VBT1045BP [VISHAY]
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection; Trench MOS势垒肖特基整流器用于光伏太阳能电池旁路保护型号: | VBT1045BP |
厂家: | VISHAY |
描述: | Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection |
文件: | 总4页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VBT1045BP
Vishay General Semiconductor
www.vishay.com
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.41 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
TO-263AB
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Compliant to RoHS Directive 2011/65/EU
2
1
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
VBT1045BP
PIN 1
PIN 2
K
HEATSINK
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
PRIMARY CHARACTERISTCS
IF(DC)
10 A
45 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VRRM
IFSM
100 A
0.52 V
150 °C
200 °C
VF at IF = 10 A
Polarity: As marked
T
OP max. (AC mode)
Mounting Torque: 10 in-lbs maximum
TJ max. (DC forward current)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT1045BP
UNIT
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
VRRM
45
10
V
A
(1)
IF(DC)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
TOP
100
- 40 to + 150
200
A
Operating junction temperature range (AC mode)
°C
°C
Junction temperature in DC forward current
without reverse bias, t 1 h
(2)
TJ
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
Revision: 23-Feb-12
Document Number: 89452
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1045BP
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.50
0.57
0.41
0.52
-
MAX.
-
UNIT
IF = 5 A
TA = 25 °C
IF = 10 A
IF = 5 A
0.68
-
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
IF = 10 A
0.64
500
15
TA = 25 °C
μA
(2)
Reverse current
VR = 45 V
IR
TA = 125 °C
5
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT1045BP
UNIT
Typical thermal resistance
RJC
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VBT1045BP-E3/4W
VBT1045BP-E3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
1.37
1.37
4W
8W
50/tube
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
100
TA = 150 °C
8
6
4
10
1
TA = 125 °C
TA = 100 °C
DC Forward Current at
2
Thermal Equilibrium
TA = 25 °C
0
0.1
0
25
50
75
100 125 150 175 200
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-12
Document Number: 89452
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1045BP
Vishay General Semiconductor
www.vishay.com
100
10
10
Junction to Case
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
0.1
0.01
0.001
TA = 25 °C
1
0.01
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 23-Feb-12
Document Number: 89452
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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