VS-SD403C14S15C [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 430A, 1400V V(RRM), Silicon, DO-200AA,;
| 型号： | VS-SD403C14S15C |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 430A, 1400V V(RRM), Silicon, DO-200AA, 软恢复二极管 快速软恢复二极管 高压大功率快速软恢复电源 高压大电源 高功率电源 |
| 文件： | 总8页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 430 A
FEATURES
• High power FAST recovery diode series
• 1.0 µs to 1.5 µs recovery time
• High voltage ratings up to 1600 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC® DO-200AA
• Maximum junction temperature 125 °C
DO-200AA
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
IF(AV)
430 A
Package
DO-200AA
Single diode
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
430
UNITS
A
°C
A
IF(AV)
Ths
Ths
55
675
IF(RMS)
IFSM
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
6180
A
6470
191
I2t
kA2s
175
VRRM
trr
400 to 1600
1.0 to 1.5
25
V
μs
TJ
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE PEAK
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
04
08
10
12
14
16
400
800
500
900
VS-SD403C..S10C
1000
1200
1400
1600
1100
1300
1500
1700
35
VS-SD403C..S15C
Revision: 15-Apr-14
Document Number: 93175
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
430 (210)
55 (75)
675
UNITS
A
Maximum average forward current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
°C
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
6180
6470
5200
5445
191
No voltage
reapplied
A
Maximum peak, one-cycle ,
non-repetitive forward current
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ
maximum
No voltage
reapplied
175
Maximum I2t for fusing
I2t
kA2s
135
100 % VRRM
reapplied
123
Maximum I2√t for fusing
I2√t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
1910
1.00
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
V
1.20
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
0.56
mΩ
rf2
0.70
VFM
Ipk = 1350 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
1.83
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
IFM
Ipk
CODE
trr
trr AT 25 % IRRM
(μs)
dI/dt
(A/μs)
trr AT 25 % IRRM
SQUARE
PULSE
(A)
Vr
Qrr
Irr
(V)
(μC)
(A)
(μs)
t
dir
dt
Qrr
IRM(REC)
S10
S15
1.0
1.5
2.4
2.9
52
90
33
44
750
25
- 30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.16
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
0.08
Mounting force, 10 %
Approximate weight
Case style
4900 (500)
70
N (kg)
g
See dimensions - link at the end of datasheet
DO-200AA
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.010
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.011
0.013
0.016
0.024
0.042
0.008
0.013
0.018
0.025
0.042
0.008
0.013
0.018
0.025
0.042
0.012
0.016
TJ = TJ maximum
K/W
60°
0.024
30°
0.042
Note
•
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
Document Number: 93175
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD403C..C Series
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1 3 0
1 2 0
1 1 0
1 0 0
9 0
1 3 0
1 2 0
1 1 0
1 0 0
9 0
SD 4 03C ..C Se rie s
S D 403C ..C S eries
(S in g le Sid e C oo le d )
thJ- hs
(D ou b le Sid e C o ole d )
R
(D C ) = 0.16 K /W
R
(D C ) = 0.08 K /W
thJ-h s
C ondu ction Period
C onduction An gle
8 0
7 0
6 0
1 80°
90°
8 0
60°
30°
5 0
90°
60°
1 20°
30 °
2 00
180°
5 00
1 20°
D C
7 0
4 0
0
50
1 0 0
1 50
2 00
2 50
0
1 0 0
30 0
4 00
6 0 0
7 00
A ve ra g e F orw a r d C u rre n t (A )
A vera g e F orw a r d C u rre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
800
700
600
500
400
300
200
100
0
1 3 0
1 2 0
1 1 0
1 0 0
90
S D 403C ..C Se rie s
(S in gle Sid e C oo led )
180°
120°
90°
R
(D C ) = 0.16 K /W
thJ-h s
60°
30°
RMS Limit
C ondu ction Period
80
70
60
50
30 °
C ondu ction Angle
60°
9 0°
1 20°
SD403C..C Series
= 125°C
T
J
D C
180 °
2 50
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
0
5 0
1 0 0
1 5 0
20 0
30 0
35 0
Ave ra g e F or w a rd C u rr en t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
1 10 0
130
120
110
100
90
SD403C..C Series
1 00 0
90 0
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
D C
180°
120°
90°
(Double Side Cooled)
R
(DC) = 0.08 K/W
th J-hs
60°
30°
C ond uction Angle
RM S Lim it
80
30°
C ondu ction Period
SD 40 3C ..C S er ies
60°
70
90°
120°
180°
60
T
=
125° C
J
50
0
1 00
20 0
3 00
4 0 0
5 00
60 0
7 00
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
A ve ra g e F o rw a rd C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Apr-14
Document Number: 93175
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD403C..C Series
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1
6 00 0
5 50 0
5 00 0
4 50 0
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
A t A n y R a te d Lo a d C on d itio n A n d W ith
R a te d
V
A p p lied Fo llo w in g S u rg e.
RR M
SD 403 C ..C S eries
In itia l T
= 125° C
J
@
@
60 H z 0.0 083
s
s
50 H z 0.0 100
0 .1
S te a d y Sta te V a lu e
0.16 K /W
(S in g le Sid e C oo le d )
0.08 K /W
R
=
thJ-hs
0. 01
0 .0 01
R
=
thJ- hs
(D o ub le S id e C o ole d )
S D 403 C ..C S eries
(D C O p e ra tio n )
0 .0 01
0 .01
0 .1
1
10
10 0
1
1 0
1 00
Num ber Of Equ al Amplitud e Ha lf Cycle C urrent Pulses (N)
S q u a re W a ve P u lse D u ra tion (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 1 - Thermal Impedance ZthJ-hs Characteristics
2.8
7000
Maximum Non Repetitive Surge Current
SD 4 03C ..S10C Se ries
Versus Pulse Train D uration.
