U20BCT [VISHAY]
Dual Common-Cathode Ultrafast Plastic Rectifier; 双共阴极超快整流器塑料型号: | U20BCT |
厂家: | VISHAY |
描述: | Dual Common-Cathode Ultrafast Plastic Rectifier |
文件: | 总5页 (文件大小:161K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
U(B)20BCT thru U(B)20DCT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
• Oxide planar chip junction
TO-263AB
TO-220AB
• Ultrafast recovery time
K
• Soft recovery characteristics
• Low switching losses, high efficiency
2
• High forward surge capability
1
3
• Meets MSL level 1, per J-STD-020, LF maximum
2
peak of 245 °C (for TO-263AB package)
1
UB20xCT
U20xCT
PIN 1
• Solder dip 260 °C, 40 s (for TO-220AB package)
PIN 1
K
PIN 2
CASE
PIN 2
HEATSINK
PIN 3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection specifically
for DCM application.
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
100 V, 150 V, 200 V
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
IFSM
100 A
26 ns
trr
VF at IF = 10 A
TJ max.
0.834 V
150 °C
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
U(B)20BCT
U(B)20CCT
U(B)20DCT
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
total device
per diode
20
10
Max. average forward rectified current (Fig. 1)
IF(AV)
A
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
100
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 kΩ (contact mode)
VC
8
kV
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Document Number: 89017
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
U(B)20BCT thru U(B)20DCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5.0 A
IF = 10 A
0.854
0.931
-
TJ = 25 °C
1.00
Instantaneous forward voltage per diode (1)
VF
V
IF = 5.0 A
IF = 10 A
0.760
0.834
-
TJ = 100 °C
0.91
TJ = 25 °C
TJ = 100 °C
1.2
120
15
500
Reverse current per diode (2)
rated VR
IR
µA
Reverse recovery time per diode
Reverse recovery time per diode
Stored charge per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
trr
26
73
35
80
-
ns
ns
nC
ns
V
IF = 10 A, dIdt = 20 A/µs,
V
R = 200 V, Irr = 0.1 IRM
Qrr
tfr
30
Forward recovery time per diode
Peak forward voltage per diode
160
2.6
-
IF = 10 A, dI/dt = 80 A/µs,
VF = 1.1 x VF max.
VFP
-
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
U20xCT
UB20xCT
UNIT
Typical thermal resistance per diode
RθJC
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
U20DCT-E3/4W
1.87
1.37
1.37
4W
4W
8W
UB20DCT-E3/4W
UB20DCT-E3/8W
50/tube
Tube
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
24
12
10
8
D = 0.5
D = 0.8
D = 0.3
D = 0.2
Resistive or Inductive Load
20
16
12
8
D = 0.1
UB20xCT
D = 1.0
U20xCT
6
4
T
2
4
D = tp/T
tp
0
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89017
Revision: 13-May-08
New Product
U(B)20BCT thru U(B)20DCT
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
T
J = 50 °C
0.01
10
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
1000
100
TJ = 125 °C
100
TJ = 100 °C
1
TJ = 75 °C
10
TJ = 50 °C
1
0.1
10
20
30
40
50
60
70
80
90 100
10
0.001
0.01
0.1
1
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89017
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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New Product
U(B)20BCT thru U(B)20DCT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.15 (3.81) MIN.
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89017
Revision: 13-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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