VS-EBU8006HF4 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 80A, 600V V(RRM), Silicon, ROHS COMPLIANT, POWERTAB-1;
| 型号： | VS-EBU8006HF4 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 80A, 600V V(RRM), Silicon, ROHS COMPLIANT, POWERTAB-1 超快软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-EBU8006HF4
Vishay Semiconductors
www.vishay.com
Ultrafast Soft Recovery Diode, 80 A FRED Pt®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• AEC-Q101 qualified
• PowerTab® package
Cathode
Anode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PowerTab®
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
Package
PowerTab®
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
IF(AV)
80 A
600 V
VR
VF at IF
1.53 V
46 ns
trr (typ.)
TJ max.
Diode variation
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
600
80
UNITS
Cathode to anode voltage
Continuous forward current
Single pulse forward current
VR
V
IF(AV)
IFSM
TC = 113 °C
TC = 25 °C
A
750
Operating junction and storage
temperatures
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
600
TYP.
MAX. UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 200 μA
IF = 80 A
-
-
-
-
-
-
-
-
-
1.25
1.13
1.07
-
1.53
V
Forward voltage
VF
IF = 80 A, TJ = 125 °C
IF = 80 A, TJ = 175 °C
VR = VR rated
1.35
1.25
8
0.5
-
μA
mA
pF
Reverse leakage current
IR
TJ = 150 °C, VR = VR rated
VR = 600 V
-
Junction capacitance
Series inductance
CT
LS
39
Measured lead to lead 5 mm from package body
3.5
-
nH
Revision: 16-Jun-15
Document Number: 94805
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EBU8006HF4
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
46
MAX.
UNITS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
36
Reverse recovery time
trr
ns
100
190
10
TJ = 125 °C
IF = 50 A
VR = 200 V
dIF/dt = 200 A/μs
TJ = 25 °C
Peak recovery current
IRRM
A
TJ = 125 °C
17.5
520
1650
TJ = 25 °C
Reverse recovery charge
Qrr
nC
TJ = 125 °C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
RthJC
-
-
0.5
K/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.2
-
-
-
-
5.02
-
g
Weight
0.18
oz.
1.2
(10)
2.4
(20)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style PowerTab®
EBU8006H
Revision: 16-Jun-15
Document Number: 94805
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EBU8006HF4
Vishay Semiconductors
www.vishay.com
1000
1000
100
10
175 °C
150 °C
125 °C
100
10
1
TJ = 175 °C
1
0.1
0.01
25 °C
400
TJ = 125 °C
TJ = 25 °C
0.001
0.0001
0
100
200
300
500
600
0.0
0.5
1.0
1.5
2.0
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.5
D = 0.2
D = 0.1
0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 16-Jun-15
Document Number: 94805
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EBU8006HF4
Vishay Semiconductors
www.vishay.com
180
160
140
120
100
80
250
200
150
100
50
IF = 50 A, 125 °C
DC
I
F = 50 A, 25 °C
60
typical value
40
0
20
40
60
80
100
120
140
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
120
2500
typical value
100
80
60
40
20
0
RMS Limit
2000
1500
1000
500
0
IF = 50 A, 125 °C
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
IF = 50 A, 25 °C
0
10 20 30 40 50 60 70 80 90
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 16-Jun-15
Document Number: 94805
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EBU8006HF4
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
E
B
U
80
06
H
F4
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
-
Vishay Semiconductors product
Single diode
PowerTab®
2
3
4
5
6
7
8
Ultrafast recovery
Current rating (80 = 80 A)
Voltage rating (06 = 600 V)
H = AEC-Q101 qualified
Environmental digit:
F4 = RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-EBU8006HF4
25
375
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
Part marking information
Application note
www.vishay.com/doc?95467
www.vishay.com/doc?95179
Revision: 16-Jun-15
Document Number: 94805
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
PowerTab®
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
1.35 (0.05)
1.20 (0.04)
15.60 (0.61)
14.80 (0.58)
Lead 1
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 2
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
3.09 (0.12)
3.00 (0.11)
1.30 (0.05)
1.10 (0.04)
5.45 REF.
(0.21 REF.)
0.60 (0.02)
0.40 (0.01)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Revision: 08-Jun-15
Document Number: 95240
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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