UGB8BT-E3/31 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3;


型号：	UGB8BT-E3/31
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 功效二极管
文件：	总5页 (文件大小：130K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UG(F,B)8AT thru UG(F,B)8DT

Vishay General Semiconductor

Ultrafast Rectifier

FEATURES

TO-220AC

ITO-220AC

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020C, LF max peak

of 245 °C (for TO-263AB package)

UG8xT

UGF8xT

• Solder Dip 260 °C, 40 seconds (for TO-220AC &

ITO-220AC package)

PIN 1

CASE

PIN 2

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-263AB

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

UGB8xT

PIN 1

HEATSINK

PIN 2

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: As marked

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

t_rr

8.0 A

50 V to 200 V

150 A

20 ns

V_F

0.95 V

T_jmax.

150 °C

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RMS

V_DC

UG8AT

UG8BT

100

UG8CT

150

UG8DT

200

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

105

140

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 100 °C

100

150

200

I_F(AV)

8.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

T_J, T_STG

V_AC

150

°C

Operating junction and storage temperature range

- 55 to + 150

1500

Isolation voltage (ITO-220AC only)

From terminals to heatsink t = 1 minute

Document Number 88765

27-Jun-06

www.vishay.com

UG(F,B)8AT thru UG(F,B)8DT

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL UG8AT

UG8BT

UG8CT

UG8DT

UNIT

at 8.0 A

20.0 A

5.0 A

1.0

1.2

0.95

Maximum instantaneous

forward voltage ⁽¹⁾

V_F

T_j= 150 °C

Maximum DC reverse current at

rated DC blocking voltage

T_j= 25 °C

T_j= 100 °C

300

I_R

t_rr

µA

Maximum reverse recovery time

at I_F= 0.5 A, I_R= 1.0 A, I_rr= 0.25 A

at I_F= 8.0 A, V_R= 30 V,

T_j= 25 °C

Maximum reverse recovery time

di/dt = 50 A/µs,

T_j= 100 °C

t_rr

I_rr= 10 % I_RM

Maximum recovered stored

charged

at I_F= 8.0 A, V_R= 30 V, T_j= 25 °C

Q_rr

C_J

di/dt = 50 A/µs

T_j= 100 °C

Typical junction capacitance

at 4.0 V, 1 MHz

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

UG8AT

UGF8AT

UGB8AT

UNIT

Typical thermal resistance from junction to case

R_θJC

4.0

5.0

4.0

°C/W

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

ORDERING INFORMATION

PACKAGE

TO-220AC

ITO-220AC

TO-263AB

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/Tube

DELIVERY MODE

Tube

UG8DT-E3/45

1.80

1.95

1.33

UGF8DT-E3/45

UGB8DT-E3/45

UGB8DT-E3/81

50/Tube

Tube

50/Tube

Tube

800/Reel

Tape Reel

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

1000

TC = 100 °C

Resistive or Inductive Load

8.3 ms Single Half Sine-Wave

100

125

150

175

100

Ambient Temperature (°C)

Number of Cycles at 60 Hz

Figure 1. Maximum Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88765

27-Jun-06

UG(F,B)8AT thru UG(F,B)8DT

Vishay General Semiconductor

100

di/dt = 150 A/µs

I_F= 4.0 A

di/dt = 100 A/µs

20 A/µs

V_R= 30 V

50 A/µs

100 A/µs

50 A/µs

Tj = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

150 A/µs

20 A/µs

0.1

0.01

trr

Qrr

100

125

150

175

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Junction Temperature (°C)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Charateristics

Figure 5. Reverse Switching Characteristics

1000

100

= 25 °C

f = 1.0 MHz

sig = 50 mVp-p

T^j= 125 °C

100

Tj = 100 °C

T^j= 25 °C

0.1

0.01

100

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Reverse Voltage (V)

Figure 4. Typical Reverse Charateristics

Figure 6. Typical Junction Capacitance

Document Number 88765

27-Jun-06

www.vishay.com

UG(F,B)8AT thru UG(F,B)8DT

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

ITO-220AC

See note

TO-220AC

0.190 (4.83)

0.170 (4.32)

See note

0.404 (10.26)

0.384 (9.75)

0.076 Ref.

(1.93) ref.

0.415(10.54)MAX.

0.154(3.91)

0.185(4.70)

0.110 (2.79)

0.100 (2.54)

DIA.

0.370(9.40)

0.360(9.14)

0.148(3.74)

0.175(4.44)

0.055(1.39)

0.045(1.14)

7° Ref.

0.076 Ref.

0.113(2.87)

0.103(2.62)

(1.93) Ref.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

45° Ref.

0.145(3.68)

0.135(3.43)

0.600 (15.24)

0.580 (14.73)

0.671 (17.04)

0.651 (16.54)

7° Ref.

0.603(15.32)

0.573(14.55)

0.350 (8.89)

0.330 (8.38)

0.350(8.89)

0.330(8.38)

0.635(16.13)

0.625(15.87)

Copper exposure

0.010 (0.25) Max.

7° Ref.

1.148(29.16)

1.118(28.40)

0.191 (4.85)

0.171 (4.35)

0.160(4.06)

0.140(3.56)

0.110(2.79)

0.100(2.54)

0.110 (2.79)

0.100 (2.54)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.057(1.45)

0.560(14.22)

0.530(13.46)

PIN 1

PIN 2

0.045(1.14)

CASE

0.105(2.67)

0.095(2.41)

0.035 (0.89)

0.025 (0.64)

0.037(0.94)

0.027(0.68)

0.025 (0.64)

0.015 (0.38)

0.028 (0.71)

0.020 (0.51)

0.022(0.56)

0.014(0.36)

0.205 (5.21)

0.195 (4.95)

0.205(5.20)

0.195(4.95)

Note: Copper exposure is allowable for 0.005 (0.13) Max. from the body

TO-263AB

0.41 (10.45)

0.380 (9.65)

0.190 (4.83)

0.160 (4.06)

Mounting Pad Layout

0.055 (1.40)

0.045 (1.14)

0.42

MIN.

0.245 (6.22)

MIN

(10.66)

0.33

(8.38)

0.055 (1.40)

0.047 (1.19)

MIN.

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.591(15.00)

0.670 (17.02)

0.591 (15.00)

0-0.01 (0-0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15

(3.81)

0.037 (0.940)

0.027 (0.686)

MIN.

0.08

MIN.

0.140 (3.56)

0.110 (2.79)

0.105 (2.67)

0.095 (2.41)

(2.032)

0.205 (5.20)

0.195 (4.95)

0.105 (2.67)

(0.095) (2.41)

www.vishay.com

Document Number 88765

27-Jun-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

相关型号：

UGB8BT-E3/45

DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode