VS-ST330C16L3 [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-ST330C16L3 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总8页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST330CL Series
Vishay Semiconductors
www.vishay.com
Phase Control Thyristors
(Hockey PUK Version), 650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
TO-200AC (B-PUK)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
TO-200AC (B-PUK)
Single SCR
650 A
400 V, 800 V, 1200 V, 1400 V,
1600 V, 1800 V, 2000 V
VDRM/VRRM
VTM
IGT
TJ
1.90 V
100 mA
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
650
UNITS
A
°C
A
IT(AV)
Ths
Ths
55
1230
IT(RMS)
ITSM
I2t
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
9000
A
9420
405
kA2s
370
V
DRM/VRRM
400 to 2000
100
V
tq
Typical
μs
°C
TJ
-40 to 125
Revision: 18-Dec-13
Document Number: 94408
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330CL Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
V
RSM, MAXIMUM
I
DRM/IRRMMAXIMUM
VOLTAGE
CODE
TYPE NUMBER
NON-REPETITIVE PEAK VOLTAGE
V
AT TJ = TJ
MAXIMUM mA
04
08
12
14
16
18
20
400
800
500
900
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
VS-ST330C..L
50
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
650 (314)
55 (75)
1230
9000
9420
7570
7920
405
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
370
Maximum I2t for fusing
I2t
kA2s
287
100 % VRRM
reapplied
262
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
4050
0.91
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
0.93
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
0.57
mΩ
V
rt2
0.57
VTM
IH
Ipk = 1730 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.90
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 μs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
A/μs
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
td
tq
1.0
μs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
Typical turn-off time
100
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM
,
50
mA
IDRM
Revision: 18-Dec-13
Document Number: 94408
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330CL Series
Vishay Semiconductors
www.vishay.com
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum, tp ≤ 5 ms
Typ. Max.
Maximum peak gate power
PGM
PG(AV)
IGM
10.0
W
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
3.0
20
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
TJ = TJ maximum, tp ≤ 5 ms
A
V
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
5.0
TJ = -40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate
trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
2.5
1.8
1.1
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.11
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.06
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.005
9800
(1000)
N
(kg)
Approximate weight
Case style
250
g
See dimensions - link at the end of datasheet
TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 18-Dec-13
Document Number: 94408
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330CL Series
Vishay Semiconductors
www.vishay.com
130
120
110
100
90
130
120
110
100
90
ST330C . . L Se r ie s
ST330C..LSeries
(Single Side Cooled)
thJ-hs
(Double Side Cooled)
R
(DC) = 0.05 K/W
R
(DC) = 0.11 K/ W
thJ-hs
Conduction Angle
Conduction Period
80
80
70
70
30°
30°
60
60°
60°
60
90°
50
120°
90°
50
180°
120°
40
180°
40
30
DC
30
20
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
1600
ST330C..L Series
180°
120°
90°
120
110
100
90
(Single Side Cooled)
1400
1200
1000
800
600
400
200
0
R
(DC) = 0.11 K/W
thJ-hs
60°
30°
RM S Lim it
Conduction Period
80
70
60
Conduction Angle
ST330C . . L Se rie s
50
30°
60°
40
90°
120°
T = 125°C
J
30
180°
DC
600
20
0
200
400
800
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
2200
DC
ST330C..LSeries
120
110
100
90
2000
180°
(Double Side Cooled)
R
(DC) = 0.05 K/W
120°
90°
60°
30°
1800
1600
1400
1200
1000
800
600
400
200
0
thJ-hs
Conduction Angle
RM S Lim it
80
70
Conduction Period
ST330C .. L Se r ie s
60
30°
60°
50
90°
120°
180°
40
T = 125°C
J
30
20
0
200
400
600
800
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 18-Dec-13
Document Number: 94408
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330CL Series
Vishay Semiconductors
www.vishay.com
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
ST330C . . L Se r ie s
ST330C..L Series
1
10
100
0.01
0.1
Pulse Tra in Dura t ion (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Tj = 125 °C
1000
Tj = 25 °C
ST330C..L Series
100
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
1
0.1
St e a d y St a t e V a l u e
= 0.11 K/W
R
thJ-hs
(Single Side Cooled)
= 0.05 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
ST33 0C . . L Se r i e s
1
0.001
0.01
0.1
10
Sq u a re Wa v e Pu lse D u r a t io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 18-Dec-13
Document Number: 94408
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330CL Series
Vishay Semiconductors
www.vishay.com
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Frequency Limited by PG(AV)
10 100
Device: ST330C..LSeries
0.1
0.1
0.001
0.01
1
In st a nt a ne o us Ga t e C urre nt (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
33
0
C
16
L
1
-
1
2
3
4
5
6
7
8
9
1
2
3
-
-
-
-
Vishay Semiconductors product
Thyristor
Essential part number
0 = Converter grade
4
5
6
7
8
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
L = PUK case TO-200AC (B-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
9
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
-
Critical dV/dt:
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95076
Revision: 18-Dec-13
Document Number: 94408
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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