
33.6
34.5
35.7
36.8
38.0
35.36 37.19
2) Additional measurement
Please note: Additional measurement of voltage group 9V1 to 36 I at 95 % V
= < 35 nA at T 25 _C
R
Zmin
j
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4 (8)
Document Number 85614
Rev. A6, 08-Aug-02
TZX...
Vishay Semiconductors
Characteristics (Tj = 25_C unless otherwise specified)
500
400
300
1.3
1.2
1.1
V
Ztn
=V /V (25°C)
Zt Z
–4
TK =10 10 /K
VZ
–4
8 10 /K
–4
6 10 /K
–4
4 10 /K
–4
l
l
2 10 /K
0
200
100
0
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
T =constant
L
20
240
0
5
10
15
–60
0
60
120
180
l – Lead Length ( mm )
T – Junction Temperature ( °C )
j
95 9611
95 9599
Figure 1. Thermal Resistance vs. Lead Length
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
600
500
15
10
400
300
200
100
5
I =5mA
Z
0
0
–5
200
50
0
40
80
120
160
0
10
20
30
40
T
amb
– Ambient Temperature ( °C )
95 9602
V – Z-Voltage ( V )
Z
95 9600
Figure 2. Total Power Dissipation vs.
Ambient Temperature
Figure 5. Temperature Coefficient of Vz vs. Z–Voltage
1000
200
T =25°C
j
150
100
10
1
V =2V
R
T =25°C
j
100
I =5mA
Z
50
0
25
0
5
10
15
20
25
0
5
10
15
20
V – Z-Voltage ( V )
Z
95 9598
V – Z-Voltage ( V )
Z
95 9601
Figure 3. Typical Change of Working Voltage under
Figure 6. Diode Capacitance vs. Z–Voltage
Operating Conditions at T =25°C
amb
Document Number 85614
Rev. A6, 08-Aug-02
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5 (8)
TZX...
Vishay Semiconductors
100
10
50
40
30
P
T
=500mW
tot
=25°C
amb
T =25°C
j
1
0.1
0.01
20
10
0
0.001
1.0
35
0
0.2
0.4
0.6
0.8
15
20
25
30
V – Forward Voltage ( V )
F
V – Z-Voltage ( V )
Z
95 9605
95 9607
Figure 7. Forward Current vs. Forward Voltage
Figure 9. Z–Current vs. Z–Voltage
1000
100
10
100
80
I =1mA
Z
P
T
=500mW
tot
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
25
0
5
10
15
20
20
0
4
8
12
16
V – Z-Voltage ( V )
Z
95 9606
V – Z-Voltage ( V )
Z
95 9604
Figure 8. Z–Current vs. Z–Voltage
Figure 10. Differential Z–Resistance vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
DT=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r ꢀDT/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 11. Thermal Response
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6 (8)
Document Number 85614
Rev. A6, 08-Aug-02
TZX...
Vishay Semiconductors
Dimensions in mm
Cathode Identification
0.55 max.
technical drawings
according to DIN
specifications
1.7 max.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 min.
3.9 max.
26 min.
Weight max. 0.3g
Document Number 85614
Rev. A6, 08-Aug-02
www.vishay.com
7 (8)
TZX...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8 (8)
Document Number 85614
Rev. A6, 08-Aug-02
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