V30120C-M3/4W [VISHAY]
DIODE 15 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;型号: | V30120C-M3/4W |
厂家: | VISHAY |
描述: | DIODE 15 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 瞄准线 二极管 |
文件: | 总5页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V30120C, VI30120C
Vishay General Semiconductor
www.vishay.com
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
3
2
2
1
TYPICAL APPLICATIONS
1
VI30120C
V30120C
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 1
PIN 1
PIN 3
PIN 2
K
PIN 2
CASE
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 15 A
Base P/N-M3
commercial grade
- halogen-free, RoHS-compliant, and
VRRM
120 V
150 A
0.68 V
150 °C
IFSM
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 15 A
TJ max.
Polarity: as marked
Package
TO-220AB, TO-262AA
Common cathode
Mounting Torque: 10 in-lbs max.
Diode variation
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VI30120C
UNIT
Max. repetitive peak reverse voltage
VRRM
120
30
V
per device
per diode
Max. average forward rectified current (fig. 1)
IF(AV)
A
A
15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Revision: 09-Nov-17
Document Number: 89160
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120C, VI30120C
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.56
0.71
0.86
0.50
0.60
0.68
11
MAX.
UNIT
IF = 5 A
-
IF = 7.5 A
IF = 15 A
IF = 5 A
TA = 25 °C
-
0.97
-
(1)
Instantaneous forward voltage per diode
VF
V
IF = 7.5 A
IF = 15 A
T
A = 125 °C
-
0.76
-
TA = 25 °C
A = 125 °C
TA = 25 °C
A = 125 °C
μA
mA
μA
VR = 90 V
T
8
-
(2)
Reverse current per diode
IR
-
800
50
VR = 120 V
T
17
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VI30120C
UNIT
Typical thermal resistance per diode
RJC
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-262AA
PREFERRED P/N
V30120C-M3/4W
VI30120C-M3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.89
1.45
4W
4W
Tube
Tube
50/tube
Revision: 09-Nov-17
Document Number: 89160
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120C, VI30120C
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
35
30
25
20
15
10
5
100
10
Resistive or Inductive Load
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
Mounted on Specific Heatsink
0
0.001
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
18
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
D = 0.5
16
14
12
10
8
D = 0.3
D = 0.2
1000
100
10
D = 0.1
D = 1.0
T
6
4
D = tp/T
12
tp
2
0
0
2
4
6
8
10
14
16
18
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Junction to Case
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 09-Nov-17
Document Number: 89160
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120C, VI30120C
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
1
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.920 (23.37)
PIN
2
0.510 (12.95)
0.470 (11.94)
1
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
Revision: 09-Nov-17
Document Number: 89160
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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