VS-240UR120D [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 320A, 1200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN;
VS-240UR120D
型号: VS-240UR120D
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 320A, 1200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN

高压 二极管
文件: 总7页 (文件大小:171K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-240U(R).. Series  
Vishay Semiconductors  
www.vishay.com  
Standard Recovery Diodes  
(Stud Version), 320 A  
FEATURES  
• Diffused diode  
• Wide current range  
• High voltage ratings up to 1200 V  
• High surge current capabilities  
• Stud cathode and stud anode version  
• Hermetic metal case  
• Designed and qualified for industrial level  
DO-205AB (DO-9)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
• Welders  
• Power supplies  
PRODUCT SUMMARY  
• Machine tool controls  
• High power drives  
• Medium traction applications  
• Battery charges  
IF(AV)  
320 A  
Package  
DO-205AB (DO-9)  
Single diode  
Circuit configuration  
• Freewheeling diodes  
MAJOR RATINGS AND CHARACTERISTICS  
parameter  
test conditions  
VALUES  
320  
UNITS  
A
°C  
A
IF(AV)  
IF(RMS)  
IFSM  
TC  
100  
500  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
Range  
4500  
A
4700  
101  
I2t  
kA2s  
92  
VRRM  
TJ  
600 to 1200  
-40 to +180  
V
°C  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM REPETITIVE  
PEAK REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM MAXIMUM  
AT TJ = TJ MAXIMUM  
mA  
VOLTAGE  
CODE  
TYPE NUMBER  
PEAK REVERSE VOLTAGE  
V
60  
80  
600  
800  
700  
900  
VS-240U(R)..  
15  
100  
120  
1000  
1200  
1100  
1300  
Revision: 27-Jun-14  
Document Number: 93504  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-240U(R).. Series  
Vishay Semiconductors  
www.vishay.com  
FORWARD CONDUCTION  
PARAMETER  
SYMBOL  
IF(AV)  
TEST CONDITIONS  
180° conduction, half sine wave  
DC at 80 °C case temperature  
VALUES  
320  
UNITS  
A
Maximum average forward current  
at case temperature  
100  
°C  
Maximum RMS forward current  
IF(RMS)  
500  
t = 10 ms  
4500  
4700  
3800  
4000  
101  
No voltage   
reapplied  
t = 8.3 ms  
A
Maximum peak, one cycle forward,  
non-repetitive surge current  
IFSM  
t = 10 ms  
100%VRRM  
reapplied  
t = 8.3 ms  
Sinusoidal half wave,  
initial TJ = TJ maximum  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
No voltage   
reapplied  
92  
Maximum I2t for fusing  
I2t  
kA2s  
72  
100%VRRM  
reapplied  
66  
Maximum I2t for fusing  
Slope resistance  
I2t  
rf  
t = 0.1 to 10 ms, no voltage reapplied  
TJ = TJ maximum  
1010  
0.6  
kA2s  
m  
Threshold voltage  
VF(T0)  
VFM  
0.83  
1.33  
V
Maximum forward voltage drop  
Ipk = 750 A, TJ = 25 °C, tp = 10 ms sinusoidal wave  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction operating  
and storage temperature range  
TJ, TStg  
-40 to 180  
°C  
Maximum thermal resistance,  
RthJC  
RthCS  
DC operation  
0.18  
0.08  
junction to case  
K/W  
Maximum thermal resistance,  
case to heatsink  
Mounting surface, smooth, flat and greased  
Not lubricated threads  
Lubricated threads  
37 (330)  
28 (250)  
250  
N · m  
(lbf · in)  
Maximum allowable mounting torque +0 -20 %  
Approximate weight  
Case style  
g
See dimensions - link at the end of datasheet  
DO-205AB (DO-9  
RthJC CONDUCTION  
CONDUCTION ANGLE  
SINUSOIDAL CONDUCTION  
RECTANGULAR CONDUCTION  
TEST CONDITIONS  
UNITS  
180°  
120°  
90°  
0.019  
0.023  
0.030  
0.045  
0.076  
0.015  
0.025  
0.034  
0.047  
0.076  
TJ = TJ maximum  
K/W  
60°  
30°  
Note  
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  
Revision: 27-Jun-14  
Document Number: 93504  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-240U(R).. Series  
Vishay Semiconductors  
www.vishay.com  
180  
160  
140  
120  
100  
80  
180  
170  
160  
150  
140  
130  
120  
110  
240U(R)  
240U(R)  
RthJC (DC) = 0.18 K/W  
RthJC (DC) = 0.18 K/W  
Conduction Angle  
Conduction Period  
30 °  
60 °  
90 °  
30 °  
60 °  
100  
90  
90 °  
120 °  
300  
120 °  
180 °  
180 °  
400  
DC  
500  
60  
80  
0
100  
200  
600  
0
50  
100  
150  
200  
250  
300  
350  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
450  
180 °  
Rth  
400  
120 °  
S
0.2 K/W  
0.3 K/W  
A = 0.1 K/W - Delta R  
350  
300  
250  
200  
150  
100  
50  
90 °  
60 °  
30 °  
0.5 K/W  
RMS Limit  
0.7 K/W  
1 K/W  
Conduction Angle  
1.5 K/W  
3 K/W  
240U(R)..  
