VS-VSKH71/12 [VISHAY]
MODULE THYRISTOR 75A ADD-A-PAK;
| 型号： | VS-VSKH71/12 |
| 厂家： | 
VISHAY |
| 描述： | MODULE THYRISTOR 75A ADD-A-PAK |
| 文件： | 总9页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-VSKT71.., VS-VSKH71.., VS-VSKL71.., VS-VSKN71.. Series
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Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 75 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
ADD-A-PAK
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
• Up to 1600 V
IT(AV) or IF(AV)
75 A
Type
Modules - thyristor, standard
AAP Gen 7 (TO-240AA)
• High surge capability
• Easy mounting on heatsink
Package
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV) or IF(AV)
IO(RMS)
CHARACTERISTICS
VALUES
75
UNITS
85 °C
As AC switch
50 Hz
165
A
1300
ITSM,
IFSM
60 Hz
1360
50 Hz
8.45
I2t
kA2s
60 Hz
7.68
I2t
VRRM
TStg
TJ
84.5
kA2s
V
Range
400 to 1600
-40 to +125
-40 to +125
°C
°C
Revision: 26-Jul-2018
Document Number: 94631
1
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM, MAXIMUM
VDRM, MAXIMUM REPETITIVE
I
RRM, IDRM
VOLTAGE
TYPE NUMBER
CODE
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
AT 125 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
06
08
400
600
500
700
400
600
800
900
800
VS-VSK.71
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
180° conduction, half sine wave,
75
TC = 85 °C
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
or
IO(RMS)
165
I(RMS)
I(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1300
1360
1093
1140
8.45
7.68
5.97
5.45
No voltage
reapplied
ITSM
or
IFSM
Sinusoidal
half wave,
initial TJ = TJ maximum
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % VRRM
reapplied
No voltage
reapplied
Maximum I2t for fusing
I2t
Initial TJ = TJ maximum
kA2s
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2t for fusing
I2t (1)
84.5
kA2s
Low level (3)
0.96
1.08
3.28
2.86
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
High level (4)
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
m
High level (4)
VTM
VFM
ITM = x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.72
150
V
IFM = x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
dI/dt
A/μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
IH
IL
250
400
mA
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I2t for time tx = I2t x tx
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
16.7 % x x IAV < I < x IAV
2
)
I > x IAV
Revision: 26-Jul-2018
Document Number: 94631
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
12
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
PG(AV)
IGM
3.0
3.0
- VGM
10
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
4.0
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
TJ, TStg
-40 to +125
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
0.29
0.1
°C/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
busbar
4
3
Mounting torque 10 %
75
g
Approximate weight
Case style
2.7
oz.
JEDEC®
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.71..
0.052
0.062
0.079
0.116
0.197
0.037
0.064
0.085
0.121
0.200
°C/W
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94631
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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130
120
110
100
90
180
180°
120°
90°
RthJC (DC) = 0.29°C/W
160
140
120
100
80
60°
30°
DC
RMS limit
180°
120°
90°
60
40
80
60°
20
Per leg, Tj = 125°C
30°
70
0
0
10 20 30 40 50 60 70 80
Average on-state current (A)
0
20
Average on-state current (A)
Fig. 4 - On-State Power Loss Characteristics
40
60
80
100 120
Fig. 1 - Current Ratings Characteristics
1200
130
120
110
100
90
At any rated load condition and with
rated Vrrm applied following surge
RthJC (DC) = 0.29°C/W
1100
1000
900
800
700
600
500
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
80
Per leg
70
0
20
40
60
80
100 120
1
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
140
120
100
80
1400
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
1200
1000
800
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
60
40
600
20
Per leg
Per leg, Tj = 125°C
0
400
0
10 20 30 40 50 60 70 80
Average on-state current (A)
0.01
0.1
1
Pulse train duration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94631
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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300
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
180°
250
120°
90°
60°
30°
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
200
150
100
50
VSK.71 Series
Per module
Tj = 125°C
0
0
0
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total RMS output current (A)
Fig. 7 - On-State Power Loss Characteristics
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
180°
(sine)
180°
(rect)
2 °C/W
∼
2 x VSK.71 Series
single phase bridge connected
Tj = 125°C
0
20 40 60 80 100 120 140
20 40 60 80 100 120 140 160 180
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
800
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
120°
(rect)
3 x VSK.71 Series
three phase bridge connected
Tj = 125°C
40
Total output current (A)
Fig. 9 - On-State Power Loss Characteristics
80
120
160
200
0
20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Revision: 26-Jul-2018
Document Number: 94631
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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1000
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.5
1.0
Instantaneous on-state voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
1.5
2.0
2.5
3.0
3.5
1
Steady state value
RthJC = 0.29 °C/W
(DC operation)
0.1
Per leg
0.01
0.001
0.01
0.1
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
1
10
100
10
1
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 20ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(4) (3) (2)
(1)
VGD
IGD
I
V
S
K
.7
1
Series Fre q ue n c y Lim it e d b y PG ( A V )
0.1
0.001
0.01
0.1
1
10 100
1000
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
Revision: 26-Jul-2018
Document Number: 94631
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
71
/
16
1
2
3
4
5
1
2
3
4
5
-
Vishay Semiconductors product
Module type
-
-
-
-
Circuit configuration (see Circuit Configuration table)
Current code (75 A)
Voltage code (see Voltage Ratings table)
Note
•
To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
CONFIGURATION CODE
(1)
~
1
VSKT
+
2
(2)
Two SCRs doubler circuit
T
H
L
3
4
5
7
6
-
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
(1)
~
1
VSKH
VSKL
VSKN
+
2
3
(2)
SCR/diode doubler circuit, positive control
4
5
-
(3)
G1 K1
(4) (5)
(1)
~
1
+
2
(2)
SCR/diode doubler circuit, negative control
3
6
7
-
(3)
K2 G2
(7) (6)
(1)
-
1
+
2
(2)
SCR/diode common anodes
N
3
4
5
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
7
Dimensions
Revision: 26-Jul-2018
www.vishay.com/doc?95368
Document Number: 94631
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
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1
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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