VS-VSKN26/12 概述
Silicon Controlled Rectifier 可控硅整流器
VS-VSKN26/12 规格参数
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | Factory Lead Time: | 18 weeks |
风险等级: | 5.75 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
VS-VSKN26/12 数据手册
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PDF下载VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
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Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
• Up to 1600 V
IT(AV) or IF(AV)
27 A
• High surge capability
• Easy mounting on heatsink
Type
Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
27
UNITS
IT(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
50 Hz
60
A
400
ITSM,
IFSM
60 Hz
420
50 Hz
800
I2t
kA2s
60 Hz
730
I2t
VRRM
TStg
TJ
8000
kA2s
V
Range
400 to 1600
-40 to 125
-40 to 125
°C
°C
Revision: 21-Mar-14
Document Number: 94629
1
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM, MAXIMUM
VDRM, MAXIMUM REPETITIVE
I
RRM, IDRM
VOLTAGE
TYPE NUMBER
CODE
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
AT 125 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
06
08
400
600
500
700
400
600
800
900
800
VS-VSK.26
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave,
C = 85 °C
VALUES
UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
27
60
T
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
or
IO(RMS)
I(RMS)
I(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
335
350
800
730
560
510
No voltage
reapplied
ITSM
or
IFSM
Sinusoidal
half wave,
initial TJ = TJ maximum
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % VRRM
reapplied
No voltage
reapplied
Maximum I2t for fusing
I2t
Initial TJ = TJ maximum
A2s
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2t for fusing
I2t (1)
8000
A2s
Low level (3)
0.86
1.09
9.58
7.31
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
High level (4)
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
m
High level (4)
VTM
VFM
ITM = x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.65
150
V
IFM = x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
dI/dt
A/μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
IH
IL
200
400
mA
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I2t for time tx = I2t x tx
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
16.7 % x x IAV < I < x IAV
2
)
I > x IAV
Revision: 21-Mar-14
Document Number: 94629
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
10
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
PG(AV)
IGM
2.5
2.5
- VGM
10
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
4.0
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
TJ, TStg
-40 to 125
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
0.76
0.1
°C/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
busbar
4
3
Mounting torque 10 %
75
g
Approximate weight
Case style
2.7
oz.
JEDEC®
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.26..
0.212
0.258
0.330
0.466
0.72
0.166
0.276
0.357
0.482
0.726
°C/W
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 21-Mar-14
Document Number: 94629
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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130
120
110
100
90
60
RthJC (DC) = 0.76°C/W
180°
120°
90°
50
40
30
20
10
0
60°
30°
DC
RMS limit
180°
120°
90°
60°
30°
Per leg, Tj = 125°C
80
0
10
Average on-state current (A)
Fig. 4 - On-State Power Loss Characteristics
20
30
40
50
0
5
10
15
20
25
30
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
400
At any rated load condition and with
rated Vrrm applied following surge
RthJC (DC) = 0.76 °C/W
Initial Tj = Tj max
350
300
250
200
150
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
Per leg
80
1
10
100
0
10
20
30
40
50
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
50
40
30
20
10
0
400
180°
120°
90°
Maximum Non-repetitive Surge
Current. Control
of conduction may not be maintained.
Versus Pulse Train Duration
Initial Tj = 125°C
350
300
250
200
150
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
Per leg
Per leg, Tj = 125°C
0.01
0.1
1
0
5
10
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
15
20
25
30
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 21-Mar-14
Document Number: 94629
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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100
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
4 °C/W
8 °C/W
90
80
70
60
50
40
30
20
10
0
180°
120°
90°
60°
30°
VSK.26 Series
Per module
Tj = 125°C
0
0
0
10
20
30
40
50
60
0
20 40 60 80 100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
250
200
150
100
50
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
180°
(sine)
180°
(rect)
8 °C/W
∼
2 x VSK.26 Series
single phase bridge connected
Tj = 125°C
0
0
60
20 40 60 80 100 120 140
10
20
30
40
50
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
300
250
200
150
100
50
RthSA = 0.1 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
120°
(rect)
1.5 °C/W
3 °C/W
3 x VSK.26 Series
three phase bridge connected
Tj = 125°C
0
0
80
20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
20
40
60
Total output current (A)
Revision: 21-Mar-14
Document Number: 94629
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1000
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.0
1.0
Instantaneous on-state voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
2.0
3.0
4.0
5.0
6.0
10
1
Steady state value
RthJC = 0.76 °C/W
(DC operation)
0.1
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
Rectangulargate pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 20V, 65ohms
tr = 1 µs, tp >= 6 µs
10
1
(a)
(b)
(3) (2) (1)
(4)
VGD
IGD
0.01
VSK.
I. Series
Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.1
1
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
Revision: 21-Mar-14
Document Number: 94629
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
26
/
16
1
2
3
4
5
1
2
3
4
5
-
Vishay Semiconductors product
Module type
-
-
-
-
Circuit configuration (see Circuit Configuration table)
Current code (26 A)
Voltage code (see Voltage Ratings table)
Note
•
To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
(1)
~
1
+
(2)
2
VSKT
Two SCRs doubler circuit
T
3
6
4
5 7
-
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
(1)
~
1
+
2
3
SCR/diode doubler circuit,
positive control
(2)
VSKH
H
4
5
-
(3)
G1 K1
(4) (5)
(1)
~
1
+
2
SCR/diode doubler circuit,
negative control
(2)
L
VSKL
3
6
7
-
(3)
K2 G2
(7) (6)
(1)
-
1
+
2
VSKN
(2)
SCR/diode common anodes
N
3
4
5
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 21-Mar-14
www.vishay.com/doc?95368
Document Number: 94629
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
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1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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