T
=
1 25 ° C ; V
= 30 V
r
J
2.6
2.4
2.2
6000
5000
4000
3000
2000
1000
Initial T = 125°C
J
No Voltage Reapplied
I
= 750 A
FM
Rated V
Reapplied
RR M
Squa re Pulse
400 A
200 A
2
1.8
1.6
SD 403C..C Series
10
100
0.01
0.1
Pulse Train Duration (s)
1
Rate Of Fall Of Forw ard Current - d i/dt (A/µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Recovery Time Characteristics
14 0
10000
13 0
12 0
11 0
10 0
9 0
I
= 7 50 A
FM
Squa re Pulse
T
= 25 °C
J
T
= 125 °C
J
400 A
1000
100
10
8 0
200 A
7 0
6 0
SD403C ..C Ser ie s
5 0
4 0
SD 40 3C ..S10 C Se rie s
125 ° C ; 3 0V
3 0
T
=
V
=
r
J
2 0
1 0
0
1
2
3
4
5
6
7
0
20
40
6 0
80
100
In stan ta n eo us Forw ar d V o lta ge (V )
R ate Of Fa ll Of Forw ard C urrent - di/dt (A/µs)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Recovery Charge Characteristics
Revision: 15-Apr-14
Document Number: 93175
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD403C..C Series
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Vishay Semiconductors
90
170
160
150
140
130
120
110
100
90
I
= 75 0 A
FM
I
= 750 A
FM
Sq uare Pulse
80
Squa re Pu lse
400 A
200 A
70
60
50
400 A
200 A
40
30
80
70
SD403C..S10C Series
SD 40 3C ..S15C Se rie s
20
10
T
= 125°C; V = 30V
r
60
T
=
12 5 ° C ; V
=
30V
J
r
J
50
0
2 0
40
60
8 0
10 0
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forw ard C urrent - d i/dt (A/µs)
Rate Of Fall Of Forw ard C urrent - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics
Fig. 14 - Recovery Charge Characteristics
3.5
130
S D 403C ..S1 5C S erie s
I
=
750 A
120
110
100
90
FM
T
=
125 °C ; V
= 30V
r
J
Squ are Pu lse
3
2.5
2
I
=
750 A
FM
400 A
Sq uare Pulse
80
70
200 A
60
400 A
200 A
50
40
30
SD 4 03C ..S15 C S erie s
T
=
12 5 °C ; V
= 30V
J
r
20
10
1.5
1 0 20 3 0 40 5 0 60 70 80 9 0 10 0
1 0
10 0
R ate O f Fa ll Of Forw ard C urrent - di/dt (A/µs)
Rate Of Fall Of Forw ard C urren t - di/d t (A/µs)
Fig. 13 - Recovery Time Characteristics
Fig. 15 - Recovery Current Characteristics
1E 4
1E 3
1E 2
1E 1
20 jou les p er p ulse
20 joules p er pulse
10
10
4
4
2
1
2
1
0.4
0.4
0.2
0.2
0.1
0.04
0.02
0.01
0.1
0.04
SD403C..S10C Series
Trapezoidal Pulse
TJ = 1 25°C, VRRM= 800V
SD403C ..S10C S eries
Sinu soidal Pulse
TJ = 125°C , VRRM= 800V
d v/d t = 10 00V /µs
tp
d v/dt = 1000V/µs ; d i/dt= 50A/µs
tp
1E1
1 E2
1E3
1E4
1E 1
1 E2
1E3
1E 4
P ulse B a sew id th (µ s)
P u lse B a se w id th (µ s)
Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics
Revision: 15-Apr-14
Document Number: 93175
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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1E4
1E3
1E2
1E1
20 joules per pu lse
20 joules per pulse
10
10
4
4
2
2
1
1
0.4
0.2
0.4
0.2
0.1
0.1
0.04
0.02
SD403C..S15C Series
Trapezoid al Pulse
SD403. .S15C Series
Sinu soidal Pu lse
TJ
= 125°C, V RRM= 11 20V
TJ = 125°C , VRRM= 1120V
tp
d v/dt = 1000V/µs ; di/dt= 50A/µ s
tp
dv/d t = 1000V/µ s
1 E1
1 E 2
1 E 3
1 E4
1E1
1 E2
1 E3
1 E4
P u lse Ba sew id th (µ s)
Pu lse Ba se w id th (µ s)
Fig. 17 - Maximum Total Energy Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
VS- SD
40
3
C
16 S15
C
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
Diode
Essential part number
3 = Fast recovery
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
C = PUK case DO-200AA
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95248
Revision: 15-Apr-14
Document Number: 93175
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Outline Dimensions
Vishay Semiconductors
DO-200AA
DIMENSIONS in millimeters (inches)
3.5 (0.14) 0.1 (0.004) DIA. NꢀM. ꢁ
1.8 (0.07) deep MIN. both ends
0.3 (0.01) MIN.
both ends
19 (0.75) DIA. MAX.
2 places
38 (1.50) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Document Number: 95248
Revision: 06-Nov-07
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Revision: 02-Oct-12
Document Number: 91000
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