VSMY5890X01 [VISHAY]
Infrared LED,;
| 型号： | VSMY5890X01 |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, 光电 |
| 文件： | 总6页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSMY5890X01
Vishay Semiconductors
www.vishay.com
High Speed Infrared Emitting Diodes, 890 nm,
Surface Emitter Technology
FEATURES
• Package type: surface-mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.8
• Peak wavelength: λp = 890 nm
• AEC-Q101 qualified
• High speed
• Angle of half intensity: ϕ = 60°
• 0805 standard surface-mountable package
• Floor life: 168 h, MSL 3, according to
J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
APPLICATIONS
• Miniature light barrier
• Automotive sensors
• Optical switch
As part of the SurfLightTM portfolio, the VSMY5890X01 is an
infrared, 890 nm emitting diode based on GaAlAs surface
emitter chip technology with high radiant intensity, high
optical power and high speed, in a low profile 0805 surface
mount (SMD) package.
• IR point source
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr) at IF = 100 mA
ϕ (°)
λp (nm)
890
tr (ns)
VSMY5890X01
13
60
7
Note
•
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
VSMY5890X01
0805
Note
•
MOQ: minimum order quantity
Rev. 1.0, 11-Apr-2019
Document Number: 84952
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY5890X01
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
Forward current
IF
100
mA
mA
mA
mW
°C
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.1, tp = 100 μs
tp = 100 μs
IFM
200
IFSM
PV
500
210
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
Tj
125
Tamb
Tstg
Tsd
-40 to +110
-40 to +110
260
°C
°C
According to Fig. 7, J-STD-020
EIA / JESD51
°C
RthJA
280
K/W
Axis Title
Axis Title
220
10000
1000
100
110
100
90
80
70
60
50
40
30
20
10
0
10000
200
RthJA = 280 K/W
180
RthJA = 280 K/W
160
140
120
100
80
1000
100
10
60
40
20
0
10
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
SYMBOL
MIN.
TYP.
1.8
MAX.
2.1
-
UNIT
V
Forward voltage
VF
TKVF
IR
-
-
Temperature coefficient of VF
Reverse current
-1.6
mV/K
μA
Not designed for reverse operation
V
R = 0 V, f = 1 MHz,
Junction capacitance
CJ
Ie
-
10
-
30
13
-
18
-
pF
E = 0 mW/cm2
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
mW/sr
%/K
Temperature coefficient of radiant
power
TKφe
-0.2
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
ϕ
λp
-
-
-
-
-
-
60
890
40
-
-
-
-
-
-
°
nm
nm
nm/K
ns
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA, 10 % to 90 %
IF = 100 mA, 10 % to 90 %
Δλ
TKλp
tr
0.25
8
Fall time
tf
8
ns
Rev. 1.0, 11-Apr-2019
Document Number: 84952
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY5890X01
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
Axis Title
10000
1000
100
10
10000
1000
100
100
90
80
70
60
50
40
30
20
10
0
tp = 100 μs
IF = 100 mA
1000
100
1
10
10
1000
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VF - Forward Voltage (V)
750
800
850
900
950
λ - Wavelength (nm)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Radiant Power vs. Wavelength
Axis Title
Axis Title
0°
10°
20°
10
1
10000
1000
100
10000
30°
tp = 100 μs
1000
40°
1.0
0.9
50°
0.8
0.7
0.1
0.01
100
60°
70°
80°
10
10
1
10
100
0.4
0.2
0
0.6
IF - Forward Current (mA)
1st line
Fig. 4 - Relative Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
REFLOW SOLDER PROFILE
DRYPACK
Axis Title
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
250
200
150
100
50
10000
1000
100
Max. 260 °C
245 °C
255 °C
240 °C
FLOOR LIFE
217 °C
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Max. 30 s
Max. 120 s
Max. 100 s
Max. ramp down 6 °C/s
Max. ramp up 3 °C/s
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-033D or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
10
0
50
100
150
Time (s)
200
250
300
19841
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
Rev. 1.0, 11-Apr-2019
Document Number: 84952
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY5890X01
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters
Optical axis
1.25
0.8
0.6
Technical drawings
according to DIN
specification.
Not indicated tolerances 0.1
Recommended footprint
Anode
Cathode
0.9
Drawing- No.: 6.550-5352.01-4
Issue: 1; 20.12.2016
Rev. 1.0, 11-Apr-2019
Document Number: 84952
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY5890X01
Vishay Semiconductors
www.vishay.com
BLISTER TAPE DIMENSIONS in millimeters
4
0.2 0.05
Ø 1.55 0.05
2
0.05
Anode
0.94
Cathode
Ø 1.1 +0.1
4
1.45
Reel off direction
Not indicated tolerances 0.1
Technical drawings
according to DIN
specification.
Drawing-No.: 9.700-5352.02-4
Issue: 1; 20.12.2016
REEL DIMENSIONS in millimeters
8.4 +2.5
8.4 +0.15
Z
14.4 max.
Form of the leave open of the wheel is supplier specific.
Z 2:1
Technical drawings
according to DIN
specification.
Drawing-No.: 9.800-5096.01-4
Issue: 5; 20.12.2016
Rev. 1.0, 11-Apr-2019
Document Number: 84952
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2019
Document Number: 91000
1
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