VS-ETU3006S-M3 [VISHAY]
DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode;型号: | VS-ETU3006S-M3 |
厂家: | VISHAY |
描述: | DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode 超快软恢复二极管 快速软恢复二极管 |
文件: | 总9页 (文件大小:177K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
VS-ETU3006S-M3, VS-ETU3006-1-M3
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Low leakage current
VS-ETU3006S-M3
VS-ETU3006-1-M3
• Compliant to RoHS Directive 2002/95/EC
Base
cathode
2
• Halogen-free according to IEC 61249-2-21
definition
2
• Designed and qualified according to JEDEC-JESD47
DESCRIPTION/APPLICATIONS
Ultralow VF, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
3
1
N/C
3
1
N/C
Anode
Anode
D2PAK
TO-262
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
PRODUCT SUMMARY
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
30A
600 V
VR
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
VF at IF
2 V
trr (typ.)
TJ max.
Diode variation
30 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
MAX.
600
30
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
V
IF(AV)
TC = 113 °C
TC = 25 °C
A
IFSM
200
Operating junction and storage
temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 70 A
600
-
-
V
-
-
-
-
-
-
1.4
1.15
0.02
30
2.0
1.35
30
250
-
Forward voltage
VF
IR
IF = 30 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
20
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Document Number: 93592
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETU3006S-M3, VS-ETU3006-1-M3
Ultrafast Rectifier, 30 A FRED Pt®
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
30
45
-
Reverse recovery time
trr
45
ns
TJ = 125 °C
100
5.6
10
-
IF = 30 A
TJ = 25 °C
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
A
TJ = 125 °C
-
VR = 200 V
TJ = 25 °C
127
580
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
0.95
-
1.4
70
-
°C/W
Thermal resistance,
junction to ambient
Typical socket mount
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and
greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6
(5)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style D2PAK modified
Case style TO-262
ETU3006S
ETU3006-1
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93592
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETU3006S-M3, VS-ETU3006-1-M3
Ultrafast Rectifier, 30 A FRED Pt®
Vishay Semiconductors
1000
1000
100
10
175°C
150°C
125°C
100°C
100
10
1
75°C
0.1
0.01
50°C
25°C
TJ = 175 °C
0.001
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 150 °C
100
10
1
TJ = 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
Forward Voltage Drop-VFM (V)
ReverseVoltage-VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-0
1E+00
t1, Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Document Number: 93592
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETU3006S-M3, VS-ETU3006-1-M3
Ultrafast Rectifier, 30 A FRED Pt®
Vishay Semiconductors
60
50
180
170
160
150
140
130
120
110
100
90
RMS Limit
40
30
20
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
DC
10
0
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
Average Forward Current - IF(AV) (A)
AverageForwardCurrent-IF(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1800
130
120
110
1600
1400
1200
100
IF = 30 A, 125 °C
IF = 30 A, 125 °C
90
80
70
60
1000
800
600
400
200
IF = 30 A, 25 °C
50
40
30
20
IF = 30 A, 25 °C
typical value
typical value
0
100
10
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93592
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETU3006S-M3, VS-ETU3006-1-M3
Ultrafast Rectifier, 30 A FRED Pt®
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93592
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETU3006S-M3, VS-ETU3006-1-M3
Ultrafast Rectifier, 30 A FRED Pt®
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
U
30
06
S
TRL -M3
1
2
3
4
5
6
7
8
9
-
-
Vishay Semiconductors product
1
Circuit configuration
E = Single diode
2
-
-
-
-
-
-
-
T = TO-220
3
4
5
6
7
U = Ultrafast recovery time
Current code (30 = 30 A)
Voltage code (06 = 600 V)
• S = D2PAK
• -1 = TO-262
• None = Tube (50 pieces)
8
-
-
-
• TRL = Tape and reel (left oriented, for D2PAK package)
• TRR = Tape and reel (right oriented, for D2PAK package)
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
9
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
13" diameter reel
VS-ETU3006S-M3
VS-ETU3006-1-M3
VS-ETU3006STRR-M3
VS-ETU3006STRL-M3
50
50
1000
1000
800
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
TO-263AB (D2PAK)
www.vishay.com/doc?95046
Dimensions
TO-262AA
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
TO-263AB (D2PAK)
TO-262AA
Part marking information
Packaging information
TO-263AB (D2PAK)
www.vishay.com
6
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93592
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号:
VS-ETU3006STRL-M3
DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY
VS-ETU3006STRLHM3
Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY
VS-ETU3006STRR-M3
DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY
VS-ETX1506-1-M3
DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
VS-ETX1506STRL-M3
DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3, Rectifier Diode
VISHAY
VS-FA38SA50LCP
Power Field-Effect Transistor, 38A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
VISHAY
VS-FA57SA50LCP
Power Field-Effect Transistor, 57A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
VISHAY
©2020 ICPDF网 联系我们和版权申明