VS-180NQ045PBF_17 [VISHAY]
High Performance Schottky Rectifier;
| 型号： | VS-180NQ045PBF_17 |
| 厂家： | 
VISHAY |
| 描述： | High Performance Schottky Rectifier |
| 文件： | 总6页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-180NQ045PbF
Vishay Semiconductors
www.vishay.com
High Performance Schottky Rectifier, 180 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
Lug terminal
anode
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
• UL approved file E222165
Base
cathode
HALF-PAK (D-67)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRIMARY CHARACTERISTICS
The VS-180NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
IF(AV)
180 A
45 V
VR
Package
HALF-PAK (D-67)
Single
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
180
UNITS
Rectangular waveform
A
V
45
tp = 5 μs sine
180 Apk, TJ = 125 °C
Range
27 000
0.63
A
VF
V
TJ
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-180NQ045PbF
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 105 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
180
A
5 μs sine or 3 μs rect. pulse
27 000
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated
load condition and with
rated VRRM applied
IFSM
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 22 A, L = 1 mH
2400
243
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
36
Revision: 08-May-17
Document Number: 94148
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180NQ045PbF
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.60
0.83
0.63
0.89
15
UNITS
180 A
TJ = 25 °C
360 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
180 A
TJ = 125 °C
360 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
IRM
VR = Rated VR
mA
600
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated VR
7700
6.0
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width = 500 μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to 150
°C
Maximum thermal resistance,
DC operation
RthJC
RthCS
0.28
0.05
junction to case
See fig. 4
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
30
g
Approximate weight
1.06
oz.
minimum
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
Mounting torque
maximum
minimum
maximum
N m
Non-lubricated threads
(lbf in)
Terminal torque
Case style
HALF-PAK module
1000
100
10
10 000
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 25 °C
0.1
1
0.01
0
5
10 15 20 25 30 35 40 45
0
0.2
0.4
0.6
0.8
1.0
1.2
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 08-May-17
Document Number: 94148
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180NQ045PbF
Vishay Semiconductors
www.vishay.com
10 000
TJ = 25 °C
1000
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
160
150
140
130
120
110
100
90
200
D = 0.20
180
160
140
120
100
80
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Square wave (D = 0.50)
80 % rated VR applied
60
RMS limit
40
20
DC
80 100 120 140 160
See note (1)
0
80
0
20
40
60
0
50
100
150
200
250
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 08-May-17
Document Number: 94148
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180NQ045PbF
Vishay Semiconductors
www.vishay.com
100 000
10 000
1000
At any rated load condition
and with rated VRRM applied
following surge
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
ORDERING INFORMATION TABLE
Device code
18
0
N
Q
045 PbF
VS-
1
2
3
4
5
6
7
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Average current rating (x 10)
Product silicon identification
N = not isolated
2
3
4
5
6
7
Q = Schottky rectifier diode
Voltage rating (045 = 45 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 08-May-17
Document Number: 94148
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24ꢀ4 (0ꢀ96ꢂ
13 (0ꢀꢁ1ꢂ
17ꢀꢁ (0ꢀ69ꢂ
16ꢀꢁ (0ꢀ6ꢁꢂ
ꢁ (0ꢀ20ꢂ
4 (0ꢀ16ꢂ
30 0ꢀ0ꢁ
(1ꢀ2 0ꢀ002ꢂ
ꢁ (0ꢀ196ꢂ + 4ꢁ°
Ø 7ꢀ3 0ꢀ1 (0ꢀ29 0ꢀ0039ꢂ
21 (0ꢀ82ꢂ
20 (0ꢀ78ꢂ
- 0ꢀ1
Ø 4ꢀ3
0ꢀ0
- 0ꢀ004
0ꢀ000
(Ø 0ꢀ169
ꢂ
¼" - 20 UNC
40 MAXꢀ (1ꢀꢁ8ꢂ
Document Number: 95020
Revision: 20-May-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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