VESD01A2-03G [VISHAY]
Dual-Line ESD-Protection Diode Array in SOT-323;
| 型号： | VESD01A2-03G |
| 厂家： | 
VISHAY |
| 描述： | Dual-Line ESD-Protection Diode Array in SOT-323 |
| 文件： | 总10页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
Dual-Line ESD-Protection Diode Array in SOT-323
FEATURES
• Compact SOT-323 package
1
2
• 2-line unidirectional ESD-protection
• AEC-Q101 qualified available
• Working range 1 V to 33 V
3
• ESD immunity acc. IEC 61000-4-2
20456
15 kV to 30 kV contact discharge
15 kV to 30 kV air discharge
22743
SOT-323
• Lead plating: Sn (e3)
MARKING (example only)
- soldering can be checked by standard vision
inspection
- AOI = Automated Optical Inspection
WW
VY
ABC
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
22744
ABC = type code (see table below)
WW = date code working week
VY = date code year
DESIGN SUPPORT TOOLS AVAILABLE
3
D
3D Models
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
RoHS COMPLIANT +
LEAD (Pb)-FREE
TERMINATIONS
PART NUMBER
(EXAMPLE)
AEC-Q101
QUALIFIED
8K PER 7" REEL
(8 mm TAPE)
ORDERING CODE
(EXAMPLE)
TIN PLATED
GREEN
MOQ = 8K/BOX
VESD05A2-03G
VESD05A2-03G
-
G
G
3
3
-08
-08
VESD05A2-03G-G3-08
VESD05A2-03GHG3-08
H
PACKAGE DATA
PACKAGE TYPE
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
DEVICE NAME
WEIGHT
SOLDERING CONDITIONS
NAME
CODE
D01
D03
D05
D08
D12
D16
D26
D33
SENSITIVITY LEVEL
VESD01A2-03G-G3
VESD03A2-03G-G3
VESD05A2-03G-G3
VESD08A2-03G-G3
VESD12A2-03G-G3
VESD16A2-03G-G3
VESD26A2-03G-G3
VESD33A2-03G-G3
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
MSL level 1
(according J-STD-020)
5.2 mg
UL 94 V-0
Peak temperature max. 260 °C
Rev. 1.1, 13-Feb-2020
Document Number: 86150
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS VESD01A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
14.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD03A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
11.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD05A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
8.7
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD08A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
6.60
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
Rev. 1.1, 13-Feb-2020
Document Number: 86150
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS VESD12A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
4.4
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD16A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
3.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD26A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
2.1
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
20
kV
kV
°C
°C
ESD immunity
VESD
20
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD33A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
1.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
15
kV
kV
°C
°C
ESD immunity
VESD
15
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
Rev. 1.1, 13-Feb-2020
Document Number: 86150
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD01A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 100 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
1
1
1.2
20
-
V
Reverse current
at VR = 1 V
IR
-
100
2.8
6.9
1.2
3.92
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 20 mA
VBR
VC
2.5
-
2.65
6.2
1.1
3
at IPP = IPPM = 14.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 14.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
0.13
192
Ω
Capacitance
CD
153
230
pF
ELECTRICAL CHARACTERISTICS VESD03A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 20 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
3
3
-
-
V
Reverse current
at VR = 3 V
IR
-
8
20
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
4.4
-
4.65
7.8
1.1
2.6
0.19
112
4.9
8.70
1.2
3.32
-
at IPP = IPPM = 11.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 11.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
89
135
pF
ELECTRICAL CHARACTERISTICS VESD05A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
Reverse stand off voltage
Reverse voltage
-
5
-
5
-
-
V
Reverse current
at VR = 5 V
IR
-
0.01
7.26
10.3
1.1
2.2
0.2
67
0.1
7.65
11.5
1.2
2.74
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
6.85
-
at IPP = IPPM = 8.7 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 8.7 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
53
81
pF
Rev. 1.1, 13-Feb-2020
Document Number: 86150
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD08A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
8
8
-
-
V
Reverse current
at VR = 8 V
IR
-
0.01
10
0.1
10.5
15.3
1.2
2.32
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
9.5
-
at IPP = IPPM = 6.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
13.7
1.1
1.9
0.23
47
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 6.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
37
57
pF
ELECTRICAL CHARACTERISTICS VESD12A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
12
12
-
-
-
V
Reverse current
at VR = 12 V
IR
0.01
14.7
20.5
1.1
1.6
0.4
33
0.1
15.5
22.7
1.2
1.88
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
13.9
-
at IPP = IPPM = 4.4 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 4.4 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
26
40
pF
ELECTRICAL CHARACTERISTICS VESD16A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
16
16
-
-
-
V
Reverse current
at VR = 16 V
IR
0.01
17.9
25.3
1.1
1.5
0.53
27
0.1
18.8
28
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
17
-
at IPP = IPPM = 3.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.2
1.72
-
V
Forward clamping voltage
at IPP = IPPM = 3.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
21
33
pF
Rev. 1.1, 13-Feb-2020
Document Number: 86150
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD26A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
26
26
-
-
-
V
Reverse current
at VR = 26 V
IR
< 0.01
29.1
43
0.1
30.6
48
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
27.6
-
at IPP = IPPM = 2.1 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.1
1.3
1.9
17.5
1.2
1.42
-
V
Forward clamping voltage
at IPP = IPPM = 2.1 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
14
21
pF
ELECTRICAL CHARACTERISTICS VESD33A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
33
33
-
-
-
V
Reverse current
at VR = 33 V
IR
< 0.01
37.4
56
0.1
39.3
62.5
1.2
1.32
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
35.5
-
at IPP = IPPM = 1.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.1
1.22
3.6
15
V
Forward clamping voltage
at IPP = IPPM = 1.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
12
18
pF
Rev. 1.1, 13-Feb-2020
Document Number: 86150
6
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
Axis Title
120
100
80
10000
1000
100
Rise time = 0.7 ns to 1 ns
VESD01...
