VS-50RIA10 [VISHAY]
Silicon Controlled Rectifier, 80A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN;
| 型号： | VS-50RIA10 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 80A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN 栅 栅极 |
| 文件： | 总8页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-50RIA Series
Vishay Semiconductors
www.vishay.com
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/μs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
TO-208AC (TO-65)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
Package
Diode variation
IT(AV)
TO-208AC (TO-65)
Single SCR
50 A
• Battery charges
V
DRM/VRRM
VTM
100 V to 1200 V
1.60 V
• Regulated power supplies and temperature and speed
control circuit
IGT
100 mA
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
TJ
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
50
UNITS
A
°C
A
IT(AV)
TC
94
IT(RMS)
80
50 Hz
60 Hz
50 Hz
60 Hz
1430
ITSM
A
1490
10.18
9.30
I2t
kA2s
V
DRM/VRRM
100 to 1200
110
V
tq
Typical
μs
°C
TJ
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE
VRSM, MAXIMUM
IDRM/IRRM MAXIMUMAT
TJ = TJ MAXIMUM
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK AND OFF-STATE VOLTAGE (1)
V
NON-REPETITIVE PEAK VOLTAGE (2)
V
10
20
100
200
150
300
40
400
500
VS-50RIA
60
600
700
15
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
For voltage pulses with tp 5 ms
(2)
Revision: 11-Mar-14
Document Number: 93711
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° sinusoidal conduction
VALUES UNITS
50
94
A
°C
A
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
80
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1430
1490
1200
1255
10.18
9.30
7.20
6.56
No voltage
reapplied
Maximum peak, one-cycle
ITSM
A
non-repetitive surge current
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
Maximum I2t for fusing
I2t
101.8
kA2s
Low level value of threshold voltage
High level value of threshold voltage
VT(TO)1
VT(TO)2
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum
0.94
1.08
V
Low level value of on-state
slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
4.08
m
High level value of on-state
rt2
VTM
IH
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum
3.34
1.60
200
400
slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
Ipk = 157 A, TJ = 25 °C
V
TJ = 25 °C, anode supply 22 V, resistive load,
initial IT = 2 A
mA
IL
Anode supply 6 V, resistive load
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
VDRM 600 V
VDRM 1600 V
200
A/μs
100
TC = 125 °C, VDM = Rated VDRM,
Maximum rate of
rise of turned-on current
dI/dt
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
I
TM = (2 x rated dI/dt) A
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit
Gate pulse = 10 V, 15 source, tp = 20 μs
Typical delay time
td
tq
0.9
μs
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/μs
dIr/dt = - 10 A/μs, VR = 50 V
Typical turn-off time
110
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum linear to 100 % rated VDRM
TJ = TJ maximum linear to 67 % rated VDRM
VALUES UNITS
200
V/μs
Maximum critical rate of rise of
off-state voltage
dV/dt
500 (1)
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
Revision: 11-Mar-14
Document Number: 93711
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
Vishay Semiconductors
www.vishay.com
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
VALUES UNITS
Maximum peak gate power
10
W
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
PG(AV)
IGM
2.5
2.5
20
A
V
+VGM
-VGM
10
TJ = - 40 °C
TJ = 25 °C
250
100
50
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
TJ = 125 °C
TJ = - 40 °C
3.5
2.5
VGT
TJ = 25 °C
TJ = TJ maximum,
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
5.0
0.2
mA
V
V
DRM = Rated voltage
VGD
TJ = TJ maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum operating junction and
TJ, TStg
-40 to 125
0.35
°C
storage temperature range
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.25
3.4 + 0 - 10
%
(30)
N · m
(lbf · in)
Allowable mounting torque
2.3 + 0 - 10
%
Lubricated threads
(20)
28
g
Approximate weight
Case style
1.0
oz.
See dimensions - link at the end of datasheet
TO-208AC (TO-65)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.078
0.094
0.120
0.176
0.294
0.057
0.098
0.130
0.183
0.296
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 93711
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
Vishay Semiconductors
www.vishay.com
130
120
110
100
90
100
90
80
70
60
50
40
30
20
10
0
50RIA Series
thJC
DC
R
(DC) = 0.35 K/W
180°
120°
90°
60°
30°
Conduction Angle
RMS Limit
30°
60°
Conduction Period
50RIA Series
90°
30
120°
180°
T = 125°C
J
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0
10
20
40
50
60
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
1300
At Any Rated Load Condition And With
50RIA Series
thJC
Rated V
Applied Following Surge.
RRM
R
(DC) = 0.35 K/W
Initial T = 125°C
1200
1100
1000
900
J
120
110
100
90
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
800
90°
60°
700
120°
50RIA Series
30°
180°
DC
80
600
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
80
1500
Maximum Non Repetitive Surge Current
180°
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1400
1300
1200
1100
1000
900
120°
90°
60°
30°
70
60
50
40
30
20
10
0
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
RMS Limit
Conduction Angle
50RIA Series
800
700
T = 125°C
J
50RIA Series
600
500
0.01
0
10
20
30
40
50
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Mar-14
Document Number: 93711
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
Vishay Semiconductors
www.vishay.com
1000
100
10
T = 25°C
J
T = 125°C
J
50RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value
= 0.35 K/W
R
thJ-hs
0.1
50RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 5ms
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30%rated di/dt : 20V, 65 ohms
tr<=1 µs
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(b)
(a)
(1) (2) (3) (4)
VGD
IGD
0.01
50RIA Series Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.1
1
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Revision: 11-Mar-14
Document Number: 93711
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
50
RIA 120 S90
M
1
2
3
4
5
6
1
-
-
-
-
-
Vishay Semiconductors product
Current code
2
Essential part number
3
4
Voltage code x 10 = VRRM (see Voltage Ratings table)
Critical dV/dt:
5
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M = Stud base TO-208AC (TO-65) M6 x 1
6
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95334
Revision: 11-Mar-14
Document Number: 93711
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-208AC (TO-65)
DIMENSIONS in millimeters (inches)
5.1/7.6
(0.2/0.3)
Ø 4.1 (Ø 0.16)
3 MIN.
(0.118 MIN.)
Ø 1.5 (Ø 0.06)
2.5/3.6
(0.1/0.14)
31 MAX.
(1.22 MAX.)
22.4 MAX.
(0.88 MAX.)
Ø 15 (Ø 0.59)
14.5 MAX.
(0.57 MAX.)
10.7/11.5
(0.42/0.46)
1/4"-28UNF-2A
for metric device M6 x 1
Ø 19.2 (Ø 0.75)
17.2/17.35
(0.67/0.68)
Across flats
1.7/1.8
(0.06/0.07)
2.7 (0.106)
Document Number: 95334
Revision: 08-Jul-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
1
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