VS-30CDU06HM3/I [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, SMPD, 3/2 PIN;
| 型号： | VS-30CDU06HM3/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, SMPD, 3/2 PIN 超快软恢复二极管 快速软恢复二极管 光电二极管 |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-30CDU06HM3
Vishay Semiconductors
www.vishay.com
Ultrafast Rectifier, 2 x 15 A FRED Pt®
FEATURES
• Ultrafast recovery time, reduced Qrr, and soft
recovery
K
• 175 °C maximum operating junction temperature
• For PFC CRM, snubber operation
• Low forward voltage drop
1
2
• Low leakage current
Top View
Bottom View
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
TO-263AC (SMPD)
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
Anode 1
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode 2
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop and ultrafast
recovery time, and soft recovery.
PRODUCT SUMMARY
Package
TO-263AC (SMPD)
2 x 15 A
600 V
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
IF(AV)
VR
These devices are intended for use in PFC, boost, in the
AC/DC section of SMPS, freewheeling and clamp diodes.
VF at IF
trr
0.9 V
55 ns
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
TJ max.
Diode variation
175 °C
Dual die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
600
UNITS
Peak repetitive reverse voltage
VRRM
V
per device
30
Average rectified forward current
Non-repetitive peak surge current
IF(AV)
Tsolder pad = 143 °C
per diode
per device
per diode
15
A
300
IFSM
TJ = 25 °C, 6 ms square pulse
160
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
600
-
-
V
IF = 15 A
-
-
-
-
-
1.03
0.9
-
1.25
1.1
15
Forward voltage, per diode
VF
IF = 15 A, TJ = 150 °C
VR = VR rated
Reverse leakage current, per diode
Junction capacitance, per diode
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 600 V
70
13
300
-
CT
Revision: 10-Feb-15
Document Number: 95823
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CDU06HM3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
MIN.
TYP.
55
MAX. UNITS
-
-
-
-
-
-
-
-
-
-
65
ns
-
Reverse recovery time
trr
96
TJ = 125 °C
150
18
-
IF = 15 A,
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
Peak recovery current
IRRM
dIF/dt = 500 A/μs,
A
26
-
VR = 400 V
1.0
2.0
-
Reverse recovery charge
Qrr
μC
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55
-
+175
1.7
°C
Thermal resistance, per diode
junction to solder pad
RthJ-Sp
-
1.2
°C/W
0.55
0.02
g
Approximate weight
Marking device
oz.
Case style TO-263AC (SMPD)
30CDU06
100
1000
TJ = 175 °C
TJ = 150 °C
100
10
TJ = 175 °C
10
1
TJ = 125 °C
1
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.01
0.001
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 10-Feb-15
Document Number: 95823
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CDU06HM3
Vishay Semiconductors
www.vishay.com
1000
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
175
170
165
160
155
150
145
140
135
130
30
25
20
RMS limit
DC
15
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
10
5
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
0
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 10-Feb-15
Document Number: 95823
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CDU06HM3
Vishay Semiconductors
www.vishay.com
250
225
200
175
150
125
100
75
3000
2500
2000
1500
1000
500
125 °C
125 °C
25 °C
25 °C
50
0
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 10-Feb-15
Document Number: 95823
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CDU06HM3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
30
C
D
U
06
H
M3
1
2
3
4
5
6
7
8
1
-
-
-
Vishay Semiconductors product
Current rating (30 A)
2
3
Circuit configuration:
C = common cathode
4
5
-
-
D = SMPD package
Process type,
U = ultrafast recovery
6
7
8
-
-
Voltage code (06 = 600 V)
H = AEC-Q101 qualified
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30CDU06HM3/I
2000
2000
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95604
Part marking information
Packaging information
www.vishay.com/doc?95566
www.vishay.com/doc?88869
Revision: 10-Feb-15
Document Number: 95823
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-263AC (SMPD)
DIMENSIONS in inches (millimeters)
TO-263AC (SMPD)
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Revision: 02-Jun-14
Document Number: 95604
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
1
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