VQ1004P [VISHAY]
N-Channel 60-V (D-S) Single and Quad MOSFETs; N通道60 -V （ D- S）单和四的MOSFET
| 型号： | VQ1004P |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) Single and Quad MOSFETs |
| 文件： | 总5页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6660, VQ1004J/P
Vishay Siliconix
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)
VGS(th) (V)
ID (A)
2N6660
3 @ V = 10 V
0.8 to 2
1.1
GS
60
VQ1004J/P
3.5 @ V = 10 V
GS
0.8 to 2.5
0.46
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 1.3 W
D Low Threshold: 1.7 V
D Low Offset Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 8 ns
D Low Input and Output Leakage
D Battery Operated Systems
D Solid-State Relays
Dual-In-Line
Device Marking
Top View
TO-205AD
(TO-39)
D
S
D
S
1
4
1
2
3
4
5
6
7
14
13
12
11
10
9
N
N
1
4
VQ1004J
“S” fllxxyy
S
G
1
G
Device Marking
Side View
4
1
2
NC
NC
VQ1004P
“S” fllxxyy
2N6660
“S” fllxxyy
G
2
S
2
D
2
G
3
3
S
N
N
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
3
D
3
G
D
8
Top View
2N6660
Top View
Plastic: VQ1004J
Sidebraze: VQ1004P
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Single
Total Quad
VQ1004J VQ1004P VQ1004J/P
Parameter
Symbol 2N6660
Unit
Drain-Source Voltage
Gate-Source Voltage
V
60
"20
1.1
0.8
3
60
"30
0.46
0.26
2
60
"20
"0.46
0.26
2
DS
GS
V
V
T = 25_C
C
Continuous Drain Current
I
D
(T = 150_C)
T = 100_C
C
J
A
a
Pulsed Drain Current
I
DM
T = 25_C
6.25
2.5
170
20
1.3
1.3
2
C
Power Dissipation
P
W
D
T = 100_C
C
0.52
0.96
0.52
0.96
0.8
62.5
b
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
R
R
thJA
_C/W
_C
thJC
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-1
2N6660, VQ1004J/P
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N6660
VQ1004J/P
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
V
= 0 V, I = 10 mA
75
60
60
(BR)DSS
GS
D
V
Gate-Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 1 mA
1.7
0.8
2
0.8
2.5
GS(th)
DS
GS D
V
= 0 V, V = "15 V
"100
"500
10
"100
"500
DS
GS
I
nA
GSS
T
C
= 125_C
V
= 60 V, V = 0 V
DS
DS
DS
GS
V
V
= 35 V, V = 0 V
GS
= 48 V, V = 0 V
1
GS
Zero Gate
Voltage Drain Current
I
mA
DSS
T
C
= 125_C
500
500
V
= 28 V, V = 0 V
DS
GS
T
C
= 125_C
b
On-State Drain Current
I
V
= 10 V, V = 10 V
DS GS
3
1.5
1.5
A
D(on)
d
V
= 5 V, I = 0.3 A
D
2
5
3
5
GS
b
1.3
2.4
350
3.5
4.9
V
= 10 V, I = 1 A
Drain-Source On-Resistance
r
W
GS
D
DS(on)
d
T
C
= 125_C
= 10 V, I = 0.5 A
4.2
b
Forward Transconductance
g
fs
V
V
170
170
DS
DS
D
mS
V
Common Source
Output Conductance
g
= 10 V, I = 0.1 A
1
os
SD
D
b
Diode Forward Voltage
V
I
S
= 0.99 A, V = 0 V
0.8
GS
Dynamic
Input Capacitance
Output Capacitance
C
35
25
7
50
40
10
40
60
50
10
iss
C
oss
V
= 24 V, V = 0 V
GS
f = 1 MHz
DS
pF
Reverse Transfer Capacitance
Drain-Source Capacitance
C
rss
C
30
ds
Switchingc
Turn-On Time
Turn-Off Time
t
8
10
10
10
10
V
= 25 V, R = 23 W
GEN
R = 25 W
G
ON
DD
^ 1 A, V
L
ns
I
D
= 10 V
t
8.5
OFF
Notes
a. For DESIGN AID ONLY, not subject to production testing.
VNDQ06
b. Pulse test: PW v80 ms duty cycle v1%.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC on 2N6660.
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-2
2N6660, VQ1004J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
2.0
1.6
1.2
0.8
0.4
0
100
80
60
40
20
0
V
= 10 V
GS
8 V
V
= 10 V
GS
2.8 V
7 V
6 V
2.6 V
5 V
4 V
2.4 V
2.2 V
2.0 V
1.8 V
3 V
2 V
0
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
1.0
0.8
0.6
0.4
0.2
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1.0 A
TJ = –55_C
25_C
0.5 A
V
= 15 V
DS
125_C
ID = 0.1 A
2
4
6
8
10
0
4
8
12
16
20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
On-Resistance vs. Drain Current
2.5
2.25
2.00
1.75
1.50
1.25
1.00
0.75
V
= 10 V
GS
I
= 1.0 A
D
2.0
1.5
1.0
0.5
0
0.2 A
V
= 10 V
GS
0.50
0.4
0.8
1.2
1.6
2.0
–50
–10
30
70
110
150
ID – Drain Current (A)
TJ – Junction Temperature (_C)
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-3
2N6660, VQ1004J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Threshold Region
Capacitance
10
120
100
80
60
40
20
0
V = 0 V
GS
V
= 5 V
DS
f = 1 MHz
TJ = 150_C
1
25_C
0.1
0.01
C
iss
C
oss
C
rss
125_C
–55_C
0.5
1.0
1.5
2.0
0
10
20
30
40
50
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
15.0
12.5
10.0
7.5
5.0
2.5
0
100
50
VDD = 25 V
G = 25 W
VGS = 0 to 10 V
I
= 1.0 A
D
R
VDS = 30 V
20
10
5
48 V
t
d(off)
t
t
r
d(on)
t
f
2
1
0
100
200
300
400
500
600
0.1
1
10
Qg – Total Gate Charge (pC)
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD)
1.0
Duty Cycle = 0.5
0.2
0.1
Notes:
Single Pulse
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
0.01
1. Duty Cycle, D =
2. Per Unit Base = R
= 20_C/W
thJC
(t)
DM thJC
3. T – T = P
Z
JM
C
0.01
0.1
1.0
10
100
1 K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-4
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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