V40M120C [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器


型号：	V40M120C
厂家：	VISHAY
描述：	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 双高压Trench MOS势垒肖特基整流器高压
文件：	总5页 (文件大小：725K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

New Product

V40M120C, VI40M120C

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.46 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

TO-262AA

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

VI40M120C

V40M120C

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

PIN 3

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 20 A

Base P/N-M3

- halogen-free, RoHS compliant, and

V_RRM

120 V

250 A

0.64 V

150 °C

commercial grade

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 20 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40M120C

VI40M120C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Revision: 11-Jan-12

Document Number: 89465

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product

V40M120C, VI40M120C

Vishay General Semiconductor

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 5 A

0.54

0.64

0.79

0.46

0.54

0.64

I_F= 10 A

I_F= 20 A

I_F= 5 A

T_A= 25 °C

0.89

(1)

Instantaneous forward voltage per diode

V_F

I_F= 10 A

I_F= 20 A

T_A= 125 °C

0.72

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

μA

V_R= 90 V

(2)

Reverse current per diode

I_R

500

V_R= 120 V

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 20 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40M120C

VI40M120C

UNIT

Typical thermal resistance per diode

R_θJC

1.8

°C/W

ORDERING INFORMATION (Example)

PACKAGE

TO-220AB

TO-262AA

PREFERRED P/N

V40M120C-M3/4W

VI40M120C-M3/4W

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

1.88

1.45

Tube

50/tube

RATINGS AND CHARACTERISTICS CURVES

(T_A= 25 °C unless otherwise noted)

18.0

16.0

14.0

12.0

10.0

8.0

D = 0.8

Resistive or Inductive Load

D = 0.5

D = 0.3

D = 0.2

D = 0.1

D = 1.0

6.0

4.0

2.0

D = t_p/T

t_p

Mounted on Specific Heatsink

0.0

100

125

150

175

10 12 14 16 18 20 22 24

Average Forward Current (A)

Fig. 2 - Forward Power Loss Characteristics Per Diode

Case Temperature (°C)

Fig. 1 - Maximum Forward Current Derating Curve

Revision: 11-Jan-12

Document Number: 89465

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product

V40M120C, VI40M120C

Vishay General Semiconductor

www.vishay.com

100

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_A= 150 °C

1000

100

T_A= 125 °C

T_A= 100 °C

T_A= 25 °C

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

Junction to Case

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

0.1

0.01

0.001

0.0001

T_A= 25 °C

0.1

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Revision: 11-Jan-12

Document Number: 89465

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product

V40M120C, VI40M120C

Vishay General Semiconductor

www.vishay.com

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

0.415 (10.54) MAX.

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.370 (9.40)

0.360 (9.14)

0.154 (3.91)

0.148 (3.74)

0.113 (2.87)

0.103 (2.62)

0.145 (3.68)

0.135 (3.43)

0.603 (15.32)

0.573 (14.55)

0.635 (16.13)

0.625 (15.87)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.045 (1.14)

0.560 (14.22)

0.530 (13.46)

0.105 (2.67)

0.095 (2.41)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.104 (2.65)

0.096 (2.45)

0.022 (0.56)

0.014 (0.36)

TO-262AA

0.185 (4.70)

0.175 (4.44)

0.411 (10.45) MAX.

0.250 (6.35) MIN.

0.055 (1.40)

0.047 (1.19)

30° (TYP.)

(REF.)

0.055 (1.40)

0.045 (1.14)

0.401 (10.19)

0.381 (9.68)

0.350 (8.89)

0.950 (24.13)

0.920 (23.37)

0.510 (12.95)

0.470 (11.94)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.560 (14.22)

0.530 (13.46)

0.045 (1.14)

0.035 (0.90)

0.028 (0.70)

0.022 (0.56)

0.014 (0.35)

0.104 (2.65)

0.096 (2.45)

0.205 (5.20)

0.195 (4.95)

Revision: 11-Jan-12

Document Number: 89465

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

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Revision: 12-Mar-12

Document Number: 91000

V40M120C [VISHAY]

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