VS-12CTQ035STRL-M3 [VISHAY]
DIODE SCHOTTKY 35V 6A D2PAK;
| 型号： | VS-12CTQ035STRL-M3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE SCHOTTKY 35V 6A D2PAK 二极管 |
| 文件： | 总8页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 6 A
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
2
• High
purity,
high
temperature
epoxy
1
encapsulation for enhanced mechanical strength and
moisture resistance
1
3
2
D2PAK (TO-263AB)
3
TO-262AA
• High frequency operation
Base
common
cathode
Base
common
cathode
• Guard ring for enhanced ruggedness and long term
reliability
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
2
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
VS-12CTQ...-1-M3
VS-12CTQ...S-M3
DESCRIPTION
The VS-12CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 6 A
VR
35 V, 40 V, 45 V
0.53 V
VF at IF
RM max.
I
7.0 mA at 125 °C
175 °C
TJ max.
EAS
8 mJ
Package
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
12
UNITS
IF(AV)
VRRM
IFSM
VF
Rectangular waveform
A
V
Range
35 to 45
690
tp = 5 μs sine
6 Apk, TJ = 125 °C (per leg)
Range
A
0.53
V
TJ
-55 to +175
°C
VOLTAGE RATINGS
VS-12CTQ035S-M3
VS-12CTQ040S-M3
VS-12CTQ045S-M3
PARAMETER
SYMBOL
UNITS
VS-12CTQ035-1-M3 VS-12CTQ040-1-M3 VS-12CTQ045-1-M3
Maximum DC reverse voltage
VR
35
40
45
V
Maximum working peak reverse voltage
VRWM
Revision: 27-Oct-17
Document Number: 94924
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
per leg
6
Maximum average forward
current, see fig. 5
IF(AV)
50 % duty cycle at TC = 160 °C, rectangular waveform
A
per device
12
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
690
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
EAS
IAR
A
140
8
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.20
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.60
0.73
0.53
0.64
0.8
UNITS
6 A
TJ = 25 °C
TJ = 125 °C
12 A
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
6 A
12 A
TJ = 25 °C
Maximum reverse leakage current per leg
See fig. 2
(1)
IRM
VR = Rated VR
TJ = 125 °C
mA
7.0
Threshold voltage
VF(TO)
rt
0.35
18.23
400
V
TJ = TJ maximum
Forward slope resistance
m
pF
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
LS
8.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to 175
°C
Maximum thermal resistance,
junction to case per leg
DC operation
See fig. 4
3.50
1.75
0.50
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
2
g
Approximate weight
Mounting torque
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
12 (10)
12CTQ035S
Case style D2PAK (TO-263AB)
Case style TO-262AA
12CTQ040S
12CTQ045S
12CTQ035-1
12CTQ040-1
12CTQ045-1
Marking device
Revision: 27-Oct-17
Document Number: 94924
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
100
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
10
0.1
TJ = 75 °C
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
1
0
5
10 15 20 25 30 35 40 45
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
0.1
0.01
t1
t2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 27-Oct-17
Document Number: 94924
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
175
170
165
160
155
150
5.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
DC
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
4
0
8
10
0
2
4
6
8
10
2
6
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 27-Oct-17
Document Number: 94924
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
C
T
Q
045
S
TRL -M3
1
2
3
4
5
6
7
8
9
1
-
-
-
-
-
-
-
Vishay Semiconductors product
2
3
4
5
6
7
Current rating (12 A)
Circuit configuration: C = common cathode
T = TO-220
Schottky “Q” series
035 = 35 V
040 = 40 V
045 = 45 V
Voltage ratings
S = D2PAK (TO-263AB)
-1 = TO-262AA
8
9
-
None = tube
TRL = tape and reel (left oriented - for D2PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D2PAK (TO-263AB) only)
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
-
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-12CTQ035S-M3
50
800
800
50
1000
800
VS-12CTQ035STRR-M3
VS-12CTQ035STRL-M3
VS-12CTQ035-1-M3
800
13" diameter reel
1000
1000
800
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
VS-12CTQ040S-M3
50
VS-12CTQ040STRR-M3
VS-12CTQ040STRL-M3
VS-12CTQ040-1-M3
800
800
50
800
13" diameter reel
1000
1000
800
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
VS-12CTQ045S-M3
50
VS-12CTQ045STRR-M3
VS-12CTQ045STRL-M3
VS-12CTQ045-1-M3
800
800
50
800
13" diameter reel
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
D2PAK (TO-263AB)
www.vishay.com/doc?96164
Dimensions
TO-262AA
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
D2PAK (TO-263AB)
TO-262AA
Part marking information
Packaging information
Revision: 27-Oct-17
Document Number: 94924
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.36
0.132
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Revision: 11-Jul-2019
Document Number: 95419
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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