VS-65APF12L-M3 [VISHAY]
Fast Soft Recovery Rectifier Diode, 65 A;
| 型号： | VS-65APF12L-M3 |
| 厂家： | 
VISHAY |
| 描述： | Fast Soft Recovery Rectifier Diode, 65 A |
| 文件： | 总9页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-65EPF12L-M3, VS-65APF12L-M3
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop and short
reverse recovery time
• Glass passivated pellet chip junction
2
1
1
• Designed and qualified according to
JEDEC®-JESD 47
2
3
3
• Flexible solution for reliable AC power rectification
TO-247AD 3L
TO-247AD 2L
• High surge, low VF rugged blocking diode for DC charging
stations
Base cathode
Base cathode
2
2
• AEC-Q101 qualified P/N available (VS-65EPF12LHM3,
VS-65APF12LHM3)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
3
1
3
Cathode
Anode
Anode
Anode
APPLICATIONS
VS-65EPF12L-M3
VS-65APF12L-M3
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
PRIMARY CHARACTERISTICS
IF(AV)
65 A
1200 V
1.42 V
830 A
95 ns
VR
DESCRIPTION
VF at IF
IFSM
The VS-65EPF12L-M3, VS-65APF12L-M3 soft recovery
rectifier series has been optimized for combined short
reverse recovery time and low forward voltage drop.
trr
TJ max.
150 °C
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Package
Circuit configuration
Snap factor
TO-247AD 2L, TO-247AD 3L
Single
0.6
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
trr
CHARACTERISTICS
VALUES
65
UNITS
Sinusoidal waveform
A
V
1200
830
A
1 A, 100 A/μs
95
ns
V
VF
30 A, TJ = 25 °C
1.20
TJ
-40 to +150
°C
VOLTAGE RATINGS
VRSM, MAXIMUM
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
NON-REPETITIVEPEAKREVERSE
PART NUMBER
VOLTAGE
V
VS-65EPF12L-M3
VS-65APF12L-M3
1200
1200
1300
1300
16
Revision: 06-Jul-2018
Document Number: 95653
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPF12L-M3, VS-65APF12L-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
65
UNITS
Maximum average forward current
IF(AV)
TC = 113 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
700
A
Maximum peak one cycle
non-repetitive surge current
IFSM
830
2450
3460
34 600
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.42
4.6
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
65 A, TJ = 25 °C
V
m
V
rt
TJ = 150 °C
VF(TO)
0.9
TJ = 25 °C
0.1
Maximum reverse leakage current
IRM
VR = rated VRRM
TJ = 150 °C
mA
16
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
480
8
UNITS
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
ns
A
IF at 60 Apk
25 A/μs
25 °C
trr
Irr
Qrr
S
t
dir
dt
2.7
μC
Qrr
Typical
0.6
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-40 to +150
°C
Maximum thermal resistance,
RthJC
RthJA
RthCS
DC operation
0.25
40
unction to case
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth, and greased
0.25
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
Case style TO-247AD 2L
Case style TO-247AD 3L
65EPF12L
65APF12L
Revision: 06-Jul-2018
Document Number: 95653
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPF12L-M3, VS-65APF12L-M3
www.vishay.com
Vishay Semiconductors
150
150
140
130
120
110
100
90
180°
120°
90°
RthJC (DC) = 0.25 °C/W
120
60°
DC
30°
Conduction
90
RMS limit
60
Conduction Angle
60°
120°
180°
30
30°
20
90°
Tj = 150°C
80 100
0
0
20
40
60
120
0
10
30
40
50
60
70
Average On-state Current (A)
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
800
RthJC (DC) = 0.25 °C/W
At any rated load condition and with
rated VRRM applied following surge.
