VS-22RIA60S90 [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-22RIA60S90 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总8页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-22RIA Series
Vishay Semiconductors
www.vishay.com
Medium Power Phase Control Thyristors
(Stud Version), 22 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
TO-208AA (TO-48)
PRODUCT SUMMARY
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Package
Diode variation
IT(AV)
TO-208AA (TO-48)
Single SCR
22 A
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
VDRM/VRRM
100 V to 1200 V
1.70 V
VTM
IGT
60 mA
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
TJ
-65 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
22
85
A
°C
A
IT(AV)
IT(RMS)
ITSM
TC
35
50 Hz
60 Hz
50 Hz
60 Hz
400
A
420
793
I2t
A2s
724
VDRM/VRRM
100 to 1200
110
V
tq
Typical
μs
°C
TJ
-65 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM NON-REPETITIVE
I
DRM/IRRM MAXIMUM
TYPE
NUMBER
VOLTAGE
CODE
AND OFF-STATE VOLTAGE (1)
V
PEAK VOLTAGE (2)
V
AT TJ = TJ MAXIMUM
mA
20
10
20
100
200
150
300
40
400
500
VS-22RIA
60
600
700
10
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
For voltage pulses with tp 5 ms
(2)
Revision: 11-Mar-14
Document Number: 93700
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° sinusoidal conduction
VALUES
22
UNITS
A
°C
A
Maximum average on-state current
at case temperature
IT(AV)
85
Maximum RMS on-state current
IT(RMS)
35
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
335
355
793
724
560
515
No voltage
reapplied
Maximum peak, one-cycle
non-repetitive surge current
ITSM
A
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ =TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
Maximum I2t for fusing
I2t
7930
A2s
Low level value of threshold voltage
High level value of threshold voltage
VT(TO)1
VT(TO)2
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
0.83
0.95
V
Low level value of
on-state slope resistance
rt1
rt2
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
14.9
13.4
m
High level value of
on-state slope resistance
(I > x IT(AV)), TJ = TJ maximum
Maximum on-state voltage
Maximum holding current
Latching current
VTM
IH
Ipk = 70 A, TJ = 25 °C
1.70
130
200
V
TJ = 25 °C, anode supply 6 V, resistive load
mA
IL
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
200
UNITS
VDRM 600 V
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
TM = (2 x rated dI/dt) A
VDRM 800 V
VDRM 1000 V
VDRM 1600 V
180
Maximum rate of rise
of turned-on current
dI/dt
A/μs
160
I
150
Typical turn-on time
tgt
trr
TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C
0.9
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs,
dI/dt = - 10 A/μs
Typical reverse recovery time
Typical turn-off time
4
μs
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
tq
110
Note
•
tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
100
UNITS
TJ = TJ maximum linear to 100 % rated VDRM
TJ = TJ maximum linear to 67 % rated VDRM
Maximum critical rate of rise
of off-state voltage
dV/dt
V/μs
300 (1)
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90
Revision: 11-Mar-14
Document Number: 93700
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
Vishay Semiconductors
www.vishay.com
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
8.0
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
TJ = TJ maximum
W
PG(AV)
IGM
2.0
TJ = TJ maximum
TJ = TJ maximum
TJ = - 65 °C
1.5
A
V
-VGM
10
90
DC gate current required to trigger
IGT
TJ = 25 °C
60
mA
Maximum required gate trigger
TJ = 125 °C
TJ = - 65 °C
TJ = 25 °C
TJ = 125 °C
35
3.0
2.0
1.0
2.0
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
DC gate voltage required to trigger
DC gate current not to trigger
VGT
V
IGD
TJ = TJ maximum, VDRM = Rated value
Maximum gate current/voltage
mA
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
TJ = TJ maximum,
DRM = Rated value
DC gate voltage not to trigger
VGD
0.2
V
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
TJ, TStg
-65 to 125
0.86
°C
and storage temperature range
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
0.35
TO NUT TO DEVICE
20 (27.5)
0.23 (0.32)
2.3 (3.1)
25
0.29
2.8
lbf in
kgf · m
N · m
g
Lubricated threads
Mounting torque
(Non-lubricated threads)
14
0.49
TO-208AA (TO-48)
Approximate weight
Case style
oz.
See dimensions - link at the end of datasheet
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
0.21
0.25
0.31
0.45
0.76
0.15
0.25
0.34
0.47
0.76
180°
120°
90°
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 93700
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
Vishay Semiconductors
www.vishay.com
130
120
110
100
90
130
120
110
100
90
22RIA Series
thJC
22RIA Series
thJC
R
(DC) = 0.86 K/W
R
(DC) = 0.86 K/W
Conduction Angle
Conduction Period
30°
30°
60°
60°
90°
90°
120°
120°
180°
180°
DC
30
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
80
80
0
5
10
15
20
25
0
10
20
40
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
40
R
180°
35
30
25
20
15
10
5
120°
90°
60°
30°
=
1
K
/
W
-
D
e
RMS Limit
l
t
a
R
5K
/
W
Conduction Angle
22RIA Series
T = 125°C
J
0
0
5
Average On-state Current (A)
Fig. 2 - On-State Power Loss Characteristics
10
15
20
205
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
50
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
t
h
S
A
60°
30°
RMS Limit
Conduction Period
22RIA Series
T = 125°C
J
0
0
5
10 15 20 25 30 305
25
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
50
75
100
125
Average On-state Current (A)
Revision: 11-Mar-14
Document Number: 93700
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
Vishay Semiconductors
www.vishay.com
400
375
350
325
300
275
250
225
200
175
150
375
350
325
300
275
250
225
200
175
150
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
22RIA Series
22RIA Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
100
10
T = 25°C
J
T = 125°C
J
22RIA Series
1
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 6 - Forward Voltage Drop Characteristics
1
Steady State Value
= 0.86 K/W
R
thJC
(DC Operation)
0.1
22RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 7 - Thermal Impedance ZthJC Characteristics
Revision: 11-Mar-14
Document Number: 93700
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
Vishay Semiconductors
www.vishay.com
100
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
a) Recommended load line for
rated di/dt : 10V, 20ohms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
10
1
(a)
(b)
(4)
(3)
(2)
(1)
VGD
IGD
22RIA Series Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 22
RIA 120
M
S90
1
2
3
4
5
6
1
2
3
4
5
-
-
-
-
-
Vishay Semiconductors product
Current code
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
-
Critical dV/dt:
6
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95333
Revision: 11-Mar-14
Document Number: 93700
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-208AA (TO-48)
DIMENSIONS in millimeters (inches)
Ø 1.7/1.8
(Ø 0.06/0.07)
Ø 3.9/4.1
(Ø 0.15/0.16)
30.2 MAX.
(0.18 MAX.)
22.2 MAX.
(0.87 MAX.)
12.8 MAX.
(0.5 MAX.)
10.7/11.5
(0.42/0.45)
1/4"-28UNF-2A
For metric device M6 x 1
Ø 15.5
(Ø 0.61)
13.8/14.3
(0.54/0.56)
Across flats
45°
Document Number: 95333
Revision: 07-Jul-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
1
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