V40M150C-M3_15 [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier;


型号：	V40M150C-M3_15
厂家：	VISHAY
描述：	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
文件：	总4页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V40M150C-M3, V40M150CHM3

www.vishay.com

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.55 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

V40M150C

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 2

CASE

MECHANICAL DATA

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_F(AV)

2 x 20 A

150 V

V_RRM

I_FSM

halogen-free, RoHS-compliant, and

160 A

V_Fat I_F= 20 A (T_A= 125 °C)

T_Jmax.

0.75 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

175 °C

TO-220AB

Package

Diode variations

Dual common cathode

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40M150C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

150

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

160

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

°C

Revision: 10-Jan-14

Document Number: 87780

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V40M150C-M3, V40M150CHM3

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.69

0.84

1.15

0.55

0.64

0.75

MAX.

UNIT

I_F= 5 A

I_F= 10 A

I_F= 20 A

I_F= 5 A

T_A= 25 °C

1.43

(1)

Instantaneous forward voltage per diode

V_F

I_F= 10 A

I_F= 20 A

T_A= 125 °C

0.82

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

μA

V_R= 100 V

V_R= 150 V

2.5

(2)

Reverse current per diode

I_R

250

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  5 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40M150C

UNIT

per diode

per device

1.8

1.2

R_JC

Typical thermal resistance ⁽¹⁾

°C/W

(2)

R_JA

Notes

(1)

The heat generated must be less than the thermal conductivity from junction-to-ambient dP_D/dT_J< 1/R_JA

Free air, without heatsink

(2)

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

V40M150C-M3/4W

V40M150CHM3/4W ⁽¹⁾

1.89

50/tube

Tube

Note

(1)

AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

20.0

18.0

16.0

14.0

12.0

10.0

8.0

With heatsink, Rth_JC=1.8^oC/W

D = 0.8

D = 1.0

D = 0.5

D = 0.3

D = 0.2

D = 0.1

6.0

Free air, without heatsink,

Rth_JA=52^oC/W

4.0

2.0

0.0

10 12 14 16 18 20 22 24

100

125

150

175

Average Forward Current (A)

Case Temperature (°C)

Fig. 1 - Maximum Forward Current Derating Curve

(D = Duty Cycle = 0.5)

Fig. 2 - Forward Power Loss Characteristics Per Diode

Revision: 10-Jan-14

Document Number: 87780

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V40M150C-M3, V40M150CHM3

www.vishay.com

Vishay General Semiconductor

10 000

T_J= 25 °C

f = 1.0 MHz

T_A= 175 °C

T_A= 150 °C

V_sig= 50 mV

p-p

1000

100

T_A= 125 °C

T_A= 100 C

T_A= 25 °C

0.1

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

100

T_A= 175 °C

Junction to Case

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

0.1

0.01

0.001

0.0001

T_A= 25 °C

0.1

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

0.415 (10.54) MAX.

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.370 (9.40)

0.360 (9.14)

0.154 (3.91)

0.148 (3.74)

0.113 (2.87)

0.103 (2.62)

0.145 (3.68)

0.135 (3.43)

0.603 (15.32)

0.635 (16.13)

0.625 (15.87)

0.573 (14.55)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.045 (1.14)

0.560 (14.22)

0.530 (13.46)

0.105 (2.67)

0.095 (2.41)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.104 (2.65)

0.096 (2.45)

0.022 (0.56)

0.014 (0.36)

Revision: 10-Jan-14

Document Number: 87780

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 02-Oct-12

Document Number: 91000

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