VS-15ETH06PBF [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | VS-15ETH06PBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2 超快速恢复二极管 局域网 |
| 文件： | 总9页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A Fred Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
2
2
• 175 °C operating junction temperature
3
3
• Low leakage current
1
1
• Single die center tap module
• Fully isolated package (VINS = 2500 VRMS
• UL E78996 approved
TO-220 FULL-PAK
TO-220AC
)
Base
cathode
2
2
Available
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
3
1
3
Cathode
Anode
Cathode
Anode
DESCRIPTION / APPLICATIONS
VS-15ETH06PbF
VS-15ETH06-N3
VS-15ETH06FPPbF
VS-15ETH06FP-N3
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
PRODUCT SUMMARY
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Package
TO-220AC, TO-220FP
IF(AV)
15 A
600 V
VR
VF at IF
1.3 V
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
t
rr typ.
22 ns
TJ max.
175 °C
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
600
V
TC = 140 °C
C = 80 °C (FULL-PAK)
Average rectified forward current
Non-repetitive peak surge current
IF(AV)
15
T
TJ = 25 °C
120
180
A
IFSM
TJ = 25 °C (FULL-PAK)
Peak repetitive forward current
IFM
30
Operating junction and storage temperatures
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX. UNITS
Breakdown voltage, blocking voltage
V
BR, VR
IR = 100 μA
IF = 15 A
600
-
-
-
-
-
-
-
1.8
1.3
0.2
30
2.2
1.6
50
500
-
V
Forward voltage
VF
IF = 15 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
IR
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
20
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 13-May-16
Document Number: 94002
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
-
-
-
22
30
35
-
28
Reverse recovery time
trr
ns
29
TJ = 125 °C
75
-
IF = 15 A
TJ = 25 °C
3.5
7
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
A
-
VR = 390 V
TJ = 25 °C
57
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
300
51
-
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
-
ns
A
IF = 15 A
IRRM
Qrr
TJ = 125 °C
dIF/dt = 800 A/μs
20
-
VR = 390 V
580
-
nC
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
-
-
1.0
3.0
1.3
3.5
Thermal resistance,
junction to case
RthJC
(FULL-PAK)
Thermal resistance,
junction to ambient per leg
°C/W
RthJA
RthCS
Typical socket mount
-
-
-
70
-
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
15ETH06
Case style TO-220 FULL-PAK
15ETH06FP
100
10
1
1000
100
TJ = 175 °C
TJ = 150 °C
10
1
TJ = 125 °C
TJ = 175 °C
TJ = 100 °C
TJ = 150 °C
TJ = 25 °C
0.1
TJ = 25 °C
0.01
0.001
0
0
0.5
1.0
1.5
2.0
2.5
3.0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 13-May-16
Document Number: 94002
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
Single pulse
(thermal resistance)
.
0.00001
0.0001
0.001
0.01
0.1 1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
0.01
t2
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t1/t2
Single pulse
(thermal resistance)
.
2. Peak TJ = PDM x ZthJC + TC
.
0.00001
0.0001
0.001
0.01
0.1
1
100
10
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
Revision: 13-May-16
Document Number: 94002
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
120
110
35
30
25
20
15
10
5
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Square wave (D = 0.50)
80 % rated Vr applied
DC
See note (1)
0
0
5
10
15
20
25
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 8 - Forward Power Loss Characteristics
100
80
60
40
20
0
180
IF = 30 A
IF = 15 A
160
140
120
100
80
DC
Square wave (D = 0.50)
80 % rated Vr applied
60
40
VR = 390 V
TJ = 125 °C
TJ = 25 °C
20
See note (1)
0
100
1000
0
4
8
12
16
20
24
dIF/dt (A/µs)
IF(AV) - Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
1000
VR = 390 V
TJ = 125 °C
TJ = 25 °C
800
IF = 30 A
IF = 15 A
600
400
200
0
100
1000
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 13-May-16
Document Number: 94002
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 13-May-16
Document Number: 94002
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
15
E
T
H
06
FP PbF
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (15 = 15 A)
E = single diode
2
3
4
5
6
7
T = TO-220, D2PAK
H = hyperfast recovery
Voltage rating (06 = 600 V)
None = TO-220AC
FP = TO-220 FULL-PAK
Environmental digit:
8
-
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-15ETH06PbF
VS-15ETH06-N3
VS-15ETH06FPPbF
VS-15ETH06FP-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
50
50
50
50
1000
1000
1000
1000
LINKS TO RELATED DOCUMENTS
TO-220AC
www.vishay.com/doc?95221
Dimensions
TO-220FP
www.vishay.com/doc?95005
www.vishay.com/doc?95224
www.vishay.com/doc?95068
www.vishay.com/doc?95009
www.vishay.com/doc?95440
TO-220ACPbF
TO-220AC-N3
Part marking information
TO-220FPPbF
TO-220FP-N3
Revision: 13-May-16
Document Number: 94002
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters
1ꢀ06
1ꢀ04
304
301
Hole Ø
208
206
307
302
7031
6091
160ꢀ
1508
1604
1504
1ꢀ°
303
301
13056
130ꢀ5
ꢀ09
ꢀ07
ꢀ061
ꢀ038
1015
10ꢀ5
2054 TYP0
TYP0
104
103
2054 TYP0
2085
2065
R ꢀ07
R ꢀ05
(2 places)
Lead assignments
Diodes
408
406
1 + 2 - Cathode
3 - Anode
5° ꢀ05°
5° ꢀ05°
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
Document Number: 95005
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
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1
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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