V60M120C-M3_15 [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | V60M120C-M3_15 |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V60M120C-M3, V60M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
TO-220AB
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
TYPICAL APPLICATIONS
V60M120C
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 1
PIN 2
K
CASE
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
IF(AV)
2 x 30 A
120 V
VRRM
IFSM
-
halogen-free, RoHS-compliant, and
300 A
VF at IF = 30 A (TA = 125 °C)
TJ max.
0.69 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
175 °C
TO-220AB
Package
Diode variations
Dual common cathode
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60M120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
60
V
per device
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +175
Revision: 13-Jan-14
Document Number: 87781
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V60M120C-M3, V60M120CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.51
0.68
0.86
0.43
0.58
0.69
75
MAX.
UNIT
IF = 5 A
-
IF = 15 A
IF = 30 A
IF = 5 A
TA = 25 °C
-
0.97
-
(1)
Instantaneous forward voltage per diode
VF
V
IF = 15 A
IF = 30 A
TA = 125 °C
-
0.77
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 90 V
6.4
-
(2)
Reverse current per diode
IR
-
500
35
VR = 120 V
10
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60M120C
UNIT
per diode
per device
per device
1.0
0.7
52
RJC
Typical thermal resistance (1)
°C/W
(2)
RJA
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient dPD/dTJ < 1/RJA
Free air, without heatsink
(2)
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
TO-220AB
V60M120C-M3/4W
V60M120CHM3/4W (1)
1.89
1.89
4W
4W
50/tube
50/tube
Tube
Tube
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
70
60
50
40
30
20
10
0
22
20
18
16
14
12
10
8
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
With heatsink, RthJC = 0.7 °C/W
D = 1.0
T
6
Free air, without heatsink,
RthJA = 52 °C/W
4
D = tp/T
tp
2
0
0
25
50
75
100
125
150
175
0
4
8
12 16 20 24 28 32 36
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 13-Jan-14
Document Number: 87781
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V60M120C-M3, V60M120CHM3
www.vishay.com
Vishay General Semiconductor
10 000
100
10
1
T = 25 °C
J
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 175°C
TA = 150°C
TA = 125°C
1000
TA = 100°C
TA = 25°C
0.1
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
1
TA = 175°C
Junction to Case
TA = 150°C
10
TA = 125°C
TA = 100°C
1
0.1
0.01
TA = 25°C
0.1
0.001
0.01
0.1
1
10
Pulse Duration (s)
t -
100
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.635 (16.13)
0.625 (15.87)
0.573 (14.55)
0.350 (8.89)
PIN
1
2
3
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
Revision: 13-Jan-14
Document Number: 87781
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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