VS-15TQ060STRLPBF [VISHAY]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 60V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3;
VS-15TQ060STRLPBF
型号: VS-15TQ060STRLPBF
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 60V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

高功率电源 二极管
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VS-15TQ060SPbF  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 15 A  
FEATURES  
Base  
cathode  
2
• 150 °C TJ operation  
• Very low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
3
1
• Guard ring for enhanced ruggedness and long  
term reliability  
N/C  
Anode  
D2PAK  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRODUCT SUMMARY  
• AEC-Q101 qualified  
Package  
D2PAK  
15 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
60 V  
DESCRIPTION  
VF at IF  
0.56 V  
The VS-15TQ060SPbF Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for  
reliable operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
I
RM max.  
45 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
6 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
15  
UNITS  
Rectangular waveform  
A
V
60  
tp = 5 μs sine  
15 Apk, TJ = 125 °C  
Range  
1000  
A
VF  
0.56  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-15TQ060SPbF  
UNITS  
Maximum DC reverse voltage  
VR  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 104 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
15  
A
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1000  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
IFSM  
A
260  
6
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.50  
Revision: 22-Apr-14  
Document Number: 94143  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15TQ060SPbF  
Vishay Semiconductors  
www.vishay.com  
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
0.62  
0.82  
0.56  
0.71  
0.80  
45  
UNITS  
15 A  
TJ = 25 °C  
30 A  
Maximum forward voltage drop  
See fig. 1  
(1)  
VFM  
V
15 A  
TJ = 125 °C  
30 A  
TJ = 25 °C  
TJ = 125 °C  
Maximum reverse leakage current  
See fig. 2  
(1)  
IRM  
V
R = Rated VR  
mA  
Maximum junction capacitance  
Typical series inductance  
CT  
LS  
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C  
Measured lead to lead 5 mm from package body  
Rated VR  
720  
pF  
nH  
8.0  
Maximum voltage rate of change  
dV/dt  
10 000  
V/μs  
Note  
(1)  
Pulse width < 300 μs, duty cycle < 2 %  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
-55 to +150  
°C  
Maximum thermal resistance,   
DC operation  
RthJC  
RthCS  
3.25  
0.50  
junction to case  
See fig. 4  
°C/W  
Typical thermal resistance,   
case to heatsink  
Mounting surface, smooth and greased  
2
g
Approximate weight  
0.07  
oz.  
minimum  
maximum  
6 (5)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
12 (10)  
Case style D2PAK  
15TQ060S  
Revision: 22-Apr-14  
Document Number: 94143  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15TQ060SPbF  
Vishay Semiconductors  
www.vishay.com  
1000  
100  
10  
1000  
100  
10  
TJ = 150 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
TJ = 100 °C  
1
TJ = 75 °C  
0.1  
TJ = 50 °C  
TJ = 25 °C  
0.01  
0.001  
1
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
10  
20  
30  
40  
50  
60  
VFM - Forward Voltage Drop (V)  
VR - Reverse Voltage (V)  
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage  
Fig. 1 - Maximum Forward Voltage Drop Characteristics  
1000  
TJ = 25 °C  
100  
0
10  
20  
30  
40  
50  
60  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
D = 0.75  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
PDM  
0.1  
0.01  
t1  
t2  
Single pulse  
(thermal resistance)  
Notes:  
1. Duty factor D = t1/t2  
.
2. Peak TJ = PDM x ZthJC + TC  
.
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
Revision: 22-Apr-14  
Document Number: 94143  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15TQ060SPbF  
Vishay Semiconductors  
www.vishay.com  
150  
140  
130  
120  
110  
100  
90  
14  
12  
10  
8
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
DC  
RMS limit  
6
Square wave (D = 0.50)  
80 % rated VR applied  
4
DC  
2
See note (1)  
0
80  
0
2
4
6
8
10 12 14 16 18 20 22  
0
5
10  
15  
20  
25  
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Fig. 6 - Forward Power Loss Characteristics  
1000  
At any rated load condition  
and with rated VRRM applied  
following surge  
100  
10  
100  
10 000  
1000  
tp - Square Wave Pulse Duration (µs)  
Fig. 7 - Maximum Non-Repetitive Surge Current  
L
High-speed  
switch  
IRFP460  
D.U.T.  
Freewheel  
diode  
Rg = 25 Ω  
V
d = 25 V  
+
Current  
monitor  
40HFL40S02  
Fig. 8 - Unclamped Inductive Test Circuit  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC;  
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR  
Revision: 22-Apr-14  
Document Number: 94143  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15TQ060SPbF  
Vishay Semiconductors  
www.vishay.com  
ORDERING INFORMATION TABLE  
Device code  
VS-  
15  
T
Q
060  
S
TRL PbF  
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product  
Current rating (15 A)  
Circuit configuration: T = TO-220  
Schottky “Q” series  
Voltage rating (060 = 60 V)  
S = D2PAK  
None = tube (50 pieces)  
TRL = tape and reel (left oriented)  
TRR = tape and reel (right oriented)  
PbF = lead (Pb)-free  
8
-
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95014  
www.vishay.com/doc?95008  
www.vishay.com/doc?95032  
www.vishay.com/doc?95600  
Part marking information  
Packaging information  
SPICE model  
Revision: 22-Apr-14  
Document Number: 94143  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
D2PAK, TO-262  
DIMENSIONS - D2PAK in millimeters and inches  
Conforms to JEDEC outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
110ꢀꢀ  
MIN0  
(ꢀ0ꢁ3)  
(3)  
D
L1  
2
9065  
MIN0  
(ꢀ038)  
(D1) (3)  
Detail A  
1709ꢀ (ꢀ07ꢀ)  
150ꢀꢀ (ꢀ0625)  
H
(2)  
1
3
3081  
MIN0  
L2  
(ꢀ015)  
B
B
2032  
MIN0  
(ꢀ0ꢀ8)  
A
B
206ꢁ (ꢀ01ꢀ3)  
20ꢁ1 (ꢀ0ꢀ96)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
ꢀ0ꢀꢀꢁ M  
Base  
Metal  
ꢀ0ꢀ1ꢀ M  
M
B
A
Plating  
(ꢁ)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(ꢁ)  
c1  
(c)  
B
ꢀ° to 8°  
L3  
Seating  
plane  
Lead assignments  
A1  
Lead tip  
(b, b2)  
L
Diodes  
Lꢁ  
Detail “A”  
Rotated 9ꢀ °CW  
Scale: 8:1  
Section B - B and C - C  
Scale: None  
10 - Anode (two die)/open (one die)  
20, ꢁ0 - Cathode  
30 - Anode  
MILLIMETERS  
SYMBOL  
INCHES  
MILLIMETERS  
INCHES  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
(7)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conforms to JEDEC outline TO-263AB  
(2)  
(3)  
(4)  
(5)  
(6)  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Document Number: 95014  
Revision: 31-Mar-09  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
Outline Dimensions  
Vishay Semiconductors  
D2PAK, TO-262  
DIMENSIONS - TO-262 in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(ꢁ)  
b1, b3  
Plating  
c
M
M
B
ꢀ0ꢀ1ꢀ  
A
Lead assignments  
c1  
(ꢁ)  
Diodes  
10 - Anode (two die)/open (one die)  
20, ꢁ0 - Cathode  
30 - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
(4)  
(5)  
Controlling dimension: inches  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 95014  
Revision: 31-Mar-09  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

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VISHAY

VS-16CTQ060-1-M3

Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-262AA,

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VISHAY

VS-16CTQ060-1HM3

Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-262AA,

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VISHAY