VS-93MT160KS90PBF [VISHAY]
POWER MOD 3PH BRIDGE 55A MTK;
| 型号： | VS-93MT160KS90PBF |
| 厂家： | 
VISHAY |
| 描述： | POWER MOD 3PH BRIDGE 55A MTK |
| 文件： | 总8页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge
(Power Modules), 90 A/110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio, outline for easy connections
to power transistor and IGBT modules
• 4000 VRMS isolating voltage
• UL E78996 approved
MTK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IO
90 A to 110 A
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
VRRM
800 V to 1600 V
MTK
Package
Circuit configuration
Three phase bridge
MAJOR RATINGS AND CHARACTERISTICS
VALUES
90MT.K
VALUES
UNITS
SYMBOL
CHARACTERISTICS
110MT.K
90 (120)
90 (61)
770
110 (150)
90 (57)
950
A
IO
TC
°C
50 Hz
60 Hz
50 Hz
60 Hz
IFSM
I2t
A
810
1000
3000
4500
A2s
2700
4100
I2t
VRRM
TStg
TJ
30 000
45 000
A2s
Range
Range
800 to 1600
-40 to 150
-40 to 150
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM, MAXIMUM
IRRM MAXIMUM
AT TJ = MAXIMUM
mA
VOLTAGE
CODE
NON-REPETITIVE PEAK
TYPE NUMBER
REVERSE VOLTAGE
V
80
800
900
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
VS-90MT..K
VS-110MT..K
10
Revision: 17-Aug-17
Document Number: 94352
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
VALUES
90MT.K
VALUES
110MT.K
PARAMETER
SYMBOL
TEST CONDITIONS
120° rect. conduction angle
UNITS
90 (120)
90 (61)
770
110 (150)
90 (57)
950
A
Maximum DC output current at case
temperature
IO
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
810
1000
800
Maximum peak, one-cycle
forward, non-repetitive surge current
IFSM
A
650
100 % VRRM
reapplied
680
840
Initial
TJ = TJ maximum
3000
2700
2100
1900
30 000
4500
4100
3200
2900
45 000
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
VF(TO)1
VF(TO)2
rf1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
(I > x IF(AV)), TJ maximum
A2s
Low level value of
threshold voltage
0.89
1.05
5.11
0.81
0.99
4.37
V
High level value of threshold voltage
Low level value of forward
slope resistance
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
m
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ maximum
4.64
Ipk = 150 A, TJ = 25 °C
Maximum forward voltage drop
RMS isolation voltage
VFM
1.6
1.4
tp = 400 μs single junction
V
TJ = 25 °C, all terminal shorted
f = 50 Hz, t = 1 s
VISOL
4000
THERMAL AND MECHANICAL SPECIFICATIONS
VALUES
90MT.K
VALUES
110MT.K
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
-40 to 150
°C
DC operation per module
0.21
1.26
0.25
1.47
0.18
1.07
0.21
1.25
DC operation per junction
Maximum thermal resistance,
junction to case
RthJC
120° rect. conduction angle per module
120° rect. conduction angle per junction
°C/W
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and greased
0.03
to heatsink
to terminal
A mounting compound is recommended and the
torque should be rechecked after a period of
3 h to allow for the spread of the compound.
Lubricated threads.
4 to 6
3 to 4
176
Mounting
Nm
g
torque 10 %
Approximate weight
Revision: 17-Aug-17
Document Number: 94352
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
1000
100
10
90MT..K Series
120°
(Rect)
TJ = 25 °C
TJ = 150 °C
+
-
80
~
70
90MT..K Series
Per junction
60
50
1
0
25
50
75
100
125
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Total Output Current (A)
Fig. 1 - Current Ratings Characteristics
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
90MT..K Series
TJ = 150 °C
120°
(Rect.)
0
0
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
800
700
650
600
550
500
450
400
350
300
250
200
Maximum non-repetitive surge current
versus pulse train duration.
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
750
700
650
600
500
450
400
350
300
250
200
150
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
90MT..K Series
90MT..K Series
0.01
0.1
1.0
1
10
100
Pulse Train Duration (s)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94352
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
1000
100
10
110MT..K Series
120°
(Rect.)
TJ = 25 °C
TJ = 150 °C
80
+
-
70
~
110MT..K Series
Per junction
60
50
1
0
20
40
60
80 100 120 140 160
0
1
2
3
4
5
Total Output Current (A)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 6 - Current Ratings Characteristics
450
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
110MT..K Series
TJ = 150 °C
120°
(Rect.)
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Total Output Current (A)
Fig. 8 - Total Power Loss Characteristics
900
800
700
600
500
400
300
200
1000
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
900
800
700
600
500
400
300
200
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated VRRM reapplied
110MT..K Series
110MT..K Series
1
10
100
0.01
0.1
1
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94352
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
10
Steady state value
RthJC = 1.26 K/W
RthJC = 1.07 K/W
(DC operation)
90MT..K Series
1
0.1
110MT..K Series
Per junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristic
ORDERING INFORMATION TABLE
Device code
VS- 11
0
MT 160
K
PbF
1
2
3
4
5
6
1
2
-
-
Vishay Semiconductors product
Current rating code: 9 = 90 A (average)
11 = 110 A (average)
3
4
5
6
-
Three phase diodes bridge
-
-
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
-
PbF = Lead (Pb)-free
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
CIRCUIT CONFIGURATION
+
D
A
B
C
~
E
F
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Revision: 17-Aug-17
Document Number: 94352
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
Screws M. x ꢀ08 length 1ꢀ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
.
ꢀ03
7. ꢀ0.
(ꢀ02 ꢀ0ꢀ1ꢁ
(209. ꢀ0ꢀ2ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
Document Number: 95004
Revision: 27-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Screws M. x ꢀ08 length 1ꢀ
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
7. ꢀ0.
.
ꢀ03
(209. ꢀ0ꢀ2ꢁ
(ꢀ02 ꢀ0ꢀ1ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 95004
Revision: 27-Aug-07
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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