VS-HFA16TA60CSTRRP [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2;
| 型号： | VS-HFA16TA60CSTRRP |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2 功效 二极管 |
| 文件： | 总8页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA16TA60CSPbF
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
2
3
1
• Material categorization:
TO-263AB (D2PAK)
for definitions of compliance please see
www.vishay.com/doc?99912
Base
common
cathode
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
2
1
3
Common
cathode
• Reduced parts count
Anode
Anode
DESCRIPTION
VS-HFA16TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16TA60CS is especially
well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16TA60CS is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package
TO-263AB (D2PAK)
2 x 8 A
IF(AV)
VR
600 V
VF at IF
1.4 V
trr typ.
18 ns
TJ max.
Diode variation
150 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
V
per leg
per device
8
Maximumcontinuousforwardcurrent
IF
TC = 100 °C
16
A
Single pulse forward current
IFSM
IFRM
60
Maximum repetitive forward current
24
36
TC = 25 °C
Maximum power dissipation
PD
W
TC = 100 °C
14
Operating junction and storage temperature range
TJ, TStg
-55 to +150
°C
Revision: 09-May-16
Document Number: 94059
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 8.0 A
IF = 16 A
-
-
-
-
-
-
-
1.4
1.7
1.4
0.3
100
10
1.7
2.1
1.7
5.0
500
25
V
Maximum forward voltage
VFM
See fig. 1
IF = 8.0 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
trr
-
-
-
-
-
-
-
18
-
Reverse recovery time
See fig. 5, 6 and 16
trr1
37
55
ns
trr2
TJ = 125 °C
55
90
IRRM1
IRRM2
Qrr1
TJ = 25 °C
3.5
4.5
65
5.0
8.0
138
360
Peak recovery current
See fig. 7 and 8
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 8.0 A
dIF/dt = 200 A/μs
Reverse recovery charge
See fig. 9 and 10
nC
V
R = 200 V
Qrr2
124
Peak rate of fall of recovery
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
240
210
-
-
current during tb
See fig. 11 & 12
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Junction to case,
single leg conducting
-
-
-
-
-
-
3.5
1.75
80
RthJC
Junction to case,
K/W
both legs conducting
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
2
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf in)
Mounting torque
Marking device
-
Case style TO-263AB (D2PAK)
HFA16TA60CS
Revision: 09-May-16
Document Number: 94059
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
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Vishay Semiconductors
100
10
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
1
0.1
0.01
TJ = 25 °C
0.1
0.4
0.001
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1
t2
0.1
Single pulse
(thermal response)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 09-May-16
Document Number: 94059
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
www.vishay.com
Vishay Semiconductors
80
60
40
20
0
500
400
300
200
100
0
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
20
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
16
12
8
IF = 16 A
IF = 8 A
IF = 4 A
IF = 16 A
IF = 8 A
IF = 4 A
1000
4
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
100
100
1000
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
dIF/dt (A/μs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
Revision: 09-May-16
Document Number: 94059
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 09-May-16
Document Number: 94059
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- HF
A
16
TA
60
C
S
TRL PbF
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Process designator: A = electron irradiated
Current rating (16 = 16 A)
Package outline (TA = TO-220, 3 leads)
Voltage rating (60 = 600 V)
Circuit configuration (C = common cathode)
S = D2PAK
•
•
•
•
•
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
PbF = lead (Pb)-free, for tube packaged
-
10
P = lead (Pb)-free, for tape and reel packaged
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
www.vishay.com/doc?95689
Part marking information
Packaging information
SPICE model
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-HFA16TA60CSPBF
VS-HFA16TA60CSTRRP
VS-HFA16TA60CSTRLP
50
1000
800
800
800
800
13" diameter reel
Revision: 09-May-16
Document Number: 94059
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
Document Number: 91000
1
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