VS-6EWX06FNTRLHM3 [VISHAY]
Hyperfast Rectifier, 6 A FRED Pt®;
| 型号： | VS-6EWX06FNTRLHM3 |
| 厂家： | 
VISHAY |
| 描述： | Hyperfast Rectifier, 6 A FRED Pt® |
| 文件： | 总7页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-6EWX06FNHM3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 6 A FRED Pt®
FEATURES
• Hyperfast recovery time, extremely low Qrr
• 175 °C maximum operating junction temperature
• For PFC CCM operation
2, 4
• Low forward voltage drop
• Low leakage current
1
N/C
3
Anode
• AEC-Q101 qualified
DPAK (TO-252AA)
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
6 A
VR
600 V
1.65 V
14 ns
DESCRIPTION / APPLICATIONS
VF at IF
trr (typ.)
TJ max.
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
175 °C
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
Package
DPAK (TO-252AA)
Single
Circuit configuration
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
TC = 136 °C
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
600
V
6
IFSM
TJ = 25 °C
50
12
A
IFM
TC = 136 °C, f = 20 kHz, d = 50 %
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 6 A
600
-
-
V
-
-
-
-
-
-
2.50
1.65
-
3.1
1.9
20
250
-
Forward voltage
VF
IR
IF = 6 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
-
Junction capacitance
Series inductance
CT
LS
3.5
8
pF
nH
Measured lead to lead 5 mm from package body
-
Revision: 19-Feb-2021
Document Number: 94745
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6EWX06FNHM3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
14
21
-
16
Reverse recovery time
trr
ns
19
-
TJ = 125 °C
27
-
IF = 6 A
dIF/dt = 200 A/μs
TJ = 25 °C
3.0
4.0
28
-
Peak recovery current
IRRM
Qrr
A
TJ = 125 °C
-
VR = 390 V
TJ = 25 °C
-
Reverse recovery charge
nC
TJ = 125 °C
57
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
-
3
°C/W
0.3
g
Approximate weight
Marking device
0.01
oz.
Case style DPAK (TO-252AA)
6EWX06FNH
100
1000
100
10
TJ = 175 °C
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 125 °C
TJ = 75 °C
TJ = 50 °C
1
0.1
TJ = 25 °C
0.01
TJ = 25 °C
0.1
0.001
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 19-Feb-2021
Document Number: 94745
2
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6EWX06FNHM3
Vishay Semiconductors
www.vishay.com
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
30
180
170
160
150
140
130
120
110
IF = 6 A, TJ = 125 °C
25
20
DC
IF = 6 A, TJ = 25 °C
Square wave (D = 0.50)
Rated VR applied
15
See note (1)
10
100
0
2
4
6
8
10
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
16
14
12
140
120
100
80
60
40
20
0
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
10
8
IF = 6 A, TJ = 125 °C
6
4
IF = 6 A, TJ = 25 °C
2
0
0
3
6
9
100
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 19-Feb-2021
Document Number: 94745
3
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6EWX06FNHM3
Vishay Semiconductors
www.vishay.com
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
di(rec)M/dt
0.75 IRRM
diF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) diF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 19-Feb-2021
Document Number: 94745
4
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6EWX06FNHM3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
6
E
W
X
06
FN TRL
H
M3
10
1
2
3
4
5
6
7
8
9
1
-
-
-
Vishay Semiconductors product
Current rating (6 = 6 A)
Circuit configuration:
E = single diode
2
3
-
Package identifier:
4
W = D-PAK
-
-
-
-
X = hyperfast recovery time
Voltage rating (06 = 600 V)
FN = TO-252AA
5
6
7
8
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
H = AEC-Q101 qualified
-
-
9
Environmental digit:
10
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-6EWX06FNHM3
VS-6EWX06FNTRHM3
VS-6EWX06FNTRRHM3
VS-6EWX06FNTRLHM3
75
3000
2000
3000
3000
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
Packaging information
www.vishay.com/doc?95518
www.vishay.com/doc?95033
Revision: 19-Feb-2021
Document Number: 94745
5
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DPAK (TO-252AA)
DIMENSIONS in millimeters and inches
Pad layout
E
A
0.265 (6.74) min.
b3
L3
4
E1
c2
4
Seating
plane
D1
0.245 (6.23) min.
D
H
c
L4
1
3
3
1
2
0.488 (12.40)
0.409 (10.40)
2
L5
Detail “C”
0.089 (2.28) min.
b2
b
e
L1
e1
0.06 (1.524) min.
Detail “C”
Lead tip
Gauge plane
0.093 (2.38)
0.085 (2.18)
L2
A1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
2.29 BSC
H
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
0.035
0.050
0.040
0.060
3
2
c2
D
-
-
5
3
5
3
1.14
0.045
D1
E
6.73
-
0.265
-
E1
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Outline conforms to JEDEC® outline TO-252AA
(2)
(3)
(4)
(5)
Revision: 06-Jun-17
Document Number: 95519
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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