VS-HFA08TB120STRLP [VISHAY]
Ultrafast and ultrasoft recovery;
| 型号： | VS-HFA08TB120STRLP |
| 厂家： | 
VISHAY |
| 描述： | Ultrafast and ultrasoft recovery |
| 文件： | 总8页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA08TB120SPbF
www.vishay.com
Vishay Semiconductors
HEXFRED®,
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-263AB (D2PAK)
Base
cathode
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
1
N/C
3
Anode
• Reduced parts count
DESCRIPTION
VS-HFA08TB120S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
TO-263AB (D2PAK)
IF(AV)
8 A
1200 V
2.4 V
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
28 ns
150 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
1200
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
8
130
IFSM
IFRM
A
Maximum repetitive forward current
32
TC = 25 °C
73.5
Maximum power dissipation
PD
W
TC = 100 °C
29
Operating junction and storage temperature range
TJ, TStg
-55 to +150
°C
Revision: 26-Feb-16
Document Number: 94046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VS-HFA08TB120SPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 8.0 A
IF = 16 A
-
-
-
-
-
-
-
2.6
3.4
2.4
0.31
135
11
3.3
4.3
3.1
10
V
Maximum forward voltage
VFM
IF = 8.0 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
μA
TJ = 125 °C, VR = 0.8 x VR rated
1000
20
Junction capacitance
Series inductance
CT
LS
VR = 200 V
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
28
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
-
-
Reverse recovery time
trr1
63
95
ns
trr2
TJ = 125 °C
106
4.5
6.2
140
335
133
85
160
8.0
11
IRRM1
IRRM2
Qrr1
TJ = 25 °C
Peak recovery current
A
IF = 8.0 A
TJ = 125 °C
dIF/dt = 200 A/μs
R = 200 V
TJ = 25 °C
380
880
-
V
Reverse recovery charge
nC
Qrr2
TJ = 125 °C
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
Peak rate of fall of
recovery current during tb
A/μs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
1.7
40
K/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
Marking device
Case style TO-263AB (D2PAK)
HFA08TB120S
Revision: 26-Feb-16
Document Number: 94046
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB120SPbF
www.vishay.com
Vishay Semiconductors
100
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
1
0.01
0
2
4
6
8
10
0
300
600
900
1200
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
100
TJ = 25 °C
10
1
1
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1
t2
0.1
Notes:
Single pulse
(thermal response)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 26-Feb-16
Document Number: 94046
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB120SPbF
www.vishay.com
Vishay Semiconductors
160
140
120
100
80
1200
1000
800
600
400
200
0
VR = 160 V
TJ = 125 °C
TJ = 25 °C
VR = 160 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
IF = 8 A
IF = 4 A
60
40
20
100
1000
100
1000
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
20
1000
VR = 160 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
16
12
8
IF = 8 A
IF = 4 A
100
VR = 160 V
TJ = 125 °C
TJ = 25 °C
4
0
100
10
100
1000
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
dIF/dt (A/μs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 26-Feb-16
Document Number: 94046
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB120SPbF
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Feb-16
Document Number: 94046
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB120SPbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- HF
A
08
TB 120
S
TRL PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Process designator: A = electron irradiated
Current rating (08 = 8 A)
Package outline (TB = TO-220, 2 leads)
Voltage rating (120 = 1200 V)
S = D2PAK
•
•
•
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
-
•
•
PbF = lead (Pb)-free, for tube packaged
9
P = lead (Pb)-free, for tape and reel packaged
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Part marking information
Packaging information
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-HFA08TB120SPBF
VS-HFA08TB120STRRP
VS-HFA08TB120STRLP
50
1000
800
Antistatic plastic tube
13" diameter reel
13" diameter reel
800
800
800
Revision: 26-Feb-16
Document Number: 94046
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
Document Number: 91000
1
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