Tj = 180 °C  
0
20 40 60 80 100 120 140 160 180  
250 300 350  
0
50  
100  
150 200  
Average Forward Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 3 - Forward Power Loss Characteristics  
600  
500  
400  
300  
200  
100  
0
DC  
180 °  
120 °  
90 °  
60 °  
30 °  
Rth  
S
A = 0.1 K/W - Delta R  
0.2 K/W  
0.3 K/W  
RMS Limit  
0.5 K/W  
0.7 K/W  
Conduction Period  
1 K/W  
1.5 K/W  
240U(R)  
Tj = 180 °C  
3 K/W  
20 40 60 80 100 120 140 160 180  
600  
0
100  
200  
300  
400  
500  
Average Forward Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 4 - Forward Power Loss Characteristics  
Revision: 27-Jun-14  
Document Number: 93504  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-240U(R).. Series  
Vishay Semiconductors  
www.vishay.com  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
4000  
3800  
3600  
3400  
3200  
3000  
2800  
2600  
2400  
2200  
Maximum Non Repetitive Surge Current  
At Any Rated Load Condition And With  
Rated Vrrm Applied Following Surge.  
Versus Pulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
Initial T j = 180 °C  
Initial Tj = 180 °C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
No Voltage Reapplied  
Rated Vrrm Reapplied  
Per Junction  
Per Junction  
1
10  
100  
0.01  
0.1  
1
Number Of Equal Amplitude  
Half Cycle Current Pulses (N)  
Pulse Train Duration (s)  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Fig. 6 - Maximum Non-Repetitive Surge Current  
10 000  
Tj = 25°C  
Tj = 180 °C  
1000  
100  
10  
0.5  
1
1.5  
2
2.5  
3
3.5  
Instantaneous Forward Voltage (V)  
Fig. 7 - Forward Voltage Drop Characteristics  
1
Steady State Value  
thJC per junction = 0.18 K/W  
DC Operation)  
R
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t - Square Wave Pulse Duration (s)  
Fig. 8 - Thermal Impedance ZthJC Characteristic  
Revision: 27-Jun-14  
Document Number: 93504  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-240U(R).. Series  
Vishay Semiconductors  
www.vishay.com  
ORDERING INFORMATION TABLE  
Device code  
VS- 24  
0
U
R
60  
D
7
1
2
3
4
5
6
1
2
3
4
-
-
-
-
-
Vishay Semiconductors product  
24 = essential part number  
0 = standard device  
U = stud normal polarity (cathode to stud)  
5
5
6
None = stud normal polarity (cathode to stud)  
R = stud reverse polarity (anode to stud)  
Voltage code x 10 = VRRM (see Voltage Ratings table)  
-
-
Diffused diode  
7
Note = For metric device M16 x 1.5 contact factory  
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95317  
Revision: 27-Jun-14  
Document Number: 93504  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
DO-205AB (DO-9) for 240U(R) Series  
DIMENSIONS in millimeters (inches)  
19.2 (0.76) MAX.  
23 (0.91) plone  
MIN.  
Ø 8.9 (0.35)  
Ø 8.4 (0.33)  
Ø 27.9 (1.1) MAX.  
190 (7.48) MAX.  
SW 32  
53.3 (2.1) MAX.  
10 (0.39) MAX.  
21 (0.82) MAX.  
3.18 (0.12) MAX.  
Unthreaded portion  
3/4"-16UNF-2A (1)  
Note  
(1)  
For metric device M16 x 1.5 contact factory  
Document Number: 95317  
Revision: 02-Jul-08  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
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Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
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Revision: 02-Oct-12  
Document Number: 91000  
1

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