VBT3060G [VISHAY]
Dual High Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | VBT3060G |
| 厂家： | 
VISHAY |
| 描述： | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VT3060G, VFT3060G, VBT3060G, VIT3060G
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Not recommended for PCB bottom side wave mounting
3
3
2
2
1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
1
VT3060G
VFT3060G
PIN 1
PIN 1
PIN 2
CASE
PIN 2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PIN 3
PIN 3
TO-263AB
TO-262AA
TYPICAL APPLICATIONS
K
K
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
MECHANICAL DATA
3
1
2
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
1
VBT3060G
VIT3060G
TO-262AA
PIN 1
PIN 2
K
PIN 1
PIN 2
K
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
HEATSINK
PIN 3
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
60 V
VRRM
Polarity: As marked
IFSM
150 A
0.61 V
150 °C
Mounting Torque: 10 in-lbs max.
VF at IF = 15 A
TJ max.
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Package
Diode variations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT3060G
VFT3060G VBT3060G VIT3060G
UNIT
Max. repetitive peak reverse voltage
VRRM
60
30
15
V
per device
per diode
Max. average forward rectified current
(fig. 1)
IF(AV)
IFSM
EAS
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
150
120
1.0
A
mJ
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C per diode
IRRM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Revision: 16-Aug-13
Document Number: 89135
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3060G, VFT3060G, VBT3060G, VIT3060G
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
60 (min.)
0.49
MAX.
UNIT
Breakdown voltage
I
R = 1.0 mA
TA = 25 °C
VBR
-
V
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
-
TA = 25 °C
0.53
-
0.73
-
0.65
Instantaneous forward voltage per diode (1)
VF
V
0.40
TA = 125 °C
0.46
-
0.61
0.69
TA = 25 °C
TA = 125 °C
-
14
850
40
μA
mA
Reverse current per diode (2)
VR = 60 V
IR
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3060G
VFT3060G
VBT3060G
3.2
VIT3060G
3.2
UNIT
per diode
per device
3.2
6.2
Typical thermal resistance
RJC
°C/W
1.9
5.0
1.9
1.9
ORDERING INFORMATION (EXAMPLE)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT3060G-E3/4W
VFT3060G-E3/4W
VBT3060G-E3/4W
VBT3060G-E3/8W
VIT3060G-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.88
1.76
1.39
1.39
1.45
4W
4W
4W
8W
4W
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
36
14
12
10
8
D = 0.8
D = 0.5
D = 0.3
32
28
24
20
16
12
8
V(B,I)T3060G
D = 0.2
VFT3060G
D = 1.0
T
D = 0.1
6
4
2
0
4
D = tp/T
tp
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Revision: 16-Aug-13
Document Number: 89135
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3060G, VFT3060G, VBT3060G, VIT3060G
www.vishay.com
Vishay General Semiconductor
100
10
1
10
Junction to Case
TA = 150 °C
VFT3060G
TA = 125 °C
V(B,I)T3060G
TA = 100 °C
TA = 25 °C
0.1
1
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Transient Thermal Impedance Per Diode
100
10 000
TA = 150 °C
10
TA = 125 °C
1000
100
10
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
0.1
1
10
100
20
30
40
50
60
70
80
90
100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.113 (2.87)
0.103 (2.62)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
Revision: 16-Aug-13
Document Number: 89135
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3060G, VFT3060G, VBT3060G, VIT3060G
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 3
PIN 2
0.045 (1.14)
HEATSINK
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591(15.00)
1
K
2
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
Revision: 16-Aug-13
Document Number: 89135
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
Document Number: 91000
1
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