U290 [VISHAY]
N-Channel JFETs;
| 型号： | U290 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel JFETs |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U290/291
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (ꢀ ) ID(off) Typ (pA)
tON Typ (ns)
U290
U291
−4.0 to −10
−1.5 to −4.5
3
7
10
10
14
14
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: U290 < 3
D Fast Switching—tON: 14 ns
D High Off-Isolation
ꢀ
D Low Error Voltage
D Analog Switches
D Choppers
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Low Capacitance: 20 pF
D Low Insertion Loss
D Eliminates Additional Buffering
DESCRIPTION
The U290/U291 are high-performance JFET analog switches
designed to offer low on-resistance and fast switching. This
series features the lowest on-resistance of any JFET in the
industry today.
For similar products in TO-226A (TO-92) packaging, see the
J105/106/107 data sheet.
TheTO-206AC (TO-52) hermetically sealed case makes this
series suitable for military applications.
TO-206AC
(TO-52)
S
1
2
Ordering Information: U290—E3
U291—E3
3
D
G and Case
Top View
U290
U291
ABSOLUTE MAXIMUM RATINGS
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 4 mW/_C above 25_C
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
1
U290/291
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
U290
U291
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= −1 ꢁA , V = 0 V
−35
−30
−4.0
500
−30
−1.5
200
(BR)GSS
G
DS
V
V
V
= 15 V, I = 3 nA
−10
−4.5
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 10 V, V = 0 V
mA
nA
ꢁA
DSS
DS
GS
V
= −15 V, V = 0 V
−0.02
−0.01
−0.01
0.01
−1
−1
−1
−1
GS
DS
Gate Reverse Current
I
GSS
T
= 125_C
A
b
Gate Operating Current
I
G
V
V
= 10 V, I = 25 mA
D
DG
nA
= 5 V, V = −10 V
1
1
3
1
1
7
DS
GS
Drain Cutoff Current
I
D(off)
T
= 125_C
−0.005
ꢁA
ꢀ
A
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
V
= 0 V, I = 1 mA
GS D
DS(on)
V
I
= 1 mA , V = 0 V
0.7
V
GS(F)
G
DS
Dynamic
b
Common-Source Forward Transconductance
g
55
5
fs
V
= 10 V, I = 25 mA, f = 1 kHz
mS
DS
D
b
Common-Source Output Conductance
g
os
Drain-Source On-Resistance
r
V
= 0 V, I = 1 mA, f = 1 kHz
3
7
ꢀ
ds(on)
GS
D
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
C
V
= 0 V, V = 0 V, f = 1 MHz
120
20
3
160
30
160
30
iss
DS
GS
pF
C
rss
V
= 0 V, V = −15 V, f = 1 MHz
DS GS
e
V
= 10 V, I = 25 mA, f = 1 kHz
nV⁄√Hz
n
DG
D
Switching
t
6
8
5
9
15
20
15
20
15
20
15
20
d(on)
Turn-On Time
t
r
V
= 1.5 V, V
= 0 V
DD
GS(H)
ns
See Switching Diagram
t
d(off)
Turn-Off Time
Notes
t
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NVA
b. Pulse test: PW v300 ꢁs duty cycle v3%.
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
20
2 .0
10
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 10 V, VGS = 0 V
T
A
= 25_C
16
12
8
8
6
4
2
0
1.6
1.2
0.8
0.4
VGS(off) = −3 V
rDS
IDSS
−5 V
4
0
−8 V
0
0
−2
−4
−6
−8
−10
10
100
1000
V
GS(off) − Gate-Source Cutoff Voltage (V)
ID − Drain Current (mA)
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
2
U290/291
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance vs. Temperature
Output Characteristics
10
500
ID = 10 mA
DS changes X 0.7%/_C
VGS(off) = −5 V
V
= 0 V
GS
r
400
300
8
6
4
2
0
−0.5 V
−1.0 V
VGS(off) = −3 V
−1.5 V
−2.0 V
−5 V
200
−8 V
−2.5 V
−3.0 V
100
0
−55 −35 −15
5
25
45
65
85 105 125
2
4
6
8
10
T
A
− Temperature (_C)
V
DS − Drain-Source Voltage (V)
Turn-On Switching
Turn-Off Switching
20
t
independent of device VGS(off)
d(off)
t approximately independent of ID
r
VDD = 1.5 V, VGS(L) = −10 V
VDD = 1.5 V, RG = 50
ꢀ
VGS(L) = −10 V
16
12
t
r
t
@ ID = 30 mA
t
d(off)
d(on)
8
4
0
8
4
0
t
f
VGS(off) = −3 V
t
@ ID = 10 mA
VGS(off) = −8 V
d(on)
0
−2
−4
−6
−8
−10
0
10
20
30
40
50
V
GS(off) − Gate-Source Cutoff Voltage (V)
ID − Drain Current (mA)
Capacitance vs. Gate-Source Voltage
Transconductance vs. Drain Current
150
200
100
V
= −5 V
V
= 10 V
DS
GS(off)
VDS = 0 V
f = 1 MHz
f = 1 kHz
120
90
60
30
0
T
A
= −55_C
25_C
C
iss
10
125_C
C
rss
1
0
−4
−8
−12
−16
−20
1
10
I − Drain Current (mA)
D
100
V
GS − Gate-Source Voltage (V)
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
3
U290/291
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Output Conductance vs. Drain Current
Noise Voltage vs. Frequency
20
10
100
10
1
VGS(off) = −5 V
VDS = 10 V
f = 1 kHz
VDG = 10 V
T
A
= −55_C
25_C
ID = 10 mA
1
125_C
0.1
1
10
D − Drain Current (mA)
100
10
100
1 k
f − Frequency (Hz)
10 k
100 k
I
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
300
30
100 nA
10 nA
T
= 125_C
A
g
and g @ VDS = 10 V
os
GS
fs
V
= 0 V, f = 1 kHz
100 mA
260
220
24
IGSS @ 125_C
25 mA
1 nA
g
fs
18
12
100 mA
g
os
100 pA
25 mA
T
A
= 25_C
180
140
100
IGSS @ 25_C
10 pA
1 pA
6
0
0
−2
−4
−6
−8
−10
0
4
8
12
16
20
V
GS(off) − Gate-Source Cutoff Voltage (V)
VDG − Drain-Gate Voltage (V)
VDD
RL
SWITCHING TIME TEST CIRCUIT
OUT
U290
U291
V
GS(H)
V
−12 V
−7 V
GS(L)
*
R
50
ꢀ
50 ꢀ
L
VGS(L)
ID(on)
28 mA
27 mA
1 k
ꢀ
ꢀ
51 ꢀ
* Non-Inductive
VIN
Scope
Input Pulse
Sampling Scope
51
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
ꢀ
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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