VS-47CTQ020STRLPBF [VISHAY]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 20V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3;
VS-47CTQ020STRLPBF
型号: VS-47CTQ020STRLPBF
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 20V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3

高功率电源 二极管
文件: 总8页 (文件大小:264K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-47CTQ020SPbF, VS-47CTQ020-1PbF  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 20 A  
TO-263AB (D2PAK)  
TO-262AA  
FEATURES  
• 150 °C TJ operation  
• Center tap configuration  
• Optimized for 3.3 V application  
• Ultralow forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
Base  
common  
cathode  
• Guard ring for enhanced ruggedness and long  
term reliability  
2
2
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified  
VS-47CTQ020-1PbF  
VS-47CTQ020SPbF  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
IF(AV)  
2 x 20 A  
DESCRIPTION  
VR  
20 V  
0.34 V  
This center tap Schottky rectifier module has been  
optimized for ultralow forward voltage drop specifically for  
3.3 V output power supplies. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are parallel  
switching power supplies, converters, reverse battery  
protection, and redundant power subsystems.  
VF at IF  
I
RM max.  
310 mA at 125 °C  
150 °C  
TJ max.  
EAS  
18  
Package  
TO-263AB (D2PAK), TO-262AA  
Diode variation  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
20  
tp = 5 μs sine  
1000  
A
VF  
20 Apk, TJ = 125 °C  
0.34  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
VS-47CTQ020SPbF  
VS-47CTQ020-1PbF  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
125 °C  
150 °C  
20  
10  
Maximum DC reverse voltage  
VR  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 135 °C, rectangular waveform  
VALUES  
UNITS  
per leg  
20  
40  
Maximum average  
forward current  
IF(AV)  
per device  
A
Following any rated load  
condition and with rated  
VRRM applied  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 3 mH  
1000  
250  
18  
Maximum peak one cycle  
IFSM  
EAS  
IAR  
non-repetitive surge current per leg  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3
Revision: 15-Aug-15  
Document Number: 94228  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-47CTQ020SPbF, VS-47CTQ020-1PbF  
www.vishay.com  
Vishay Semiconductors  
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
0.45  
0.51  
0.34  
0.44  
0.31  
0.42  
60  
UNITS  
20 A  
40 A  
20 A  
40 A  
20 A  
40 A  
TJ = 25 °C  
(1)  
Maximum forward voltage drop per leg  
VFM  
TJ = 125 °C  
V
TJ = 150 °C  
VR = 5 V  
TJ = 125 °C  
VR = 3.3 V  
45  
Maximum reverse leakage   
(1)  
IRM  
TJ = 150 °C  
TJ = 25 °C  
VR = 10 V  
306  
mA  
current per leg  
3
VR = Rated VR  
TJ = 125 °C  
TJ = TJ maximum  
310  
Threshold voltage  
VF(TO)  
rt  
0.188  
5.9  
V
Forward slope resistance  
m  
pF  
Maximum junction capacitance per leg  
Typical series inductance per leg  
Maximum voltage rate of change  
CT  
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C  
Measured lead to lead 5 mm from package body  
Rated VR  
3000  
5.5  
LS  
nH  
dV/dt  
10 000  
V/μs  
Note  
(1)  
Pulse width < 300 μs, duty cycle < 2 %  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
-55 to +150  
°C  
Maximum thermal resistance,  
1.5  
junction to case per leg  
RthJC  
DC operation  
Maximum thermal resistance,  
junction to case per package  
0.75  
0.50  
°C/W  
Typical thermal resistance,   
case to heatsink  
RthCS  
Mounting surface, smooth and greased  
2
g
Approximate weight  
Mounting torque  
Marking device  
0.07  
oz.  
minimum  
maximum  
6 (5)  
kgf cm  
(lbf in)  
12 (10)  
Case style TO-263AB (D2PAK)  
Case style TO-262AA  
47CTQ020S  
47CTQ020-1  
Revision: 15-Aug-15  
Document Number: 94228  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-47CTQ020SPbF, VS-47CTQ020-1PbF  
www.vishay.com  
Vishay Semiconductors  
1000  
1000  
100  
10  
TJ = 150 °C  
100  
TJ = 125 °C  
TJ = 100 °C  
10  
TJ = 75 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 25 °C  
1
TJ = 50 °C  
TJ = 25 °C  
0.1  
0.01  
1
0
4
8
12  
16  
20  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VR - Reverse Voltage (V)  
VFM - Forward Voltage Drop (V)  
Fig. 1 - Maximum Forward Voltage Drop Characteristics  
(Per Leg)  
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage  
(Per Leg)  
10 000  
TJ = 25 °C  
1000  
0
2
4
6
8
10  
14 16 18 20 22  
12  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)  
10  
1
PDM  
t1  
t2  
0.1  
D = 0.75  
Single pulse  
(thermal resistance)  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
Notes:  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)  
Revision: 15-Aug-15  
Document Number: 94228  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-47CTQ020SPbF, VS-47CTQ020-1PbF  
www.vishay.com  
Vishay Semiconductors  
160  
150  
140  
130  
120  
110  
100  
90  
12  
