V8PAN50-M3I [VISHAY]

Surface Mount Trench MOS Barrier Schottky Rectifier;
V8PAN50-M3I
型号: V8PAN50-M3I
厂家: VISHAY    VISHAY
描述:

Surface Mount Trench MOS Barrier Schottky Rectifier

文件: 总5页 (文件大小:135K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
V8PAN50-M3  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Trench MOS Barrier Schottky Rectifier  
FEATURES  
• Very low profile - typical height of 0.95 mm  
• Ideal for automated placement  
TMBS® SMPATM  
• Trench MOS Schottky technology  
• Low power losses, high efficiency  
• Low forward voltage drop  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Top View  
Bottom View  
DO-221BC (SMPA)  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
8.0 A  
50 V  
Case: DO-221BC (SMPA)  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IFSM  
VF at IF = 8.0 A (TA = 125 °C)  
TJ max.  
120 A  
0.41 V  
150 °C  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
Package  
DO-221BC (SMPA)  
Single die  
Diode variation  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V8PAN50  
8N5  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
50  
V
A
(1)  
IF  
8.0  
3.7  
Maximum DC forward current  
Maximum DC reverse voltage  
(2)  
IF  
VDC  
35  
V
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
120  
A
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Notes  
(1)  
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB  
Free air, mounted on recommended copper pad area  
(2)  
Revision: 20-Oct-16  
Document Number: 87911  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
V8PAN50-M3  
Vishay General Semiconductor  
www.vishay.com  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.42  
0.48  
0.32  
0.41  
MAX.  
-
UNIT  
IF = 4.0 A  
TA = 25 °C  
IF = 8.0 A  
IF = 4.0 A  
IF = 8.0 A  
0.56  
-
(1)  
Instantaneous forward voltage  
VF  
V
TA = 125 °C  
0.50  
TA = 25 °C  
TA = 125 °C  
TA = 25 °C  
TA = 125 °C  
25  
19  
-
-
-
μA  
mA  
μA  
V
R = 35 V  
(2)  
Reverse current  
IR  
1500  
70  
VR = 50 V  
31  
mA  
Typical junction capacitance  
4.0 V, 1 MHz  
CJ  
1060  
-
pF  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 5 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
V8PAN50  
UNIT  
(1)  
RJA  
100  
5
Typical thermal resistance  
°C/W  
(2)  
RJM  
Notes  
(1)  
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RJA - junction to ambient  
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. pad area; thermal resistance RJM - junction to mount  
(2)  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE BASE QUANTITY  
14 000  
DELIVERY MODE  
V8PAN50-M3/I  
0.032  
I
13" diameter plastic tape and reel  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)  
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
TM =132 ƱC, RthJM =5 ƱC/W  
D = 0.8  
D = 0.5  
D = 0.3  
D = 0.2  
D = 1.0  
D = 0.1  
TA =25 ƱC, RthJA =100 ƱC/W  
TM measured at cathode band  
terminal PCB mount  
0
1
2
3
4
5
6
7
8
9
10  
0
25  
50  
75  
100  
125  
150  
Average Forward Current (A)  
Mount Temperature (°C)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 2 - Forward Power Loss Characteristics  
Revision: 20-Oct-16  
Document Number: 87911  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
V8PAN50-M3  
Vishay General Semiconductor  
www.vishay.com  
50  
10  
1000  
100  
10  
Junction to Ambient  
T
A
= 150 °C  
TA = 125 °C  
1
TA  
= 100 °C  
TA = 25 °C  
0.1  
1
0.01  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
t -Pulse Duration (s)  
Fig. 6 - Typical Transient Thermal Impedance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
1000  
Epoxy printed circiut  
board FR4 copper  
thickness = 70μm  
100  
10  
TA = 150 °C  
TA = 125 °C  
TA = 100 °C  
1
0.1  
0.01  
TA = 25 °C  
S (cm2)  
0
1
2
3
4
5
6
7
8
9
10 20 30 40 50 60 70 80 90 100  
Copper Pad Areas (cm2)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 7 - Thermal Resistance Junction to Ambient vs.  
Copper Pad Areas  
Fig. 4 - Typical Reverse Leakage Characteristics  
10 000  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
1000  
100  
0.1  
1
10  
100  
Reverse Voltage (V)  
Fig. 5 - Typical Junction Capacitance  
Revision: 20-Oct-16  
Document Number: 87911  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
V8PAN50-M3  
Vishay General Semiconductor  
www.vishay.com  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-221BC (SMPA)  
0.059 (1.50)  
0.030 (0.75)  
0.122 (3.10)  
0.098 (2.50)  
Cathode Band  
0.057 (1.45)  
0.049 (1.25)  
0.106 (2.70)  
0.098 (2.50)  
0.087 (2.20)  
0.063 (1.6)  
0.171 (4.35)  
0.163 (4.15)  
0.211 (5.35)  
0.199 (5.05)  
0.059 (1.50)  
0.030 (0.75)  
Typ.: 0.019 (0.48)  
Mounting Pad Layout  
MAX. 0.037 (0.92)  
0.039 (1.00)  
0.035 (0.90)  
0.012 (0.30)  
0.006 (0.15)  
0.087 (2.20)  
MIN.  
0.060 (1.52)  
MIN.  
MIN.  
0.059 (1.50)  
MIN. 0.122 (3.10)  
0.217 (5.52)  
Revision: 20-Oct-16  
Document Number: 87911  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Revision: 13-Jun-16  
Document Number: 91000  
1

相关型号:

V8PL6-M3

Low forward voltage drop, low power losses
VISHAY

V8PL6-M3_15

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VISHAY

V8PM10HM3/H

DIODE SCHOTTKY 100V 8A TO277A
VISHAY

V8PM10HM3/I

DIODE SCHOTTKY 100V 8A TO277A
VISHAY

V8PM10S

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
VISHAY

V8PM10S-M3/H

DIODE SCHOTTKY 100V 8A TO277A
VISHAY

V8PM10S-M3/I

DIODE SCHOTTKY 100V 8A TO277A
VISHAY

V8PM10SHM3/H

DIODE SCHOTTKY 100V 8A TO277A
VISHAY

V8PM10SHM3/I

DIODE SCHOTTKY 100V 8A TO277A
VISHAY

V8PM10_15

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VISHAY

V8PM12-M3

Trench MOS Schottky technology
VISHAY

V8PM12-M3_15

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VISHAY