V30120S-E3_15 [VISHAY]
High Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | V30120S-E3_15 |
| 厂家： | 
VISHAY |
| 描述： | High Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：726K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
3
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
3
2
2
1
1
V30120S
VF30120S
PIN 1
PIN 3
PIN 1
PIN 2
CASE
PIN 2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PIN 3
TO-263AB
TO-262AA
TYPICAL APPLICATIONS
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
K
A
MECHANICAL DATA
3
NC
VB30120S
2
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
1
VI30120S
TO-262AA
PIN 1
PIN 3
NC
A
K
PIN 2
K
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
HEATSINK
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
30 A
120 V
300 A
0.74 V
150 °C
Polarity: As marked
VRRM
Mounting Torque: 10 in-lbs maximum
IFSM
VF at IF = 30 A
TJ max.
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Package
Diode variation
Single die
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30120S VF30120S VB30120S VI30120S UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
IF(AV)
120
30
V
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C
Voltage rate of change (rated VR)
EAS
IRRM
180
0.5
mJ
A
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 05-Nov-13
Document Number: 88974
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.50
0.70
0.99
0.43
0.60
0.74
18
MAX.
UNIT
IF = 5 A
-
IF = 15 A
IF = 30 A
IF = 5 A
TA = 25 °C
-
1.10
-
VF
(1)
Instantaneous forward voltage per diode
V
IF = 15 A
IF = 30 A
TA = 125 °C
-
0.82
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 90 V
12
-
Reverse current per diode (2)
IR
-
500
35
VR = 120 V
22
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120S
VF30120S
VB30120S
VI30120S
UNIT
Typical thermal resistance per diode
RJC
1.6
4.0
1.6
1.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V30120S-E3/4W
VF30120S-E3/4W
VB30120S-E3/4W
VB30120S-E3/8W
VI30120S-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.88
1.75
1.39
1.39
1.46
4W
4W
4W
8W
4W
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
35
30
25
20
15
10
5
30
25
20
15
10
5
D = 0.8
Resistive or Inductive Load
D = 0.5
V(B,I)30120S
D = 0.3
D = 0.2
VF30120S
D = 1.0
T
D = 0.1
D = tp/T
25
tp
Mounted on Specific Heatsink
0
0
0
5
10
15
20
30
35
0
25
50
75
100
125
150
175
Average Forward Current (A)
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 05-Nov-13
Document Number: 88974
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
100
10
10
Junction to Case
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
1
TA = 25 °C
V(B,I)30120S
0.1
0.01
0.1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
100
10
Junction to Case
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
1
0.1
TA = 25 °C
0.01
VF30120S
0.001
0.1
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 05-Nov-13
Document Number: 88974
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.076 (1.93) REF.
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
7° REF.
45° REF.
0.113 (2.87)
0.103 (2.62)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.145 (3.68)
0.135 (3.43)
7° REF.
0.580 (14.73)
PIN
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.191 (4.85)
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 3
PIN 2
0.045 (1.14)
HEATSINK
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
NC
K
A
0.670 (17.02)
0 to 0.01 (0 to 0.254)
0.591 (15.00)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 05-Nov-13
Document Number: 88974
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
Document Number: 91000
1
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