VS-HFA04SD60STRRHM3 [VISHAY]
Ultrasoft recovery;
| 型号： | VS-HFA04SD60STRRHM3 |
| 厂家： | 
VISHAY |
| 描述： | Ultrasoft recovery 超快软恢复二极管 快速软恢复二极管 光电二极管 |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA04SD60SHM3
www.vishay.com
Vishay Semiconductors
HEXFRED®,
Ultrafast Soft Recovery Diode, 4 A
FEATURES
2, 4
• Ultrafast recovery time
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
1
N/C
• Guaranteed avalanche
3
Anode
TO-252AA (D-PAK)
• Specified at operating temperature
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
TO-252AA (D-PAK)
4 A
IF(AV)
BENEFITS
VR
600 V
• Reduced RFI and EMI
VF at IF
1.4 V
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
trr typ.
17 ns
TJ max.
Diode variation
150 °C
Single die
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
TC = 100 °C
4
IFSM
25
16
A
Repetitive peak forward current
Maximum power dissipation
IFRM
TC = 116 °C
TC = 100 °C
PD
10
W
Operating junction and storage temperatures
TJ, TStg
-55 to +150
°C
Revision: 15-Jul-15
Document Number: 94756
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
600
-
-
IF = 4 A
IF = 8 A
-
-
-
-
-
-
-
1.5
1.8
1.4
0.17
44
1.8
2.2
1.7
3.0
300
8
V
Forward voltage
See fig. 1
VF
IF = 4 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IR
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Junction capacitance
Series inductance
CT
LS
4
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μA, VR = 30 V
TJ = 25 °C
MIN.
TYP.
17
MAX.
-
UNITS
-
-
-
-
-
-
-
-
-
Reverse recovery time
trr
28
42
57
5.2
6.7
60
105
-
ns
TJ = 125 °C
38
TJ = 25 °C
2.9
3.7
40
Peak recovery current
IRRM
A
IF = 4 A
dIF/dt = 200 A/μs
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = 200 V
Reverse recovery charge
Qrr
nC
70
280
235
Rate of fall of recovery current dI(rec)M/dt
A/μs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-55
-
150
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
5.0
80
°C/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf ⋅ in)
Mounting torque
Marking device
-
Case style TO-252AA (D-PAK)
HFA04SD60SH
Revision: 15-Jul-15
Document Number: 94756
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SHM3
www.vishay.com
Vishay Semiconductors
100
10
1
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.01
0.001
0.1
0
100
200
300
400
500
0
1
2
3
4
5
6
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t2
0.1
Single pulse
Notes:
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Jul-15
Document Number: 94756
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SHM3
www.vishay.com
Vishay Semiconductors
50
40
30
20
200
180
160
140
120
100
80
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
IF = 8 A
IF = 4 A
60
VR = 200 V
TJ = 125 °C
TJ = 25 °C
40
20
100
100
1000
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
14
1000
IF = 8 A
IF = 4 A
12
10
8
IF = 8 A
IF = 4 A
6
4
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
2
100
100
0
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 15-Jul-15
Document Number: 94756
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SHM3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Jul-15
Document Number: 94756
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- HF
A
04
SD
60
S
TR
H
M3
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (04 = 4 A)
D-PAK
Voltage rating (60 = 600 V)
S = D-PAK
TR = tape and reel
R = tape and reel (right oriented)
L = tape and reel (left oriented)
H = AEC-Q101 qualified
Environmental digit:
9
-
-
10
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-HFA04SD60SHM3
VS-HFA04SD60STRHM3
VS-HFA04SD60STRRHM3
VS-HFA04SD60STRLHM3
75
3000
2000
3000
3000
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
Packaging information
www.vishay.com/doc?95518
www.vishay.com/doc?95033
Revision: 15-Jul-15
Document Number: 94756
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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