VS-MURB1620CT-1HM3 [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-262AA,;
| 型号： | VS-MURB1620CT-1HM3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-262AA, 超快恢复二极管 快速恢复二极管 |
| 文件： | 总10页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 8 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
2
1
• 175 °C operating junction temperature
3
3
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
2
1
TO-263AB (D2PAK)
TO-262AA
• AEC-Q101 qualified
Base
common
cathode
Base
common
cathode
• Meets JESD 201 class 1 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
2
DESCRIPTION / APPLICATIONS
1
2
3
1
2
3
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Anode Common Anode
cathode
VS-MURB1620CTHM3
Anode Common Anode
cathode
VS-MURB1620CT-1HM3
1
2
1
2
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
2 x 8 A
200 V
VR
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VF at IF
0.895 V
t
rr (typ)
19 ns
TJ max.
175 °C
Diode variation
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
200
UNITS
Peak repetitive reverse voltage
VRRM
V
per leg
total device
8.0
Average rectified forward current
IF(AV)
Rated VR, TC = 150 °C
Rated VR, square wave, 20 kHz, TC = 150 °C
16
A
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
IFSM
IFM
100
16
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
VBR
VR
,
Breakdown voltage, blocking voltage
IR = 100 μA
IF = 8 A
200
-
-
-
-
-
0.975
V
Forward voltage
VF
IF = 8 A, TJ = 150 °C
R = VR rated
-
0.895
V
-
-
5
TJ = 150 °C, VR = VR rated
VR = 200 V
-
-
-
250
Reverse leakage current
IR
μA
25
8.0
-
-
-
-
Junction capacitance
Series inductance
CT
LS
Measured lead to lead 5 mm from package body
IR = 100 μA
-
pF
nH
200
Revision: 10-Jul-15
Document Number: 94852
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
19
-
-
-
-
-
-
-
Reverse recovery time
trr
20
ns
TJ = 125 °C
34
IF = 8 A
dIF/dt = 200 A/μs
TJ = 25 °C
1.7
4.2
23
Peak recovery current
IRRM
A
TJ = 125 °C
V
R = 160 V
TJ = 25 °C
Reverse recovery charge
Qrr
nC
TJ = 125 °C
75
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
-
-
3.0
50
-
Thermal resistance,
junction to ambient per leg
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-263AB (D2PAK)
Case style TO-262AA
MURB1620CTH
MURB1620CT-1H
100
10
1
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
TJ = 100 °C
0.1
0.01
0.001
TJ = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
50
100
150
200
250
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 10-Jul-15
Document Number: 94852
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 25 °C
10
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
t1
t2
Single pulse
(thermal resistance)
D = 0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
170
160
150
140
130
10
8
DC
6
RMS limit
D = 0.01
4
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
Square wave (D = 0.50)
Rated VR applied
2
See note (1)
0
0
3
6
9
12
0
3
6
9
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 10-Jul-15
Document Number: 94852
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
60
50
40
30
20
10
200
VR = 160 V
TJ = 125 °C
TJ = 25 °C
VR = 160 V
TJ = 125 °C
IF = 30 A
TJ = 25 °C
160
IF = 15 A
IF = 8 A
IF = 30 A
IF = 15 A
IF = 8 A
120
80
40
0
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 94852
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MUR
B
16
20
CT
-1
L
H
M3
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
Ultrafast MUR series
B = D2PAK/TO-262
Current rating (16 = 16 A)
Voltage rating (20 = 200 V)
CT = center tap (dual)
None = D2PAK
-1 = TO-262
-
8
None = tube (50 pieces)
L = tape and reel (left oriented, for D2PAK package)
R = tape and reel (right oriented, for D2PAK package)
H = AEC-Q101 qualified
9
-
-
10
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
13" diameter reel
VS-MURB1620CTHM3
VS-MURB1620CT-1HM3
VS-MURB1620CTLHM3
VS-MURB1620CTRHM3
50
50
1000
1000
800
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
TO-263AB (D2PAK)
www.vishay.com/doc?95046
Dimensions
TO-262AA
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
TO-263AB (D2PAK)
TO-262AA
Part marking information
Packaging information
TO-263AB (D2PAK)
Revision: 10-Jul-15
Document Number: 94852
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Part Marking Information
www.vishay.com
Vishay Semiconductors
TO-262
Example: This is a xxxxxxx-1 (1) with
assembly lot code AC,
Part number
xxxxxxx-1 (1)
assembled on WW 19, 2001
in the assembly line ”X”
V
ZYWWX
C
A
Product version (optional):
Z (replaced according below table)
Date code:
Assembly
lot code
Year 1 = 2001
Week 19
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant and termination lead (Pb)-free
Halogen-free, RoHS-compliant and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95443
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Part Marking Information
www.vishay.com
Vishay Semiconductors
D2PAK
Example: This is a xxxxxx (1) with
assembly lot code AC,
Part number
xxxxxx (1)
assembled on WW 02, 2010
V
ZYWWX
C
Product version (optional):
Z (replaced according below table)
Date code:
A
Assembly
lot code
Year 0 = 2010
Week 02
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant, and termination lead (Pb)-free
Halogen-free, RoHS-compliant, and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95444
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2
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