VB30100S-M3/4W [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2;
| 型号： | VB30100S-M3/4W |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2 功效 瞄准线 二极管 |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VB30100S-M3
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
TO-263AB
• High efficiency operation
• Low thermal resistance
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
NC
VB30100S
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
NC
A
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Package
TO-263AB
30 A
IF(AV)
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
100 V
commercial grade
IFSM
250 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 30 A
TJ max.
0.69 V
150 °C
Polarity: As marked
Diode variations
Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VB30100S
100
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
V
A
IF(AV)
30
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
250
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.47
0.55
0.80
0.39
0.49
0.69
27
-
IF = 10 A
IF = 30 A
IF = 5 A
TA = 25 °C
-
0.91
-
Instantaneous forward voltage (1)
VF
V
IF = 10 A
IF = 30 A
TA = 125 °C
-
0.78
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 70 V
11
-
Reverse current (2)
IR
70
1000
45
VR = 100 V
23
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
Revision: 15-May-13
Document Number: 87985
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100S-M3
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30100S
UNIT
Typical thermal resistance
RJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB30100S-M3/4W
VB30100S-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.380
4W
8W
1.380
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
100
10
1
Resistive or Inductive Load
30
TA = 150 °C
25
20
15
10
TA = 125 °C
TA = 25 °C
5
0
Mounted on Specific Heatsink
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
32
28
24
20
16
12
8
1000
D = 0.5
D = 0.8
D = 0.3
100
10
TA = 150 °C
TA = 125 °C
D = 0.2
D = 0.1
D = 1.0
1
0.1
0.01
T
TA = 25 °C
4
D = tp/T
24
tp
32
0
0.001
0
4
8
12
16
20
28
36
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 15-May-13
Document Number: 87985
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100S-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
10
1
Junction to Case
0.1
0.01
0.001
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
NC
K
A
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 15-May-13
Document Number: 87985
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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