VS-MBRD660CT-M3 [VISHAY]
High Performance Schottky Rectifier, 2 x 3 A;
| 型号： | VS-MBRD660CT-M3 |
| 厂家： | 
VISHAY |
| 描述： | High Performance Schottky Rectifier, 2 x 3 A |
| 文件： | 总7页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-MBRD650CT-M3, VS-MBRD660CT-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 3 A
FEATURES
• Low forward voltage drop
Base
common
cathode
4
• Guard ring for enhanced ruggedness and long
term reliability
• Popular DPAK outline
• Center tap configuration
• Small foot print, surface mountable
• High frequency operation
2
Common
cathode
DPAK (TO-252AA)
1
3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Anode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IF(AV)
2 x 3 A
50 V, 60 V
0.65 V
The VS-MBRD650CT-M3, VS-MBRD660CT-M3 surface
mount, center tap, Schottky rectifier series has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
VR
VF at IF
I
RM typ.
15 mA at 125 °C
150 °C
TJ max.
EAS
6 mJ
Package
DPAK (TO-252AA)
Common cathode
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
6
UNITS
Rectangular waveform
A
V
50/60
490
tp = 5 μs sine
A
VF
3 Apk, TJ = 125 °C (per leg)
Range
0.65
V
TJ
-40 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-MBRD650CT-M3
50
VS-MBRD660CT-M3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
60
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 128 °C, rectangular waveform
VALUES
UNITS
Maximum average forward
current
See fig. 5
per leg
3.0
IF(AV)
per device
6
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 1 A, L = 12 mH
Following any rated load
condition and with rated
490
75
6
IFSM
VRRM applied
Non-repetitive avalanche energy per leg
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Repetitive avalanche current per leg
0.6
Revision: 07-May-2020
Document Number: 93325
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRD650CT-M3, VS-MBRD660CT-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.7
UNITS
3 A
TJ = 25 °C
6 A
0.9
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
3 A
0.65
0.85
0.1
TJ = 125 °C
6 A
TJ = 25 °C
TJ = 125 °C
TJ = 125 °C
(1)
Maximum reverse leakage current per leg
IRM
VR = Rated VR
VR = Rated VR
mA
30
(1)
Typical reverse leakage current
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
IRM
15
mA
pF
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
145
5.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
-40 to +150
°C
per leg
6
3
Maximum thermal resistance,
junction to case
DC operation
See fig. 4
RthJC
per
device
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
80
0.3
g
Approximate weight
Marking device
0.01
oz.
MBRD650CT
Case style DPAK (TO-252AA)
MBRD660CT
Note
dPtot
1
(2)
------------- < ------------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
Revision: 07-May-2020
Document Number: 93325
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRD650CT-M3, VS-MBRD660CT-M3
www.vishay.com
Vishay Semiconductors
10
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = 75 °C
1
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
50
0
20
30
40
60
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
1000
100
10
TJ = 25 °C
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
PDM
1
t1
D = 0.75
D = 0.50
t2
D = 0.33
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
D = 0.25
D = 0.20
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 07-May-2020
Document Number: 93325
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRD650CT-M3, VS-MBRD660CT-M3
www.vishay.com
Vishay Semiconductors
160
150
140
130
120
110
100
3.0
2.5
2.0
1.5
1.0
RMS limit
DC
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (D = 0.50)
80 % rated VR applied
0.5
0
See note (1)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
0
1
2
3
4
5
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
100
At any rated load condition
and with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 07-May-2020
Document Number: 93325
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRD650CT-M3, VS-MBRD660CT-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
D
6
60
CT TR -M3
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
Vishay Semiconductors product
Schottky MBR series
D = DPAK (TO-252AA)
Current rating (6 = 6 A)
Voltage ratings
1
2
3
4
5
6
7
50 = 50 V
60 = 60 V
CT = center tap (dual)
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
Environmental digit:
8
-
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-MBRD650CT-M3
75
3000
2000
3000
3000
3000
2000
3000
3000
VS-MBRD650CTTR-M3
VS-MBRD650CTTRL-M3
VS-MBRD650CTTRR-M3
VS-MBRD660CT-M3
2000
3000
3000
75
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
VS-MBRD660CTTR-M3
VS-MBRD660CTTRL-M3
VS-MBRD660CTTRR-M3
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
Packaging information
www.vishay.com/doc?95176
www.vishay.com/doc?95033
Revision: 07-May-2020
Document Number: 93325
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
MIN.
M
C A B
b3
0.010
c2
(6.74)
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
MIN.
B
Seating
plane
D1
(6.23)
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
Detail “C”
(2) L5
A
0.06
MIN.
b
0.010
c
(1.524)
b2
C A B
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
C
Lead tip
(7)
C
Gauge
plane
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Dimension b1 and c1 applied to base metal only
(6)
(7)
(8)
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
相关型号：
VS-MBRD660CTPBF
DIODE 60 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode
VISHAY
VS-MBRD660CTTRPBF
DIODE 60 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode
VISHAY
VS-MBRD660CTTRR-M3
DIODE 60 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode
VISHAY
VS-MBRD660CTTRRPBF
DIODE 60 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode
VISHAY
VS-MBRS1100TRPBF
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN
VISHAY
VS-MBRS120TRPBF
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN
VISHAY
VS-MBRS130-M3/5BT
Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon, SMB, SIMILAR TO DO-214AA, 2 PIN
VISHAY
VS-MBRS130LTRPBF
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明