VBT2045BP-M3 [VISHAY]
High efficiency operation;
| 型号： | VBT2045BP-M3 |
| 厂家： | 
VISHAY |
| 描述： | High efficiency operation |
| 文件： | 总4页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VBT2045BP-M3
Vishay General Semiconductor
www.vishay.com
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
TO-263AB
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
1
PIN 1
PIN 2
K
TYPICAL APPLICATIONS
HEATSINK
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTCS
Package
TO-263AB
20 A
MECHANICAL DATA
Case: TO-263AB
IF(DC)
Molding compound meets UL 94 V-0 flammability rating
VRRM
45 V
Base P/N-M3
commercial grade
- halogen-free, RoHS-compliant, and
IFSM
160 A
VF at IF = 20 A
0.51 V
150 °C
200 °C
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
T
OP max. (AC mode)
TJ max. (DC forward current)
Diode variation
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045BP
UNIT
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
VRRM
45
20
V
A
(1)
IF(DC)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
TOP
160
- 40 to + 150
200
A
Operating junction temperature range (AC mode)
°C
°C
Junction temperature in DC forward current
without reverse bias, t 1 h
(2)
TJ
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
Revision: 23-Feb-12
Document Number: 87966
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT2045BP-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.44
0.49
0.57
0.33
0.41
0.51
-
-
-
IF = 10 A
IF = 20 A
IF = 5 A
TA = 25 °C
0.66
-
(1)
Instantaneous forward voltage
VF
V
IF = 10 A
IF = 20 A
TA = 125 °C
-
0.63
2000
30
TA = 25 °C
μA
(2)
Reverse current
VR = 45 V
IR
TA = 125 °C
10
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045BP
UNIT
Typical thermal resistance
RJC
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
TO-263AB
VBT2045BP-M3/4W
VBT2045BP-M3/8W
1.37
1.37
4W
8W
50/tube
800/reel
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
20
100
TA = 150 °C
16
12
8
10
T
A = 125 °C
T
A = 100 °C
1
TA = 25 °C
DC Forward Current at
4
Thermal Equilibrium
0.1
0
0
25
50
75
100 125 150 175 200
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-12
Document Number: 87966
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT2045BP-M3
Vishay General Semiconductor
www.vishay.com
10
100
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
1
0.1
TA = 25 °C
0.01
0.001
0.1
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Fig. 3 - Typical Reverse Characteristics
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 23-Feb-12
Document Number: 87966
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
Document Number: 91000
1
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