100
VESD03...
VESD05...
VESD08...
60
53
VESD12...
10
VESD16...
40
27
VESD26...
VESD33...
20
f = 1 MHz
1
0.01
0
10
0.1
1
10
100
-10
0
10 20 30 40 50 60 70 80 90 100
VR (V)
2nd line
20557
t (ns)
2nd line
Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2
Fig. 4 - Typical Capacitance vs. Reverse Voltage
(330 Ω / 150 pF)
Axis Title
10000
40
VESD33...
VESD26...
100
80
60
40
20
0
8 µs to 100 %
35
30
25
20
15
10
5
1000
100
10
20 µs to 50 %
VESD16...
VESD12...
VESD08...
VESD05...
0
0.001 0.01 0.1
1
10
IR (µA)
2nd line
100 1000 10 000
0
10
20
30
40
20548
t (µs)
2nd line
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5
Fig. 5 - Typical Reverse Voltage vs. Reverse Current
65
60
VESD33...
VESD33...
100
VESD26...
55
50
45
40
35
30
25
20
15
10
5
Measured according IEC 61000-4-5
(8/20 µs - wave form)
VESD16...
VESD12...
VESD08...
VESD05...
VESD03...
VESD26...
VESD01...
10
VESD16...
VESD12...
VESD08...
VESD05...
Transmission line pulse (TLP):
VESD03...
t
p = 100 ns
VESD01...
1
0
1
10
ITLP (A)
2nd line
100
0
5
10
15
20
IPP (A)
2nd line
Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current
Rev. 1.1, 13-Feb-2020
Document Number: 86150
7
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VESD03...
to
VESD33...
VESD01...
1.0
Measured according IEC 61000-4-5
(8/20 µs - wave form)
0.5
0
1E-08 1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01
0
10
20
30
IF (A)
2nd line
IF (A)
2nd line
Fig. 7 - Typical Forward Voltage vs. Forward Current
Fig. 8 - Typical Forward Voltage vs. Forward Current
PACKAGE DIMENSIONS in millimeters (inches): SOT-323
2.2 (0.087)
2.0 (0.079)
0.46 (0.018)
0.26 (0.010)
0.525 (0.021) ref.
0.4 (0.016)
0.2 (0.008)
2.45 (0.096)
2.15 (0.085)
foot print recommendation:
0.6 (0.024)
0.65 (0.026) typ
1.4 (0.055)
1.2 (0.047)
Document no.: 6.541-5040.02-4
Rev. 1 - Date: 06. April 2010
21113
0.65 (0.026)
1.3 (0.051)
Rev. 1.1, 13-Feb-2020
Document Number: 86150
8
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
CARRIER TAPE SOT-323
A-A Section
0.254 0.013
2
0.05
4
0.1
A
+0.1
0.0
Ø 1.55
+0.25
0.00
Ø 1
B
B
A
1.19 0.1
4
0.1
B-B Section
2.4 0.1
Document no.: S8-V-3717.08-002 (4)
Created - Date: 09. Feb. 2010
22762
ORIENTATION IN CARRIER TAPE SOT-323
Unreeling direction
Document no.: S8-V-3717.08-002 (4)
Created - Date: 09. Feb. 2010
22761
Top view
Rev. 1.1, 13-Feb-2020
Document Number: 86150
9
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
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