V20D170C-M3/I [VISHAY]
Rectifier Diode,;
| 型号： | V20D170C-M3/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 功效 瞄准线 测试 二极管 |
| 文件： | 总5页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V20D170C
Vishay General Semiconductor
www.vishay.com
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
®
eSMP Series
Available
• Very low profile - typical height of 1.7 mm
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
1
• AEC-Q101 qualified available
2
Top View
Bottom View
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SMPD (TO-263AC)
TYPICAL APPLICATIONS
Anode 1
Anode 2
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
Cathodde
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 10.0 A
170 V
VRRM
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
IFSM
VF at IF = 10.0 A (TA = 125 °C)
TJ max.
150 A
-
halogen-free, RoHS-compliant, and
0.68 V
175 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Package
SMPD (TO-263AC)
Common cathode
Circuit configurations
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20D170C
V20D170C
170
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
V
A
per device
per diode
20
Maximum average forward rectified current
(fig. 1)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
(1)
Operating junction temperature range
Storage temperature range
TJ
-40 to +175
-55 to +175
°C
°C
TSTG
Note
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
Revision: 08-Jan-2019
Document Number: 87451
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20D170C
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.75
0.83
0.6
MAX.
UNIT
IF = 5 A
-
TA = 25 °C
IF = 10 A
IF = 5 A
0.9
(1)
Instantaneous forward voltage per diode
VF
V
-
TA = 125 °C
IF = 10 A
0.68
0.001
0.8
0.76
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
-
mA
mA
mA
mA
pF
V
R = 140 V
-
0.15
5
(2)
Reverse current at rated VR per diode
Typical junction capacitance
IR
-
VR = 170 V
1.5
4.0 V, 1 MHz
CJ
520
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20D170C
UNIT
(1)
RJC
1.5
58
Typical thermal resistance per device
°C/W
(2)(3)
RJA
Notes
(1)
Mounted on infinite heatsink
(2)
(3)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA - junction-to-mount
Free air, without heatsink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
2000/reel
DELIVERY MODE
V20D170C-M3/I
V20D170CHM3/I (1)
0.55
0.55
I
I
13" diameter plastic tape and reel
13" diameter plastic tape and reel
2000/reel
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
25
20
15
10
5
10000
1000
100
10
8
10000
D = 0.8
RthJC = 1.5 °C/W
D = 0.5
D = 0.3
1000
100
10
6
D = 1.0
D = 0.2
D = 0.1
4
T
RthJA = 58 °C/W
2
D = tp/T
tp
0
10
0
0
25
50
75
100 125 150 175
0
2
4
6
8
10
12
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 08-Jan-2019
Document Number: 87451
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20D170C
Vishay General Semiconductor
www.vishay.com
Axis Title
Axis Title
100
10
1
10000
1000
100
100
10
1
10000
Junction-to-ambient
TJ = 175 °C
TJ = 150 °C
1000
100
10
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = -40 °C
1.0
0.1
10
0
0.5
1.5
2.0
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Axis Title
Axis Title
100
10
10000
1000
100
60
55
50
45
40
35
30
25
20
10000
Epoxy printed circuit
board FR4 copper
thickness = 70 µm
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
1000
100
10
0.1
TJ = 100 °C
0.01
0.001
0.0001
0.00001
0.000001
TJ = 25 °C
TJ = -40 °C
S (cm2)
10
20
40
60
80
100
1
2
3
4
5
6
7
8
9
Percent of Rated Peak Reverse Voltage (%)
Copper Pad Areas (cm2)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
Axis Title
1000
100
10
10000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1000
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 08-Jan-2019
Document Number: 87451
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20D170C
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPD (TO-263AC)
(10.20)
(9.80)
0.059 (1.50) REF.
0.402
0.386
(1.80)
(1.60)
0.071
0.063
(0.52)
(0.27)
0.020
0.011
(1.21)
(0.81)
0.048
0.032
(8.99)
(8.59)
0.354
0.338
(12.93)
(12.33)
0.509
0.485
0 to 0.01
(0 to 0.254)
(1.74)
(1.34)
(0.52)
(0.27)
(1.23)
(0.72)
0.069
0.053
0.020
0.011
0.052
0.028
(1.60)
(1.20)
0.063
0.047
0.200
(5.08)
NOM.
Mounting Pad Layout
0.420 (10.66) MIN.
(8.60)
(8.20)
0.339
0.323
(7.00)
(6.60)
0.276
0.260
0.330
(8.38)
REF.
0.194
NOM.
(4.93)
(15.33)
0.604
(13.33)
0.525
0.120 (3.05) REF.
(2.67)
(2.41)
0.105
0.095
0.080 (2.03) MIN.
Revision: 08-Jan-2019
Document Number: 87451
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPD, 3/2 PIN
VISHAY
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