VS-12TQ045-N3 [VISHAY]
Schottky Rectifier, 15 A;型号: | VS-12TQ045-N3 |
厂家: | VISHAY |
描述: | Schottky Rectifier, 15 A |
文件: | 总7页 (文件大小:167K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 15 A
FEATURES
Base
• 150 °C TJ operation
cathode
2
• Very low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
1
3
TO-220AC
Cathode Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified according to JEDEC-JESD47
Package
TO-220AC
15 A
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
IF(AV)
VR
35 V, 40 V, 45 V
0.50 V
VF at IF
DESCRIPTION
The VS-12TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
I
RM max.
70 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Single die
16 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
15
UNITS
Rectangular waveform
Range
A
V
35 to 45
990
tp = 5 μs sine
15 Apk, TJ = 125 °C
Range
A
VF
0.50
V
TJ
- 55 to 150
°C
VOLTAGE RATINGS
VS-
VS-
VS-
VS-
VS-
VS-
PARAMETER
SYMBOL
UNITS
12TQ035PbF 12TQ035-N3 12TQ040PbF 12TQ040-N3 12TQ045PbF 12TQ045-N3
Maximum DC reverse
voltage
VR
35
35
40
40
45
45
V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 120 °C, rectangular waveform
VALUES UNITS
Maximum average forward current
See fig. 5
IF(AV)
15
A
Maximum peak one cycle non-repetitive
surge current
5 µs sine or 3 µs rect. pulse
990
Following any rated load
condition and with rated
IFSM
VRRM applied
10 ms sine or 6 ms rect. pulse
250
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
16
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2.4
Revision: 25-Aug-11
Document Number: 94137
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.56
0.71
0.50
0.64
1.75
70
UNITS
15 A
TJ = 25 °C
30 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
15 A
TJ = 125 °C
30 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
(1)
IRM
V
R = Rated VR
mA
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
900
pF
nH
8.0
Maximum voltage rate of change
dV/dt
10 000
V/µs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to case
DC operation
See fig. 4
RthJC
RthCS
2.0
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.50
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf·in)
Mounting torque
Marking device
12TQ035
Case style TO-220AC
12TQ040
12TQ045
Revision: 25-Aug-11
Document Number: 94137
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
1000
1000
100
10
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
1
0.1
1
0.01
0.001
TJ = 25 °C
0.1
0
5
10 15 20 25 30 35 40 45
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t1
t2
Notes:
Single pulse
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 25-Aug-11
Document Number: 94137
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
155
145
135
125
115
12
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
12TQ
RthJC (DC) = 2.0 °C/W
10
8
RMS limit
6
DC
4
DC
2
0
0
2
4
6
8
10 12 14 16 18 20 22
0
4
8
12
16
20
24
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 25-Aug-11
Document Number: 94137
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 12
T
Q
045 PbF
1
2
3
4
5
6
1
2
3
-
-
-
Vishay Semiconductors product
Current rating (15 A)
Package:
T = TO-220
4
5
6
-
-
-
Schottky “Q” series
Voltage ratings
035 = 35 V
040 = 40 V
045 = 45 V
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-12TQ035PbF
VS-12TQ035-N3
VS-12TQ040PbF
VS-12TQ040-N3
VS-12TQ045PbF
VS-12TQ045-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
50
50
50
50
50
50
1000
1000
1000
1000
1000
1000
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95221
TO-220AC PbF
TO-220AC -N3
www.vishay.com/doc?95224
www.vishay.com/doc?95068
Part marking information
Revision: 25-Aug-11
Document Number: 94137
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
相关型号:
VS-12TQ045SHM3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY
VS-12TQ045STRLHM3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY
VS-12TQ045STRLPBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VISHAY
VS-12TQ045STRR-M3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY
VS-12TTS08-M3
Silicon Controlled Rectifier, 12.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB,
VISHAY
©2020 ICPDF网 联系我们和版权申明