VLMBG3100 [VISHAY]
Visible LED, SURFACE-MOUNT/AXIAL LED LAMP,BLUE-GREEN,CLEAR,LED-8D;
| 型号： | VLMBG3100 |
| 厂家： | 
VISHAY |
| 描述： | Visible LED, SURFACE-MOUNT/AXIAL LED LAMP,BLUE-GREEN,CLEAR,LED-8D |
| 文件： | 总11页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VLMB/BG/TG31..
Vishay Semiconductors
High Intensity SMD LED
FEATURES
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
equipment
e3
• EIA and ICE standard package
• Compatible with IR Reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020B
• Available in 8 mm tape
• Low profile package
19225
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
/I
≤ 1.6
Vmax Vmin
• Lead (Pb)-free device-RoHs compliant
• Preconditioning: acc. to JEDEC Level 2a
•
ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D,
Method 3015.7
DESCRIPTION
APPLICATIONS
This device has been designed to meet the increasing
demand for InGaN technology.
• Automotive: Backlighting in dashboards and
switches
The package of the VLMB/BG/TG31.. is the PLCC-2.
• Telecommunication: Indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video equip-
ment
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY ANGLE OF HALF INTENSITY ( ϕ)
TECHNOLOGY
VLMB3140-GS08
Blue, IV > 45 mcd
Blue, IV > 45 mcd
60°
60°
60°
60°
60°
60°
InGaN on SiC
InGaN on SiC
InGaN on SiC
InGaN on SiC
InGaN on SiC
InGaN on SiC
VLMB3140-GS18
VLMBG3100-GS08
VLMBG3100-GS18
VLMTG3100-GS08
VLMTG3100-GS18
Blue Green, IV > 140 mcd
Blue Green, IV > 140 mcd
True Green, IV > 180 mcd
True Green, IV > 180 mcd
Document Number 81242
Rev. 1.0, 20-Jan-06
www.vishay.com
1
VLMB/BG/TG31..
Vishay Semiconductor
1)
ABSOLUTE MAXIMUM RATINGS VLMB3140, VLMBG3100, VLMTG3100
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage2)
VR
5
V
DC Forward current
Tamb ≤ 80 °C
tp ≤ 10 µs
IF
IFSM
PV
20
0.2
mA
A
Surge forward current
Power dissipation
84
mW
°C
Junction temperature
Tj
110
Operating temperature range
Storage temperature range
Tamb
Tstg
RthJA
- 40 to + 100
- 40 to + 100
350
°C
°C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
K/W
Note:
1)
T
= 25 °C unless otherwise specified
amb
2) Driving LED in reverse direction is suitable for short term application
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS BLUE VLMB3140
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP
MAX
UNIT
Luminous intensity2)
Dominant wavelength
IF = 20 mA
IV
45
100
mcd
nm
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
λd
λp
462
470
464
60
476
Peak wavelength
nm
Angle of half intensity
Forward voltage
ϕ
deg
V
VF
VR
TCV
TCI
3
4.2
Reverse voltage
I
R = 10 µA
5
V
Temperature coefficient of VF
Temperature coefficient of IV
IF = 20 mA
IF = 20 mA
- 4
mV/K
%/K
- 0.4
Note:
1)
T
= 25 °C unless otherwise specified
amb
2) in one Packing Unit IVmax/IVmin ≤ 1.6
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS BLUE GREEN VLMBG3100
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP
MAX
UNIT
Luminous intensity2)
Dominant wavelength
IF = 20 mA
IV
140
220
mcd
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
λd
λp
496
505
502
60
514
nm
nm
deg
V
Peak wavelength
Angle of half intensity
Forward voltage
ϕ
VF
VR
TCV
TCI
3
4.2
Reverse voltage
I
R = 10 µA
5
V
Temperature coefficient of VF
Temperature coefficient of IV
IF = 20 mA
IF = 20 mA
- 4
mV/K
%/K
- 0.2
Note:
1)
T
= 25 °C unless otherwise specified
amb
2) in one Packing Unit IVmax/IVmin ≤ 1.6
www.vishay.com
2
Document Number 81242
Rev. 1.0, 20-Jan-06
VLMB/BG/TG31..
