UG10FCTHE3/45 [VISHAY]
DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | UG10FCTHE3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 二极管 |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Soft Recovery Rectifier
FEATURES
ITO-220AB
TO-220AB
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3
3
2
2
1
1
BYT28, UG10 Series
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
BYT28F, UGF10 Series
PIN 1
PIN 2
PIN 1
PIN 2
CASE
PIN 3
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
PIN 3
TO-263AB
K
• AEC-Q101 qualified
(for ITO-220AB and TO-263AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
BYT28B, UGB10 Series
TYPICAL APPLICATIONS
PIN 1
K
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 5.0 A
Case: TO-220AB, ITO-220AB, TO-263AB
VRRM
IFSM
300 V to 400 V
60 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
trr
35 ns
VF at IF
TJ max.
1.05 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Package
meets JESD 201 class 2 whisker test
Polarity: As marked
Diode variations
Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
BYT28-300
UG10FCT
BYT28-400
UG10GCT
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
VRRM
VRWM
VRMS
VDC
300
300
210
300
400
400
280
400
V
V
V
V
Maximum DC blocking voltage
total device
Maximum average forward rectified current at TC = 100 °C
per diode
10
IF(AV)
IFSM
A
A
5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
60
Operating junction and storage temperature range
TJ, TSTG
VAC
-40 to +150
1500
°C
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 15-Nov-17
Document Number: 88552
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
1.30
1.40
1.05
10
UNIT
IF = 5 A
IF = 10 A
IF = 5 A
TJ = 25 °C
Maximum instantaneous
forward voltage per diode
(1)
VF
V
TJ = 150 °C
TJ = 25 °C
TJ = 100 °C
Maximum reverse current
per diode at VRRM
IR
μA
ns
200
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
35
Maximum reverse recovery
time per diode
trr
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
rr = 0.1 IRM
50
3.0
50
I
Maximum reverse recovery
current per diode
IF = 5 A, dI/dt = 50 A/μs, VR = 30 V,
C = 100 °C
IRM
Qrr
A
T
Maximum stored
charge per diode
IF = 2 A, dI/dt = 20 A/μs, VR = 30 V,
Irr = 0.1 IRM
nC
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BYT28
UG10
BYT28F
UGF10
BYT28B
UGB10
PARAMETER
SYMBOL
UNIT
Typical thermal resistance junction to case per diode
RJC
4.5
6.7
4.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
BYT28-400-E3/45
1.80
1.95
1.77
1.77
1.95
1.77
1.77
45
45
45
81
45
45
81
BYT28F-400-E3/45
BYT28B-400-E3/45
BYT28B-400-E3/81
BYT28F-400HE3/45 (1)
BYT28B-400HE3/45 (1)
BYT28B-400HE3/81 (1)
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
50/tube
Tube
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified, available in ITO-220AB and TO-263AB package
Revision: 15-Nov-17
Document Number: 88552
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
15
10
5
1000
100
10
Resistive or Inductive Load
TJ = 125 °C
TJ = 100 °C
1.0
TJ = 25 °C
0.1
0
40
60
80
100
20
0
100
50
150
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
100
120
TC = 105 °C
8.3 ms Single Half Sine-Wave
100
80
60
40
20
0
at 5 A, 50 A/μs
at 2 A, 20 A/μs
10
at 5 A, 50 A/μs
at 1 A, 100 A/μs
trr
Qrr
at 2 A, 20 A/μs
1
25
50
75
100
125
1
10
100
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
100
100
Pulse Width = 300 μs
1 % Duty Cycle
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 100 °C
TJ = 125 °C
1.0
0.1
10
TJ = 25 °C
0.01
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 15-Nov-17
Document Number: 88552
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) max.
0.190 (4.83)
0.170 (4.32)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.076 (1.93) REF.
0.110 (2.79)
0.100 (2.54)
7° REF.
0.113 (2.87)
0.103 (2.62)
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
2
3
1
3
7° REF.
0.160 (4.06)
0.140 (3.56)
0.191 (4.85)
0.171 (4.35)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.028 (0.71)
0.020 (0.51)
0.025 (0.64)
0.015 (0.38)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 15-Nov-17
Document Number: 88552
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
1
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