VS-ST1000C14K1 [VISHAY]
Silicon Controlled Rectifier,;型号: | VS-ST1000C14K1 |
厂家: | VISHAY |
描述: | Silicon Controlled Rectifier, |
文件: | 总8页 (文件大小:195K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1473 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
A-24 (K-PUK)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
A-24 (K-PUK)
Single SCR
1473 A
1200 V, 1600 V, 1800 V, 2000 V,
2200 V, 2400 V, 2600 V
VDRM/VRRM
VTM
IGT
TJ
1.80 V
100 mA
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
1473
55
A
°C
A
IT(AV)
Ths
2913
IT(RMS)
ITSM
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
20.0
A
21.2
2000
I2t
kA2s
1865
I2√t
20 000
1200 to 2600
300
kA2√s
V
VDRM/VRRM
Range
Typical
Range
tq
μs
TJ
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRSM, MAXIMUM
VRRM, MAXIMUM REPETITIVE PEAK
I
RRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
NON-REPETITIVE PEAK REVERSE
TYPE NUMBER
REVERSE VOLTAGE
V
VOLTAGE
V
12
16
18
20
22
24
26
1200
1600
1800
2000
2200
2400
2600
1300
1700
1900
2100
2300
2500
2700
VS-ST1000C..K
100
Revision: 16-Dec-13
Document Number: 93714
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1000C..K Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
1473 (630)
55 (85)
6540
UNITS
A
°C
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
20.0
No voltage
reapplied
21.2
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
kA
17.0
100 % VRRM
reapplied
18.1
Sinusoidal half wave,
initial TJ = TJ maximum
2000
No voltage
reapplied
1865
Maximum I2t for fusing
I2t
kA2s
1445
100 % VRRM
reapplied
1360
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
20 000
0.950
1.024
0.283
0.265
1.80
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
V
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
V
rt2
VTM
IH
Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 μs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
A/μs
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
td
tq
1.9
μs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
Typical turn-off time
300
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM
IDRM
,
TJ = TJ maximum, rated VDRM/VRRM applied
100
mA
Revision: 16-Dec-13
Document Number: 93714
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
16
3
W
A
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
TJ = TJ maximum, f = 50 Hz, d% = 50
3.0
20
5.0
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
TJ = -40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
1.4
1.1
0.9
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.042
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
0.021
K/W
0.006
Maximum thermal resistance,
case to heatsink
RthC-hs
0.003
24 500
(2500)
N
(kg)
Mounting force, 10 %
Approximate weight
Case style
425
g
See dimensions - link at the end of datasheet
A-24 (K-PUK)
ΔRthJC CONDUCTION
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
180°
120°
90°
0.003
0.004
0.005
0.007
0.012
0.003
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 16-Dec-13
Document Number: 93714
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1000C..K Series
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Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST1000C..K Series
(Double Side Cooled)
ST1000C..K Series
R
(DC) = 0.021 K/W
thJ-hs
R
(DC) = 0.042 K/W
thJ-hs
Conduction Period
Conduction Angle
80
30˚
60˚
70
90˚
30°
60°
120˚
90°
60
180˚
120°
80
50
DC
180°
40
70
0
400 800 1200 1600 2000 2400
Average On-state Current (A)
0
100 200 300 400 500 600 700
AverageOn-stateCurrent(A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
3000
2500
2000
1500
1000
500
130
120
110
100
90
ST1000C..K Series
(Single Side Cooled)
thJ-hs
180˚
120˚
90˚
R
(DC) = 0.042 K/W
60˚
RMS Limit
30˚
Conduction Period
30°
Conduction Angle
ST1000C..K Series
60°
90°
120°
80
T = 125˚C
J
180°
D C
1000
0
70
0
400
800
1200
1600
0
200
400
600 800
Average On-state Current (A)
AverageOn-stateCurrent(A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
4000
130
120
110
100
90
DC
180˚
120˚
90˚
60˚
30˚
ST1000C..K Series
(Double Side Cooled)
3500
3000
2500
2000
1500
1000
500
R
(DC) = 0.021 K/W
thJ-hs
Conduction Angle
RMS Limit
30˚
80
60˚
90˚
Conduction Period
70
120˚
180˚
60
ST1000C..K Series
T
= 125˚C
50
J
0
40
0
500 1000 1500 2000 2500
Average On-state Current (A)
0
400
800
1200
1600
AverageOn-stateCurrent(A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 16-Dec-13
Document Number: 93714
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
18000
16000
14000
12000
10000
8000
22000
20000
18000
16000
14000
12000
10000
8000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125˚C
J
Initial T = 125˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
ST1000C..K Series
ST1000C..K Series
6000
6000
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T = 25˚C
J
T = 125˚C
J
1000
ST1000C..K Series
100
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
2
2.5
3
3.5
4
0.1
0.01
Steady State Value
= 0.42 K/W
R
thJ-hs
(Single Side Cooled)
= 0.21 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST1000C..K Series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 16-Dec-13
Document Number: 93714
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(a)
10
1
(b)
(2) (3)
(1)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST100C..K Series
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
0
C
26
K
1
-
1
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
-
-
-
-
Vishay Semiconductors product
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
K = PUK case A-24 (K-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
9
-
Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95081
Revision: 16-Dec-13
Document Number: 93714
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
A-24 (K-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum
1 (0.04) MIN.
2 places
47.5 (1.87) DIA. MAX.
2 places
Pin receptable
AMP. 60598-1
27.5 (1.08) MAX.
67 (2.6) DIA. MAX.
20° 5°
4.75 (0.2) NOM.
44 (1.73)
2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95081
Revision: 02-Aug-07
For technical questions, contact: indmodules@vishay.com
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1
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Revision: 02-Oct-12
Document Number: 91000
1
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