Vishay Semiconductors
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TRUE GREEN VLMTG3100
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP
MAX
UNIT
Luminous intensity2)
Dominant wavelength
IF = 20 mA
IV
180
300
mcd
IF = 20 mA
λd
λp
515
528
522
60
541
nm
nm
deg
V
Peak wavelength
IF = 20 mA
Angle of half intensity
Forward voltage
IF = 20 mA
IF = 20 mA
ϕ
VF
VR
TCV
TCI
3
4.2
Reverse voltage
I
R = 10 µA
5
V
Temperature coefficient of VF
Temperature coefficient of IV
IF = 20 mA
IF = 20 mA
- 3.5
- 0.3
mV/K
%/K
Note:
1)
T
= 25 °C unless otherwise specified
amb
2) in one Packing Unit IVmax/IVmin ≤ 1.6
CROSSING TABLE
LUMINOUS INTENSITY CLASSIFICATION
VISHAY
OSRAM
GROUP
LIGHT INTENSITY [MCD]
VLMB3140
VLMBG3100
VLMTG3100
LBT673
LVT673
LTT673
STANDARD
OPTIONAL
MIN
45
MAX
56
1
2
1
2
1
2
1
2
1
2
1
2
P
Q
R
S
T
56
71
71
90
90
112
140
180
224
280
355
450
560
710
112
140
180
224
280
355
450
560
COLOR CLASSIFICATION
GROUP
BLUE
DOM. WAVELENGTH (NM)
MIN.
458
462
466
470
474
MAX.
464
468
472
476
480
U
2
3
4
5
6
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of 11 %.
The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
COLOR CLASSIFICATION
GROUP
BLUE GREEN
TRUE GREEN
In order to ensure availability, single brightness groups will not be or-
derable.
DOM. WAVELENGTH (NM)
MAX. MIN.
502 515
MIN.
496
500
504
508
MAX.
523
In a similar manner for colors where wavelength groups are mea-
sured and binned, single wavelength groups will be shipped on any
one reel.
3
4
5
6
506
510
514
521
527
533
529
535
In order to ensure availability, single wavelength groups will not be
orderable.
541
Document Number 81242
Rev. 1.0, 20-Jan-06
www.vishay.com
3
VLMB/BG/TG31..
Vishay Semiconductor
TYPICAL CHARACTERISTICS
T
= 25 °C unless otherwise specified
amb
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
20
15
10
5
Blue
0
400 420 440 460 480 500 520 540 560
λ - W avelength (nm)
0
10 20 30 40 50 60 70 80 90 100 110
– Ambient Temperature (°C)
16069
16806
T
amb
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Figure 4. Relative Intensity vs. Wavelength
1.2
100
90
80
70
60
50
40
30
20
10
0
Blue Green
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
420 440 460 480 500 520 540 560 580 600
2.0
2.5
3.0
3.5
4.0
4.5
5.0
16070
19918
VF– Forward Voltage (V)
λ - Wavelength (nm)
Figure 2. Forward Current vs. Forward Voltage
Figure 5. Relative Intensity vs. Wavelength
10
1
1.2
True Green
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
0.01
1
10
100
460 480 500 520 540 560 580 600 620
λ - Wavelength (nm)
16194
I
- Forward Current (mA)
16068
F
Figure 3. Specific Luminous Flux vs. Forward Current
Figure 6. Relative Intensity vs. Wavelength
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4
Document Number 81242
Rev. 1.0, 20-Jan-06
VLMB/BG/TG31..
Vishay Semiconductors
0°
10°
20°
30°
40°
476
474
472
470
468
Blue
1.0
0.9
50°
60°
0.8
70°
80°
0.7
0.6
0.6 0.4 0.2
0
0.2
0.4
0
10
20
I - Forward Current (mA)
F
30
40
50
95 10319
16814
Figure 7. Dominant Wavelength vs. Forward Current
Figure 10. Relative Luminous Intensity
515
Blue Green
513
511
509
507
505
503
501
0
10
20
30
40
50
16813
I
- Forward Current (mA)
F
Figure 8. Dominant Wavelength vs. Forward Current
538
536
True Green
534
532
530
528
526
524
0
10
20
I - Forward Current (mA)
F
30
40
50
16812
Figure 9. Dominant Wavelength vs. Forward Current
Document Number 81242
Rev. 1.0, 20-Jan-06
www.vishay.com
5
VLMB/BG/TG31..
Vishay Semiconductors
PACKAGE DIMENSIONS IN MM
3.5 0.2
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
C
A
4
1.6 (1.9)
Ø
2.4
Dimensions: IR Reflow and Vaporphase
(Wave Soldering)
+ 0.15
3
Drawing-No. : 6.541-5025.01-4
Issue: 8; 22.11.05
95 11314-1
METHOD OF TAPING / POLARITY AND TAPE
AND REEL
TAPING OF VLM.3..
3.5
2.2
2.0
3.1
Anode
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component inser-
tion. The blister tape is a plastic strip with impressed
component cavities, covered by a top tape.
