VB10150S-M3 [VISHAY]
Low forward voltage drop, low power losses;
| 型号： | VB10150S-M3 |
| 厂家： | 
VISHAY |
| 描述： | Low forward voltage drop, low power losses |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VB10150S-M3
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5.0 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
A
• Material categorization:
For definitions of compliance please see
NC
www.vishay.com/doc?99912
VB10150S
TYPICAL APPLICATIONS
NC
A
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
HEATSINK
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Package
TO-263AB
10 A
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
VRRM
150 V
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
IFSM
120 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 10 A
TJ max.
0.69 V
150 °C
Single die
Diode variations
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
IF(AV)
VB10150S
150
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
V
A
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.79
1.05
0.59
0.69
1.3
1.2
-
MAX.
UNIT
IF = 5.0 A
-
1.20
-
TA = 25 °C
IF = 10 A
IF = 5.0 A
IF = 10 A
Instantaneous forward voltage
VF
V
per diode (1)
TA = 125 °C
0.75
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 100 V
VR = 150 V
-
Reverse current per diode (2)
IR
150
15
3
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
Revision: 30-Aug-13
Document Number: 87992
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10150S-M3
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB10150S
UNIT
Typical thermal resistance
RJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB10150S-M3/4W
VB10150S-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.37
1.37
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
100
10
1
Resistive or Inductive Load
TA = 150 °C
10
8
TA = 125 °C
6
TA = 100 °C
4
TA = 25 °C
2
Mounted on Specific Heatsink
0
0.1
0
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10
D = 0.8
D = 0.5
D = 0.3
TA = 150 °C
10
8
D = 0.2
TA = 125 °C
1
6
D = 1.0
TA = 100 °C
D = 0.1
0.1
4
T
2
0.01
TA = 25 °C
D = tp/T
8
tp
0
0.001
0
2
4
6
10
12
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 30-Aug-13
Document Number: 87992
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10150S-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
10
1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 30-Aug-13
Document Number: 87992
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 13-Jun-16
Document Number: 91000
1
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