V40100PW [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器型号: | V40100PW |
厂家: | VISHAY |
描述: | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
文件: | 总4页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
V40100PW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TO-3PW
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
100 V
VRRM
Base P/N-M3
- halogen-free and RoHS compliant,
commercial grade
IFSM
300 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
EAS at L = 100 mH
VF at IF = 20 A
TJ max.
280 mJ
0.61 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100PW
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
40
V
per device
per diode
Maximum average forward rectified current (fig. 1)
IF(AV)
A
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
EAS
300
280
1.0
A
mJ
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C 2 °C per diode
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89179
Revision: 09-Feb-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
V40100PW
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
I
R = 1.0 mA
TA = 25 °C
TA = 25 °C
VBR
100 (minimum)
-
V
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
0.48
0.56
0.69
0.39
0.50
0.61
23
-
-
0.77
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
-
0.69
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 70 V
11
-
(2)
Reverse current per diode
IR
-
1000
80
VR = 100 V
29
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100PW
UNIT
per diode
per device
1.5
0.8
Typical thermal resistance
RθJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-3PW
V40100PW-M3/4W
4.5
4W
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
50
18
16
14
12
D = 0.8
D = 0.5
Resistive or Inductive Load
D = 0.3
40
D = 0.2
30
20
D = 1.0
D = 0.1
10
8
T
6
4
10
2
Mounted on Specific Heatsink
D = tp/T
16
tp
0
0
0
25
50
75
100
125
150
175
0
4
8
12
20
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89179
Revision: 09-Feb-10
New Product
V40100PW
Vishay General Semiconductor
100
10
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
1000
1
TA = 25 °C
0.1
100
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TA = 150 °C
TA = 125 °C
10
1
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
20
30
40
50
60
70
80
90
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3PW
0.645 (16.38)
0.175 (4.45)
0.625 (15.87)
0.165 (4.19)
0.551 (14.00)
0.537 (13.64)
0.050 (1.27)
3° Ref.
R0.155 (R3.94)
R0.145 (R3.68)
0.323 (8.20)
0.313 (7.95)
30° Ref.
0.245 (6.23)
0.225 (5.72)
0.077 (1.96)
0.063 (1.60)
0.170 (4.32)
10° Typ.
Both Sides
0.840 (21.34)
0.820 (20.83)
0.467 (11.86)
0.453 (11.51)
0.079 (2.01)
0.065 (1.65)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.160 (4.06)
0.140 (3.56)
5° Ref.
Both Sides
3° Ref.
3° Ref.
0.090 (2.29)
0.080 (2.03)
0.098 (2.50)
0.083 (2.12)
0.565 (14.35)
0.545 (13.84)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.030 (0.75)
0.020 (0.50)
0.225 (5.72)
0.205 (5.21)
Document Number: 89179
Revision: 09-Feb-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Document Number: 91000
Revision: 11-Mar-11
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