5.75
5.25
4.0
3.6
8.3
7.7
3.6
3.4
1.85
1.65
0.25
1.6
1.4
4.1
3.9
4.1
3.9
2.05
1.95
Adhesive Tape
94 8668
Tape dimensions in mm for PLCC-2
Blister Tape
94 8670
Component Cavity
www.vishay.com
6
Document Number 81242
Rev. 1.0, 20-Jan-06
VLMB/BG/TG31..
Vishay Semiconductors
REEL PACKAGE DIMENSION IN MM FOR SMD
LEDS, TAPE OPTION GS08 (= 1500 PCS.)
10.0
9.0
120°
4.5
3.5
13.00
12.75
2.5
1.5
63.5
60.5
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
14.4 max.
180
178
Quantity
94 8665
Reel dimensions - GS08
REEL PACKAGE DIMENSION IN MM FOR SMD
LEDS, TAPE OPTION GS18 (= 8000 PCS.)
PREFERED
10.4
8.4
120°
4.5
3.5
13.00
12.75
2.5
1.5
62.5
60.0
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
14.4 max.
321
329
Quantity
18857
Reel dimensions - GS18
Document Number 81242
Rev. 1.0, 20-Jan-06
www.vishay.com
7
VLMB/BG/TG31..
Vishay Semiconductors
SOLDERING PROFILE
BARCODE-PRODUCT-LABEL
IR Reflow Soldering Profile for lead free soldering
Preconditioning acc. to JEDEC Level 2a
300
250
200
150
100
50
106
max. 260 °C
245 °C
225555°C
240 °C
217 °C
A
H
VISHAY
max. 30 s
max. 100 s
37
max. 120 s
19919
B
C
D
E
F
G
max. Ramp Down 6 °C/s
max. Ramp Up 3 °C/s
0
0
50
100
150
200
250
300
Time (s)
A) Type of component
max. 2 cycles allowed
19885
B) Manufacturing Plant
C) SEL - Selection Code (Bin):
Vishay Leadfree Reflow Soldering Profile
(acc. to J-STD-020B)
e.g.: R2 = Code for Luminous Intensity Group
3 = Code for Color Group
D) Date Code year/week
E) Day Code (e.g. 3: Wednesday)
F) Batch No.
948626-1
TTW Soldering (acc. to CECC00802)
300
250
5 s
Lead Temperature
second
G) Total quantity
235°...260 °C
first wave
full line: typical
dotted line: process limits
wave
H) Company Code
200
150
100
ca. 2 K/s
ca. 200 K/s
100°...130 °C
ca. 5 K/s
2 K/s
50
0
forced cooling
0
100
Time (s)
250
50
150
200
Double wave soldering of opto devices (all packages)
www.vishay.com
8
Document Number 81242
Rev. 1.0, 20-Jan-06
VLMB/BG/TG31..
Vishay Semiconductors
DRY PACKING
L
E V E L
The reel is packed in an anti-humidity bag to protect the
devices from absorbing moisture during transportation
and storage.
CAUTION
This bag contains
MOISTURE –SENSITIVE DEVICES
2a
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
Aluminium bag
3. Devices require baking before mounting if:
a)
b)
Humidity Indicator Card is >10% when read at 23°C + 5°C or
2a or 2b is not met.
Label
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
or
or
96 hours at 60 5oCand <5%RH
24 hours at 100 5°C
For all device containers
Not suitable for reels or tubes
Bag Seal Date: ______________________________
(If blank, see bar code label)
Reel
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
15973
Example of JESD22-A112 Level 2a label
ESD PRECAUTION
Proper storage and handling procedures should be fol-
lowed to prevent ESD damage to the devices especially
when they are removed from the Antistatic Shielding
Bag. Electro-Static Sensitive Devices warning labels are
on the packaging.
FINAL PACKING
The sealed reel is packed into a cardboard box. A sec-
ondary cardboard box is used for shipping purposes.
RECOMMENDED METHOD OF STORAGE
VISHAY SEMICONDUCTORS STANDARD
BAR-CODE LABELS
The Vishay Semiconductors standard bar-code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
Dry box storage is recommended as soon as the alumin-
ium bag has been opened to prevent moisture absorp-
tion. The following conditions should be observed, if dry
boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 hours under these conditions mois-
ture content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 hours at 40 °C + 5 °C/ - 0 °C and < 5 % RH
(dry air/ nitrogen) or
96 hours at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 hours at 100 °C + 5 °C not suitable for reel
or tubes.
An EIA JEDEC Standard JESD22-A112 Level 2a label
is included on all dry bags.
Document Number 81242
Rev. 1.0, 20-Jan-06
www.vishay.com
9
VLMB/BG/TG31..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
10
Document Number 81242
Rev. 1.0, 20-Jan-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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