VS-HFA70EA120 [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 35A, 1200V V(RRM), Silicon,;
| 型号： | VS-HFA70EA120 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 35A, 1200V V(RRM), Silicon, 超快软恢复二极管 快速软恢复二极管 局域网 光电二极管 |
| 文件： | 总6页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA70EA120
Vishay Semiconductors
www.vishay.com
HEXFRED®
Ultrafast Soft Recovery Diode, 70 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
SOT-227
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
This SOT-227 modules with HEXFRED® rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
VR
1200 V
2.2 V
VF (typical)
trr (typical)
48 ns
I
F(DC) at TC, per module
70 A at 121 °C
SOT-227
Package
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 121 °C
MAX.
1200
35
UNITS
Cathode to anode voltage
VR
IF
V
Continuous forward current, per leg
Single pulse forward current
A
IFSM
TJ = 25 °C
350
TC = 25 °C
357
Maximum power dissipation, per leg
RMS isolation voltage
PD
W
TC = 100 °C
143
VISOL
Any terminal to case, t = 1 minute
2500
V
Operating junction and storage
temperature range
TJ, TStg
-55 to +150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 30 A
-
-
-
-
-
-
-
-
-
2.2
2.8
3.0
4.0
-
IF = 60 A
V
IF = 30 A, TJ = 125 °C
IF = 60 A, TJ = 125 °C
IF = 30 A, TJ = 150 °C
IF = 60 A, TJ = 150 °C
VR = VR rated
2.13
2.70
2.04
2.65
2.0
Forward voltage, per leg
VFM
-
-
-
75
5
μA
Reverse leakage current, per leg
IRM
TJ = 125 °C, VR = VR rated
TJ = 150 °C, VR = VR rated
1.6
mA
5
10
Revision: 05-Jan-18
Document Number: 94747
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70EA120
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
48
-
-
-
-
-
-
-
-
Reverse recovery time, per leg
trr
145
218
13
ns
TJ = 125 °C
IF = 50 A
TJ = 25 °C
Peak recovery current, per leg
IRRM
dIF/dt = - 200 A/μs
TJ = 125 °C
VR = 200 V
TJ = 25 °C
A
19
910
1920
27
Reverse recovery charge, per leg
Junction capacitance, per leg
Qrr
CT
nC
pF
TJ = 125 °C
VR = 1200 V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
0.35
UNITS
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
-
-
-
-
-
-
-
-
RthJC
0.175
-
°C/W
RthCS
Flat, greased surface
0.05
30
-
Weight
-
g
Torque to terminal
Torque to heatsink
1.1 (9.7)
1.8 (15.9)
Nm (lbf.in)
Nm (lbf.in)
Mounting torque
Case style
-
SOT-227
10 000
1000
100
10
1000
TJ = 150 °C
TJ = 125 °C
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
10
TJ = 25 °C
0.1
0.01
1
0
200
400
600
800
1000 1200
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 05-Jan-18
Document Number: 94747
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70EA120
Vishay Semiconductors
www.vishay.com
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
0.1
t1
t2
Notes:
1. Duty factor D = t1/t2
DC
2. Peak TJ = PDM x ZthJC + TC
0.01
0.0001
10
0.001
0.1
1
0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
300
250
200
150
175
150
125
100
75
IF = 50 A
VR = 200 V
TJ = 125 °C
DC
Square wave (D = 0.50)
80 % rated VR applied
TJ = 25 °C
50
100
25
0
50
100
0
20
40
60
80
100
120
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
I
F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
200
3000
IF = 50 A
VR = 200 V
2500
2000
1500
1000
500
150
100
50
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
TJ = 125 °C
TJ = 25 °C
DC
0
0
0
20
40
60
80
100
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 05-Jan-18
Document Number: 94747
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70EA120
Vishay Semiconductors
www.vishay.com
40
30
20
10
0
IF = 50 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
1000
dIF/dt (A/µs)
Fig. 9 - Typical Peak Recovery Current vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
di(rec)M/dt
0.75 IRRM
diF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) diF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 05-Jan-18
Document Number: 94747
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70EA120
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- HF
A
70
E
A
120
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Process designator (A = electron irradiated)
Average current (70 = 70 A)
Circuit configuration (two separate diodes, antiparallel pin-out)
Package indicator (SOT-227 standard insulated base)
Voltage rating (120 = 1200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION
CIRCUIT DRAWING
CODE
Lead Assignment
4
3
4
3
2
Two separate
diodes,
antiparallel pin-out
E
1
1
2
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95423
www.vishay.com/doc?95425
Dimensions
Part marking information
Revision: 05-Jan-18
Document Number: 94747
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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