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
10  
DC  
8
RMS limit  
6
Square wave (D = 0.50)  
10 V applied  
DC  
4
2
0
See note (1)  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current (Per Leg)  
Fig. 6 - Forward Power Loss Characteristics (Per Leg)  
1000  
At any rated load condition  
and with rated VRRM applied  
following surge  
100  
10  
100  
1000  
10 000  
tp - Square Wave Pulse Duration (µs)  
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)  
L
High-speed  
switch  
IRFP460  
D.U.T.  
Freewheel  
diode  
Rg = 25 Ω  
Vd = 25 V  
+
Current  
monitor  
40HFL40S02  
Fig. 8 - Unclamped Inductive Test Circuit  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC;  
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);   
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V  
Revision: 15-Aug-15  
Document Number: 94228  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-47CTQ020SPbF, VS-47CTQ020-1PbF  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS-  
47  
C
T
Q
020  
S
TRL PbF  
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product  
Current rating (40 A)  
Circuit configuration: C = common cathode  
T = TO-220  
Schottky “Q” series  
Voltage rating (020 = 20 V)  
S = D2PAK  
-1 = TO-262  
8
9
-
-
None = tube (50 pieces)  
TRL = tape and reel (left oriented - for D2PAK only)  
TRR = tape and reel (right oriented - for D2PAK only)  
PbF = lead (Pb)-free  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
QUANTITY PER REEL  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
VS-42CTQ020SPBF  
50  
1000  
800  
Antistatic plastic tubes  
13" diameter plastic tape and reel  
13" diameter plastic tape and reel  
Antistatic plastic tubes  
VS-42CTQ020STRRPBF  
VS-42CTQ020STRLPBF  
VS-42CTQ020-1PBF  
800  
800  
50  
800  
1000  
LINKS TO RELATED DOCUMENTS  
TO-263AB (D2PAK)  
www.vishay.com/doc?95046  
Dimensions  
TO-262AA  
www.vishay.com/doc?95419  
www.vishay.com/doc?95008  
www.vishay.com/doc?95032  
Part marking information  
Packaging information  
Revision: 15-Aug-15  
Document Number: 94228  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
D2PAK, TO-262  
DIMENSIONS - D2PAK in millimeters and inches  
Conforms to JEDEC outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
110ꢀꢀ  
MIN0  
(ꢀ0ꢁ3)  
(3)  
D
L1  
2
9065  
MIN0  
(ꢀ038)  
(D1) (3)  
Detail A  
1709ꢀ (ꢀ07ꢀ)  
150ꢀꢀ (ꢀ0625)  
H
(2)  
1
3
3081  
MIN0  
L2  
(ꢀ015)  
B
B
2032  
MIN0  
(ꢀ0ꢀ8)  
A
B
206ꢁ (ꢀ01ꢀ3)  
20ꢁ1 (ꢀ0ꢀ96)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
ꢀ0ꢀꢀꢁ M  
Base  
Metal  
ꢀ0ꢀ1ꢀ M  
M
B
A
Plating  
(ꢁ)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(ꢁ)  
c1  
(c)  
B
ꢀ° to 8°  
L3  
Seating  
plane  
Lead assignments  
A1  
Lead tip  
(b, b2)  
L
Diodes  
Lꢁ  
Detail “A”  
Rotated 9ꢀ °CW  
Scale: 8:1  
Section B - B and C - C  
Scale: None  
10 - Anode (two die)/open (one die)  
20, ꢁ0 - Cathode  
30 - Anode  
MILLIMETERS  
SYMBOL  
INCHES  
MILLIMETERS  
INCHES  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
(7)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conforms to JEDEC outline TO-263AB  
(2)  
(3)  
(4)  
(5)  
(6)  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Document Number: 95014  
Revision: 31-Mar-09  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
Outline Dimensions  
Vishay Semiconductors  
D2PAK, TO-262  
DIMENSIONS - TO-262 in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(ꢁ)  
b1, b3  
Plating  
c
M
M
B
ꢀ0ꢀ1ꢀ  
A
Lead assignments  
c1  
(ꢁ)  
Diodes  
10 - Anode (two die)/open (one die)  
20, ꢁ0 - Cathode  
30 - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
(4)  
(5)  
Controlling dimension: inches  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 95014  
Revision: 31-Mar-09  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

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VISHAY

VS-48CTQ060PBF

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 60V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
VISHAY

VS-48CTQ060STRL-M3

Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY

VS-48CTQ060STRR-M3

Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY

VS-48MB-N-SM2

Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.015A (COIL), 48VDC (COIL), 700mW (COIL), 10A (CONTACT), 24VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT, ROHS COMPLIANT
FUJITSU

VS-48MB-N-UC

Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.015A (COIL), 48VDC (COIL), 700mW (COIL), 10A (CONTACT), 24VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT, ROHS COMPLIANT
FUJITSU

VS-48MB-SM2

Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.015A (COIL), 48VDC (COIL), 700mW (COIL), 10A (CONTACT), 24VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT, ROHS COMPLIANT
FUJITSU

VS-48MB-UC

Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.015A (COIL), 48VDC (COIL), 700mW (COIL), 10A (CONTACT), 24VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT, ROHS COMPLIANT
FUJITSU