VS-10CVH02HM3/I [VISHAY]
DIODE GEN PURPOSE 200V SLIMDPAK;
| 型号： | VS-10CVH02HM3/I |
| 厂家： | 
VISHAY |
| 描述： | DIODE GEN PURPOSE 200V SLIMDPAK |
| 文件： | 总7页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-10CVH02HM3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 2 x 5 A FRED Pt®
FEATURES
• Hyperfast recovery time
eSMP® Series
Base
common
cathode
• 175 °C max. operating junction temperature
• Low forward voltage drop reduced Qrr and soft
recovery
4
4
• Low leakage current
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Polyimide passivation for high reliability
standard
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
2
1
2
Common
cathode
3
1
3
Anode
Anode
SlimDPAK (TO-252AE)
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3
D
3D Models
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers designed with
optimized performance of forward voltage drop, hyper fast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5 A
200 V
0.74 V
16 ns
VR
VF at IF
trr (typ.)
TJ max.
175 °C
Package
SlimDPAK (TO-252AE)
Common cathode
Circuit configuration
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
200
V
per leg
Average rectified forward current
per device
5
10
IF(AV)
TC = 165 °C
TJ = 25 °C, 10 ms sine pulse wave
A
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
IFSM
100
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
Breakdown voltage, blocking voltage
V
BR, VR
IR = 100 μA
200
-
0.90
1.0
0.74
0.85
-
-
IF = 5 A
-
-
-
-
-
-
-
1.04
IF = 10 A
1.17
0.84
1.05
4
V
Forward voltage
VF
IF = 5 A, TJ = 150 °C
IF = 10 A, TJ = 150 °C
VR = VR rated
Reverse leakage current per leg
Junction capacitance per leg
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 200 V
-
80
CT
17
-
Revision: 11-Jan-2021
Document Number: 95668
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH02HM3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, IRR = 0.25 A
TJ = 25 °C
MIN.
TYP.
16
-
MAX. UNITS
-
-
-
-
-
-
-
-
-
25
ns
-
Reverse recovery time
trr
21
30
2.5
4
TJ = 125 °C
-
IF = 5 A
dIF/dt = 200 A/μs
TJ = 25 °C
-
Peak recovery current
IRRM
Qrr
A
TJ = 125 °C
-
VR = 160 V
TJ = 25 °C
25
60
-
Reverse recovery charge
nC
-
TJ = 125 °C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX. UNITS
Maximum junction and storage temperature range TJ, TStg
-55
175
90
°C
(1)(2)
(3)
Thermal resistance, junction to ambient
Thermal resistance, junction to mount, per diode
Marking device
RthJA
-
-
73
°C/W
RthJM
2.1
2.5
Case style SlimDPAK (TO-252AE)
10CVH02
Notes
(1)
(2)
(3)
The heat generated must be less than thermal conductivity from junction to ambient; dPD/dTJ < 1RthJA
Free air, mounted or recommended copper pad area; thermal resistance RthJA - junction to ambient
Mounted on infinite heatsink
100
10
1
100
10
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
1
TJ = 175 °C
TJ = -40 °C
0.1
0.01
0.001
0.0001
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
25 °C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 11-Jan-2021
Document Number: 95668
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH02HM3
Vishay Semiconductors
www.vishay.com
100
10
0
25
50
75 100 125 150 175 200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
100
RthJA
10
1
RthJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
7
200
180
160
140
120
100
80
RthJC = 2.1°C/W
6
5
4
3
2
1
0
RMS limit
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RthJA = 73 °C/W
60
40
DC
20
See note (1)
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 11-Jan-2021
Document Number: 95668
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH02HM3
Vishay Semiconductors
www.vishay.com
45
40
35
30
25
20
15
10
5
120
100
80
60
40
20
0
125 °C
125 °C
25 °C
25 °C
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
di(rec)M/dt
0.75 IRRM
diF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) diF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 11-Jan-2021
Document Number: 95668
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CVH02HM3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
10
C
V
H
02
H
M3
1
2
3
4
5
6
7
8
1
-
-
-
Vishay Semiconductors product
Current rating (10 = 10 A)
Circuit configuration:
2
3
C = common cathode
V = SlimDPAK
Process type,
H = hyper fast recovery
-
-
4
5
-
-
-
Voltage code (02 = 200 V)
6
7
8
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-10CVH02HM3/I
4500
4500
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96081
Part marking information
Packaging information
www.vishay.com/doc?96085
www.vishay.com/doc?88869
Revision: 11-Jan-2021
Document Number: 95668
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
SlimDPAK
DIMENSIONS in inches (millimeters)
SlimDPAK
(1.40)
(1.20)
0.055
0.047
(0.41)
(0.25)
0.016
0.010
(6.32)
(6.08)
0.249
0.239
(0.70)
(0.30)
0.028
0.012
(6.72)
(6.48)
0.265
0.255
(9.40)
(8.60)
0.370
0.339
(0.20)
(0.00)
(1.40)
(1.00)
0.008
0.000
0.055
0.039
0.090
(2.29)
NOM.
0.180
(4.57)
NOM.
Mounting Pad Layout
0.240
MIN.
(5.70)
(5.30)
0.224
0.209
(6.10)
0.205
(5.20)
0.235
(5.97)
NOM.
MIN.
0.386
(9.80)
REF.
0.075
(1.90)
MIN.
MIN.
(0.90)
(0.70)
0.035
0.028
0.090
(2.29)
0.055
(1.40)
NOM.
Revision: 14-Mar-17
Document Number: 96081
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
相关型号：
VS-10CWH02FN-M3
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode
VISHAY
VS-10CWH02FNTR-M3
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode
VISHAY
VS-10CWH02FNTRL-M3
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode
VISHAY
VS-10ETF02PBF
VS-10ETF0.PbF Series, VS-10ETF0.-M3 Series Fast Soft Recovery Rectifier Diode, 10 A
VISHAY
©2020 ICPDF网 联系我们和版权申明