700
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction angle
600
500
400
300
DC
60°
120°
60
30°
90°
180°
80
80
1
10
100
0
20
40
100
120
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
900
120
100
80
60
40
20
0
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
800
700
600
500
400
300
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Conduction angle
TJ = 150 °C
20 30
0.01
0.1
1
0
10
40
50
60
70
Pulse Train Duration (s)
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 06-Jul-2018
Document Number: 95653
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPF12L-M3, VS-65APF12L-M3
www.vishay.com
Vishay Semiconductors
1000
100
10
TJ = 25 °C
TJ = 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
600
500
400
300
200
100
0
12 000
IFM = 60 A
TJ = 25 °C
TJ = 25 °C
10 000
8000
6000
4000
2000
0
IFM = 60 A
IFM = 30 A
IFM = 30 A
IFM = 10 A
IFM = 10 A
IFM = 5 A
IFM = 5 A
IFM = 1 A
160
IFM = 1 A
120
0
40
80
120
200
0
40
80
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
1200
25 000
TJ = 150 °C
TJ = 150 °C
1000
800
600
400
200
0
IFM = 60 A
20 000
15 000
10 000
5000
0
IFM = 60 A
IFM = 30 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 10 A
IFM = 5 A
120
IFM = 1 A
IFM = 1 A
160
0
40
80
120
160
200
0
40
80
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 06-Jul-2018
Document Number: 95653
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPF12L-M3, VS-65APF12L-M3
www.vishay.com
Vishay Semiconductors
60
45
40
35
30
25
20
15
10
5
IFM = 60 A
TJ = 25 °C
TJ = 150 °C
IFM = 60 A
50
IFM = 30 A
IFM = 10 A
IFM = 30 A
40
30
IFM = 10 A
IFM = 5 A
20
IFM = 5 A
IFM = 1 A
160
10
0
IFM = 1 A
160
0
0
40
80
120
200
0
40
80
120
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
0.5
Steady state value
(DC operation)
0.1
0.01
0.33
0.25
0.17
0.08
Single pulse
0.001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 06-Jul-2018
Document Number: 95653
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPF12L-M3, VS-65APF12L-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 65
E
P
F
12
L
-M3
1
2
3
4
5
6
7
8
1
2
3
- Vishay Semiconductors product
- Current rating (65 = 65 A)
- Circuit configuration:
E = single, 2 pins
A = single, 3 pins
4
5
- Package:
P = TO-247AD
- Type of silicon:
F = fast recovery rectifier
- Voltage code x 100 = VRRM
- L = long leads
6
7
8
12 = 1200 V
- Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-65EPF12L-M3
VS-65APF12L-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
25
25
500
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
TO-247AD 2L
www.vishay.com/doc?95536
Dimensions
TO-247AD 3L
www.vishay.com/doc?95626
www.vishay.com/doc?95648
www.vishay.com/doc?95007
TO-247AD 2L
Part marking information
TO-247AD 3L
Revision: 06-Jul-2018
Document Number: 95653
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
F P
(Datum B)
F P1
B
A2
A
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1, 2
3
Thermal pad
(5) L1
C
(4)
E1
L
See view B
A
M
M
0.01 D B
View A - A
C
2 x b2
2 x b
2 x e
A1
M
M
0.10 C A
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
0.38
0.38
19.71
13.08
0.51
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.035
0.033
0.815
-
MIN.
15.29
13.46
MAX.
MIN.
MAX.
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.015
0.015
0.776
0.515
0.020
E
E1
e
15.87
-
0.602
0.53
3
5.46 BSC
0.254
20.32
0.215 BSC
0.010
0.800
Ø K
L
b1
b2
b3
c
19.81
3.71
3.56
-
0.780
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
6.98
5.69
5.49
0.169
0.144
0.275
0.224
0.216
c1
D
5.31
4.52
0.209
0.178
3
4
R
D1
D2
S
5.51 BSC
0.217 BSC
1.35
0.053
Notes
(1)
(2)
(3)
(4)
(5)
(6)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
(7)
Revision: 28-May-2018
Document Number: 95536
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
L
A
M
M
0.01 D B
View A - A
See view B
2 x b2
3 x b
C
2 x e
b4
A1
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
20.32
0.215 BSC
0.010
0.800
b1
b2
b3
b4
b5
c
Ø K
L
19.81
3.71
3.56
-
0.780
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
6.98
5.69
5.49
0.169
0.144
0.275
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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